US4843453A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal contacts and interconnections for VLSI devices
Assignee: Texas Instruments Inc
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Filing: 1987-08-13
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Granted: 1989-06-27
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Expires: 2007-08-13
Abstract
Abstract Metal contacts and interconnections for integrated circuits utilize copper as the primary conductor, with the copper being totally encased in refractory metal layers on both top and bottom surfaces and also sidewalls. The contact hole in silicon oxide may be filled with a plug of refractory metal before the copper is deposited, or the first refractory metal layer may be conformally deposited to coat the sidewalls of the hole.
Inventors
- 👤 Robert C. Hooper
- 👤 Bobby A. Roane
- 👤 Douglas P. Verret
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/01; H10W20/031; H10W20/064; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/981; H10W72/983; H10W74/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
90 words
A semiconductor device comprising: a selected contact region on a face of a semiconductor body, an insulator coating on said face having a contact hole over said region, said contact hole having substantially vertical sidewalls, a first coating of conformally deposited refractory metal at least on said sidewalls, a metal strip composed of copper extending along said face over said insulator and also extending into said contact hole over said first coating, and a second coating of conformally deposited refractory metal covering the top and sidewalls of said metal strip.
Claim 2
Dependent Claim
90 words
A semiconductor device comprising: a selected contact region on a face of a semiconductor body, an insulator coating on said face having a contact hole over said region, said contact hole having substantially vertical sidewalls, a first coating of conformally deposited refractory metal at least on said sidewalls, a metal strip composed of copper extending along said face over said insulator and also extending into said contact hole over said first coating, and a second coating of conformally deposited refractory metal covering the top and sidewalls of said metal strip.
Claim 3
Dependent Claim
39 words
A device according to claim 1 wherein said semiconductor is silicon, said insulator coating is silicon dioxide, said first coating is molybdenum, and said metal of said first coating is interposed between said metal strip and said silicon dioxide.
Claim 4
Dependent Claim
22 words
A device according to claim 1 wherein a barrier layer is interposed between said first coating and said region in said face.
Claim 5
Dependent Claim
15 words
A device according to claim 3 wherein said barrier layer is a refractoy metal silicide.
Claim 6
Dependent Claim
34 words
A device according to claim 1 wherein said first coating extends along said face between said metal strip and said insulator, whereby the metal strip is totally encased in said first and second coatings.
Claim 7
Dependent Claim
100 words
A semiconductor device comprising: a selected contact region in a face of a semiconductor body; an insulator coating on said face having a contact hole over said region, said contact hole having substantially vertical sidewalls; a plug of conductive material substantially filling said contact hole; a first coating of conformally deposited refractory metal at least contacting and covering said plug; a metal strip composed of copper extending along said face over said insulator and also extending over and contacting said first coating; and a second coating of conformally deposited refractory metal covering the top and sidewalls of said metal strip.
Claim 8
Dependent Claim
100 words
A semiconductor device comprising: a selected contact region in a face of a semiconductor body; an insulator coating on said face having a contact hole over said region, said contact hole having substantially vertical sidewalls; a plug of conductive material substantially filling said contact hole; a first coating of conformally deposited refractory metal at least contacting and covering said plug; a metal strip composed of copper extending along said face over said insulator and also extending over and contacting said first coating; and a second coating of conformally deposited refractory metal covering the top and sidewalls of said metal strip.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-26 | 1992-12-26 | 1993-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-26 | 1996-12-26 | 1997-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-26 | 2000-12-26 | 2001-06-27 | $7700.00 | Window Closed / Lapsed |