US5869363A
Expired / Lapsed
US
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Method of manufacturing semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1996-12-16
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Granted: 1999-02-09
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Expires: 2016-12-16
Abstract
Abstract In a method of manufacturing a semiconductor device, a first heat treatment for crystallization is conducted after nickel elements are introduced in an amorphous silicon film. Then, after the crystalline silicon film is obtained, a heat treatment is again conducted through the heating method which is identical with the first heat treatment. In this state, HCl or the like is added to the atmosphere to conduct gettering of the nickel elements remaining in the crystalline silicon film. With this process, there can be obtained a crystalline silicon film low in the concentration of the metal elements and high in crystallinity.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Satoshi Teramoto
- 👤 Jun Koyama
- 👤 Akiharu Miyanaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:19
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806; H10P36/00; H10P36/03
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
88 words
A method of forming a semiconductor film comprising the steps of: introducing a metal element that promotes crystallization of an amorphous semiconductor film thereinto; conducting a first heat treatment to crystallize said amorphous semiconductor film; conducting a second heat treatment at a higher temperature than said first heat treatment, and in an atmosphere comprising a halogen element and at least a material selected from the group consisting of Ar, N 2 , He and Ne, wherein said second heat treatment is conducted at a temperature of 450°-1050° C.
Claim 2
Independent Claim
88 words
A method of forming a semiconductor film comprising the steps of: introducing a metal element that promotes crystallization of an amorphous semiconductor film thereinto; conducting a first heat treatment to crystallize said amorphous semiconductor film; conducting a second heat treatment at a higher temperature than said first heat treatment, and in an atmosphere comprising a halogen element and at least a material selected from the group consisting of Ar, N 2 , He and Ne, wherein said second heat treatment is conducted at a temperature of 450°-1050° C.
Claim 3
Dependent Claim
33 words
A method according to claim 1 wherein said halogen element comprises at least a material selected from the group consisting of HCl, HF, HBr, Cl 2 , F 2 and Br 2 .
Claim 4
Dependent Claim
37 words
A method according to claim 1 wherein said second heat treatment is effective to change said semiconductor film to include said metal element at 3×10 17 cm -3 or less as a minimum value measured through SIMS.
Claim 5
Independent Claim
105 words
A method of forming a semiconductor film which is a single crystal or a substantially single crystal on an insulating surface, said method comprising the steps of: introducing a metal element that promotes crystallization of an amorphous semiconductor film thereinto; crystallizing said semiconductor film; gettering said metal element from said semiconductor film in an atmosphere comprising a halogen element and at a higher temperature than said crystallizing step, wherein said semiconductor film comprises hydrogen at 5 atoms % or less to 1×10 15 cm -3 , wherein said metal element is gettered at a temperature of 450°-1050° C., and wherein said gettering step is conducted.
Claim 6
Independent Claim
105 words
A method of forming a semiconductor film which is a single crystal or a substantially single crystal on an insulating surface, said method comprising the steps of: introducing a metal element that promotes crystallization of an amorphous semiconductor film thereinto; crystallizing said semiconductor film; gettering said metal element from said semiconductor film in an atmosphere comprising a halogen element and at a higher temperature than said crystallizing step, wherein said semiconductor film comprises hydrogen at 5 atoms % or less to 1×10 15 cm -3 , wherein said metal element is gettered at a temperature of 450°-1050° C., and wherein said gettering step is conducted.
Claim 7
Dependent Claim
16 words
A method according to claim 4 wherein said atmosphere contains said halogen element and a non-oxide.
Claim 8
Dependent Claim
19 words
A method according to claim 4 further comprising irradiating a laser light to said semiconductor film after said gettering.
Claim 9
Dependent Claim
31 words
A method according to claim 4 wherein said gettering is done to render said semiconductor film to contain said metal element 3×10 17 cm -3 or less as measured through SIMS.
Claim 10
Dependent Claim
33 words
A method according to claim 4 wherein said atmosphere further comprises at least a material selected from the group consisting of HCl, HF, HBr, Cl 2 , F 2 and Br 2 .
Claim 11
Independent Claim
129 words
A method of forming a semiconductor film, said method comprising the steps of: introducing a metal element that promotes crystallization of an amorphous semiconductor film thereinto to crystallize said amorphous semiconductor film through a first heat treatment; and conducting a second heat treatment at a higher temperature than said first heat treatment in an atmosphere comprising a halogen element to remove said metal element, wherein said second heat treatment is carried out to obtain a single crystal or substantially single crystal semiconductor region which has substantially no crystal grain boundary, contains said metal element at a concentration of 3×10 17 cm -3 or less, and has a spin density of 3×10 17 cm -3 or less, wherein said second heat treatment is conducted at a temperature of 450°-1050° C.
Claim 12
Independent Claim
129 words
A method of forming a semiconductor film, said method comprising the steps of: introducing a metal element that promotes crystallization of an amorphous semiconductor film thereinto to crystallize said amorphous semiconductor film through a first heat treatment; and conducting a second heat treatment at a higher temperature than said first heat treatment in an atmosphere comprising a halogen element to remove said metal element, wherein said second heat treatment is carried out to obtain a single crystal or substantially single crystal semiconductor region which has substantially no crystal grain boundary, contains said metal element at a concentration of 3×10 17 cm -3 or less, and has a spin density of 3×10 17 cm -3 or less, wherein said second heat treatment is conducted at a temperature of 450°-1050° C.
Claim 13
Dependent Claim
54 words
A method according to claim 9 wherein said atmosphere comprises at least a first material selected from the first group consisting of HCl, HF, HBr, Cl 2 , F 2 and Br 2 added to at least a second material selected from the second group consisting of Ar, N 2 , He or Ne.
Claim 14
Dependent Claim
28 words
A method according to claim 9 wherein said semiconductor film has said metal element at 3×10 17 cm -3 or less as a minimum value measured through SIMS.
Claim 15
Dependent Claim
22 words
A method according to claim 1 wherein said conducting a second heat treatment is an operation of gettering the crystallized semiconductor film.
Claim 16
Dependent Claim
17 words
A method according to claim 1 wherein said first and second treatments are conducted by same means.
Claim 17
Dependent Claim
15 words
A method according to claim 1 wherein said second treatment is conducted for 10 minutes.
Claim 18
Dependent Claim
25 words
A method according to claim 1 wherein said metal element can be reduced 1/10 or less of an initial concentration by said second heat treatment.
Claim 19
Dependent Claim
19 words
A method according to claim 4 wherein said crystallizing step and said gettering step are conducted by same means.
Claim 20
Dependent Claim
15 words
A method according to claim 4 wherein said gettering step is conducted for 10 minutes.
Claim 21
Dependent Claim
24 words
A method according to claim 4 wherein said metal element can be reduced 1/10 or less of an initial concentration by said gettering step.
Claim 22
Dependent Claim
17 words
A method according to claim 9 wherein said first and second treatments are conducted by same means.
Claim 23
Dependent Claim
15 words
A method according to claim 9 wherein said second treatment is conducted for 10 minutes.
Claim 24
Dependent Claim
25 words
A method according to claim 9 wherein said metal element can be reduced 1/10 or less of an initial concentration by said second heat treatment.
References Cited (Backward Citations)
US4231809A
Cited
US5582880A
Cited
US5563426A
Cited
US5403772A
Cited
US5604360A
Cited
JPH06232059A
Cited
JPH06232069A
Cited
US5696386A
Cited
US5639698A
Cited
US5608232A
Cited
US5580792A
Cited
US5646424A
Cited
US5426064A
Cited
US5677549A
Cited
US5624851A
Cited
US5569610A
Cited
US5569936A
Cited
US5614733A
Cited
US5595923A
Cited
US5595944A
Cited
US5589694A
Cited
US5501989A
Cited
US5481121A
Cited
US5488000A
Cited
US5663077A
Cited
US5529937A
Cited
US5492843A
Cited
US5696388A
Cited
US5614426A
Cited
US5508533A
Cited
US5637515A
Cited
US5580815A
Cited
US5534716A
Cited
US5616506A
Cited
US5643826A
Cited
US5543352A
Cited
US5612250A
Cited
US5585291A
Cited
US5654203A
Cited
US5705829A
Cited
US5550070A
Cited
US5605846A
Cited
US5656825A
Cited
US5620910A
Cited
US5712191A
Cited
US5621224A
Cited
US5606179A
Cited
US5700333A
Cited
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