US5580824A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabrication of interconnections in semiconductor devices
Assignee: United Microelectronics Corp
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Filing: 1995-06-30
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Granted: 1996-12-03
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Expires: 2015-06-30
Abstract
Abstract An interconnection pattern of a Cr film is defined by a wet-etching process by using fluoric acid and then a Cu film is grown over the surface of the Cr film. It is therefore not necessary to use a chloride gas when defining an interconnection pattern of a Cr film and when forming a Cu film. As a consequence, CuCl 2 , which is a chloride, will not remain after the fabrication of an interconnection and corrosion of Cu and Cr films owing to the attachment of hydrochloric acid resulting from the reaction between a chloride and water. The present invention therefore can provide highly reliable and dependable interconnection structures for semiconductor devices and a method for fabrication thereof. The growth of Al on Cr is also shown.
Inventors
- 👤 Kimiaki Tanaka
- 👤 Kouhei Eguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:26
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
80 words
A method of fabricating an interconnection for a semiconductor device comprising: (a) forming a chromium film over an insulating film; (b) coating a photoresist over said chromium film; (c) defining an interconnection pattern of said photoresist in accordance with a desired interconnection pattern; (d) using fluoric acid to wet-etch said chromium film after defining said interconnection pattern; (e) removing said photoresist; and (f) selectively depositing copper, by chemical vapor deposition, over upper and side surfaces of said etched chromium film.
Claim 2
Independent Claim
80 words
A method of fabricating an interconnection for a semiconductor device comprising: (a) forming a chromium film over an insulating film; (b) coating a photoresist over said chromium film; (c) defining an interconnection pattern of said photoresist in accordance with a desired interconnection pattern; (d) using fluoric acid to wet-etch said chromium film after defining said interconnection pattern; (e) removing said photoresist; and (f) selectively depositing copper, by chemical vapor deposition, over upper and side surfaces of said etched chromium film.
Claim 3
Independent Claim
75 words
A method of fabricating an interconnection for a semiconductor device comprising: (a) forming a chromium film over an insulating film; (b) coating a photoresist over said chromium film; (c) defining an interconnection pattern of said photoresist in accordance with a desired interconnection pattern; (d) using fluoric acid to wet-etch said chromium film; (e) removing said photoresist; and (f) selectively depositing aluminum, by chemical vapor deposition, over upper and side surfaces of said etched chromium film.
Claim 4
Independent Claim
75 words
A method of fabricating an interconnection for a semiconductor device comprising: (a) forming a chromium film over an insulating film; (b) coating a photoresist over said chromium film; (c) defining an interconnection pattern of said photoresist in accordance with a desired interconnection pattern; (d) using fluoric acid to wet-etch said chromium film; (e) removing said photoresist; and (f) selectively depositing aluminum, by chemical vapor deposition, over upper and side surfaces of said etched chromium film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-03 | 2000-06-03 | 2000-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-03 | 2004-06-03 | 2004-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-03 | 2008-06-03 | 2008-12-03 | $7700.00 | Window Closed / Lapsed |