Method of causing adherence of glass to gold

Abstract

Abstract IN LARGE SCALE INTEGRATED (LSI) TECHNOLOGY, VERY COMPLEX CIRCUITS ARE MANUFACTURED WHICH REQUIRE AT LEAST TWO LAYER METALLIZATION PATTERNS AND OFTEN REQUIRE THREE LAYERS OF METALLIZATION PATTERNS IN MAKING ALL THE INTERCONNECTIONS AMONG THE TRANSISTORS, DIODES, RESISTORS, ECT. DDEVICCES EMPLOYED. ADJACENT METALLIZATION LAYERS ARE SEPARATED BY SILICON DIOXIDE, SIO2, PHOSSIL GLASS P-SIO2 AND OTHER DIELECTRIC MATERIALS. THROUGH CONNECTIONS BETWEEN LAYERS ARE MADE BY OPENING APERTURES IN THE INTERVENING DIELECTRIIC MATERIAL AND FORMING THE NEXT LAYER OF METAL OVER THE DIELECTRIC LAYER, WHICH METAL LAYER INCLUDES A MEMBER EXTENDING THROUGH THE APERTURE AND IINTO CONTACT WITH EITHER AN UNDERLYING LAYER OF METAL OR THE ABOVE MENTIONED DEVICES THEMSELVES.. THEN GOLD IS SELECTED AS THE METALLIZATION, AN ADDITIONAL INTERMEDIATE LAYER IS NOW REQUIRED FOR INTERFACING WITH THE DIELECTRIC MATERIAL SINCE DIELECTRIC MATERIALS HAVE NOT HERETOFORE AADHERED DIRECTLY TO GOLD. THE PRESENT INVENTION IS DIRECTED TOWARD ELIMINATING THE NEED FOR THIS INTERMEDIIATE LAYER AND HAVING THE DIELECTRIC MATERIAL TO ADHERE DIRECTTLY TO THE GOLD.

Inventors

• 👤 J Osborne
• 👤 H Pille

Bibliographic Details