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US5582880A
Expired / Lapsed
US
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Method of manufacturing non-single crystal film and non-single crystal semiconductor device
Assignee: Canon Inc
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Filing: 1993-03-24
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Granted: 1996-12-10
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Expires: 2013-03-24
Abstract
Abstract A method of manufacturing an amorphous silicon thin film exhibiting excellent quality for use in a TFT, a photosensor or a solar cell at a low cost by a plasma CVD method utilizing high frequency discharge, the method being consisting of steps of using a silicon compound such as SiH 4 as raw material gas, making the frequency f (MHz) of a high frequency power source to be 30 MHz or higher, and applying negative voltage to an electrode of a substrate if necessary. Furthermore, it is preferably that the relationship between the distance d (cm) between electrodes and the frequency f (MHz) of the high frequency power source satisfies f(HMz)/d (cm)<30 HMz/cm.
Inventors
- 👤 Chiori Mochizuki
- 👤 Hidemasa Mizutani
- 👤 Tatsumi Shoji
- 👤 Kazuaki Tashiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 05:17
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10F; H10F71/00; H10F71/10; H10F71/103; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
116 words
A method of manufacturing a non-single-crystal film containing silicon by a plasma CVD method that utilizes a high frequency discharge, said method comprising the steps of manufacturing said non-single-crystal film by the conditions of: supplying at least a gas containing Si as a raw material gas into a film forming space; while supplying said gas, applying high frequency power having a frequency f (MHz) selected from a range from 30 MHz to 120 MHz with P W defined by P W (W/cm 2 )<10 (MHz W/cm 2 )/f (MHz) between electrodes at a distance d defined by d(cm)>f (MHz)/30 MHz/cm; and discharging under film forming pressure P in the range from 0.25 Torr to 2.5 Torr.
Claim 2
Independent Claim
116 words
A method of manufacturing a non-single-crystal film containing silicon by a plasma CVD method that utilizes a high frequency discharge, said method comprising the steps of manufacturing said non-single-crystal film by the conditions of: supplying at least a gas containing Si as a raw material gas into a film forming space; while supplying said gas, applying high frequency power having a frequency f (MHz) selected from a range from 30 MHz to 120 MHz with P W defined by P W (W/cm 2 )<10 (MHz W/cm 2 )/f (MHz) between electrodes at a distance d defined by d(cm)>f (MHz)/30 MHz/cm; and discharging under film forming pressure P in the range from 0.25 Torr to 2.5 Torr.
Claim 3
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 1, wherein said non-single-crystal film is an amorphous silicon film.
Claim 4
Independent Claim
129 words
A method of manufacturing a non-single-crystal film containing silicon by a plasma CVD method that utilizes a high frequency discharge, said method comprising the steps of manufacturing said non-single crystal film by the conditions of: supplying at least a gas containing Si as a raw material gas into a film forming space; while applying said gas, applying high frequency power having a frequency f (MHz) selected from a range from 30 MHz to 120 MHZ with power P W defined by P W (W/cm 2 )<10 (MHz.Wcm 2 )/f (MHz) between electrodes at a distance d defined by d(cm)>f (MHz)/30 MHz/cm; wherein residence time τ (sec) is from 0.05 sec to 2.5 sec; and discharging under film forming pressure P in the range from 0.25 Torr to 2.5 Torr.
Claim 5
Independent Claim
129 words
A method of manufacturing a non-single-crystal film containing silicon by a plasma CVD method that utilizes a high frequency discharge, said method comprising the steps of manufacturing said non-single crystal film by the conditions of: supplying at least a gas containing Si as a raw material gas into a film forming space; while applying said gas, applying high frequency power having a frequency f (MHz) selected from a range from 30 MHz to 120 MHZ with power P W defined by P W (W/cm 2 )<10 (MHz.Wcm 2 )/f (MHz) between electrodes at a distance d defined by d(cm)>f (MHz)/30 MHz/cm; wherein residence time τ (sec) is from 0.05 sec to 2.5 sec; and discharging under film forming pressure P in the range from 0.25 Torr to 2.5 Torr.
Claim 6
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 3, wherein said non-single-crystal film is an amorphous silicon film.
Claim 7
Independent Claim
128 words
A method of manufacturing a non-single-crystal film by depositing said non-single crystal film by using gas containing Si by a plasma CVD method, said method comprising the steps of manufacturing said non-single crystal film by the conditions of: supplying at least a gas containing Si as a raw material gas into a film forming space; and while supplying said gas applying VHF waves having frequency f (MHz) selected from the range higher than 30 MHz with power P W defined by P W (W/cm 2 )>1 (MHz.W/cm 2 )/f (MHz) between electrodes at a distance d defined by d(cm)>(MHz)/30 (MHz)/30 (MHz/cm) to generate plasma; and wherein the ratio of the light intensity (H*) of a hydrogen radical and the light intensity (SiH*) of a silane radical is (H*)/(SiH*)>1.
Claim 8
Independent Claim
128 words
A method of manufacturing a non-single-crystal film by depositing said non-single crystal film by using gas containing Si by a plasma CVD method, said method comprising the steps of manufacturing said non-single crystal film by the conditions of: supplying at least a gas containing Si as a raw material gas into a film forming space; and while supplying said gas applying VHF waves having frequency f (MHz) selected from the range higher than 30 MHz with power P W defined by P W (W/cm 2 )>1 (MHz.W/cm 2 )/f (MHz) between electrodes at a distance d defined by d(cm)>(MHz)/30 (MHz)/30 (MHz/cm) to generate plasma; and wherein the ratio of the light intensity (H*) of a hydrogen radical and the light intensity (SiH*) of a silane radical is (H*)/(SiH*)>1.
Claim 9
Dependent Claim
34 words
A method of manufacturing a non-single-crystal film according to claim 5, wherein gas containing boron, gas containing phosphorus and gas containing arsenic are used as impurity gas with respect to said gas containing Si.
Claim 10
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 5, wherein said non-single-crystal film is a microcrystal silicon film.
Claim 11
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 6, wherein said non-single-crystal film is a microcrystal silicon film.
Claim 12
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 5, wherein said non-single-crystal film is a microcrystal silicon film.
Claim 13
Independent Claim
92 words
A method of manufacturing a non-single-crystal film by depositing said non-single crystal film by using gas containing Si by a plasma chemical vapor phase method, said method comprising the steps of: maintaining substrate temperature Ts at a level from 300° C. to 600° C.; and supplying VHF having frequency f of 30 MHz or higher to generate plasma wherein said VHF waves are so supplied that the substrate temperature Ts and said high frequency FMHz satisfy a relationship Ts=k (HMz) f (HMz)+a °C. where 0.1≦k(MHz) ≦2, a=300° C. to generate a plasma.
Claim 14
Independent Claim
92 words
A method of manufacturing a non-single-crystal film by depositing said non-single crystal film by using gas containing Si by a plasma chemical vapor phase method, said method comprising the steps of: maintaining substrate temperature Ts at a level from 300° C. to 600° C.; and supplying VHF having frequency f of 30 MHz or higher to generate plasma wherein said VHF waves are so supplied that the substrate temperature Ts and said high frequency FMHz satisfy a relationship Ts=k (HMz) f (HMz)+a °C. where 0.1≦k(MHz) ≦2, a=300° C. to generate a plasma.
Claim 15
Dependent Claim
33 words
A method of manufacturing a non-single-crystal film according to claim 10, wherein said VHF waves having said high frequency f are supplied by electric power of 10/f (W/cm2) (f: MHz) to generate plasma.
Claim 16
Dependent Claim
34 words
A method of manufacturing a non-single-crystal film according to claim 10, wherein the ratio of the light intensity [H*] of a hydrogen radical and the light intensity [SiH*] of a silane radical is [H*]/[SiH*]≦1.
Claim 17
Dependent Claim
23 words
A method of manufacturing a non-single-crystal film according to claim 10, wherein distance d between electrodes satisfies a relationship f (MHz)/d (cm)<30 MHz/cm.
Claim 18
Dependent Claim
36 words
A method of manufacturing a non-single-crystal film according to claim 10, wherein said non-single-crystal film is at least a film selected from a group consisting of an amorphous silicon film and an amorphous silicon nitride film.
Claim 19
Dependent Claim
35 words
A method of manufacturing a non-single-crystal according to claim 5, wherein said non-single-crystal film is at least a film selected from a group consisting of an amorphous silicon film and an amorphous silicon nitride film.
Claim 20
Dependent Claim
36 words
A method of manufacturing a non-single-crystal film according to claim 11, wherein said non-single-crystal film is at least a film selected from a group consisting of an amorphous silicon film and an amorphous silicon nitride film.
Claim 21
Dependent Claim
36 words
A method of manufacturing a non-single-crystal film according to claim 12, wherein said non-single-crystal film is at least a film selected from a group consisting of an amorphous silicon film and an amorphous silicon nitride film.
Claim 22
Dependent Claim
36 words
A method of manufacturing a non-single-crystal film according to claim 13, wherein said non-single-crystal film is at least a film selected from a group consisting of an amorphous silicon film and an amorphous silicon nitride film.
Claim 23
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 14, wherein said applied frequency is 120 MHz or lower.
Claim 24
Dependent Claim
28 words
A method of manufacturing a non-single-crystal film according to claim 14, wherein said film is formed by a film forming pressure of from 0.25 Torr to 2.5 Torr.
Claim 25
Dependent Claim
58 words
A method of manufacturing a non-single-crystal film according to claim 16, wherein, assuming that residence time τ (sec) for which raw material gas Q (sccm) is retained in discharge space V (cm 3 ) is defined as τ=78.947×10 -3 [X]×sec/(Torr×min.)×V (cm 3 )×P (Torr) /Q (sscm), said residence time τ is ranged from 0.05 sec to 2.5 sec.
Claim 26
Independent Claim
96 words
A method of manufacturing a non-single-crystal film by a plasma CVD method utilizing high frequency discharge, said method comprising the steps of: providing silicon compound gas as raw material gas; making frequency f (MHz) of a high frequency power source to be 30 MHz or higher; and applying voltage to an electrode of a substrate in such a manner that the surface of said substrate is made to be a negative potential, and wherein the relationship between distance d (cm) between electrodes and applied voltage Vb (v) to said electrode of said substrate satisfies Vb/d≧-12 (v/cm).
Claim 27
Independent Claim
96 words
A method of manufacturing a non-single-crystal film by a plasma CVD method utilizing high frequency discharge, said method comprising the steps of: providing silicon compound gas as raw material gas; making frequency f (MHz) of a high frequency power source to be 30 MHz or higher; and applying voltage to an electrode of a substrate in such a manner that the surface of said substrate is made to be a negative potential, and wherein the relationship between distance d (cm) between electrodes and applied voltage Vb (v) to said electrode of said substrate satisfies Vb/d≧-12 (v/cm).
Claim 28
Dependent Claim
33 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 22, wherein the relationship between distance d (cm) between electrodes and frequency power source satisfies [f/d<30]f(MHz)/d (cm)<30 MHz/cm.
Claim 29
Dependent Claim
26 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 22, wherein said non-single crystal film is an amorphous silicon film.
Claim 30
Dependent Claim
26 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 23, wherein said non-single crystal film is an amorphous silicon film.
Claim 31
Dependent Claim
31 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 23, wherein said frequency f of said high frequency power source is 120 MHz or lower.
Claim 32
Dependent Claim
32 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 22, wherein said frequency f of said high frequency power source is from 50 to 100 MHz.
Claim 33
Independent Claim
88 words
A method of manufacturing a non-single-crystal film for depositing an amorphous silicon nitride film by a plasma CVD method by using mixture gas of at least gas containing Si and nitrogen gas, said method comprising the step of: applying VHF waves having frequency f MHz higher than 30 MHz to meet f (MHz)/d (cm)<30 (MHz/cm assuming that the distance between electrodes is d (cm) to generate plasma, and wherein said non-single-crystal film has a compressive stress of from 1×10 9 dyn/cm 2 to 4×10 9 dyn/cm 2 .
Claim 34
Independent Claim
88 words
A method of manufacturing a non-single-crystal film for depositing an amorphous silicon nitride film by a plasma CVD method by using mixture gas of at least gas containing Si and nitrogen gas, said method comprising the step of: applying VHF waves having frequency f MHz higher than 30 MHz to meet f (MHz)/d (cm)<30 (MHz/cm assuming that the distance between electrodes is d (cm) to generate plasma, and wherein said non-single-crystal film has a compressive stress of from 1×10 9 dyn/cm 2 to 4×10 9 dyn/cm 2 .
Claim 35
Dependent Claim
28 words
A method of manufacturing a non-single-crystal film according to claim 28, wherein said mixture gas of at least gas containing Si, hydrogen gas and nitrogen gas is used.
Claim 36
Dependent Claim
28 words
A method of manufacturing a non-single-crystal film according to claim 28, wherein said mixture gas of at least gas containing Si and F and nitrogen gas is used.
Claim 37
Dependent Claim
30 words
A method of manufacturing a non-single-crystal film according to claim 28, wherein said mixture gas of at least gas containing Si and F, hydrogen gas and nitrogen gas is used.
Claim 38
Independent Claim
94 words
A method of manufacturing a non-single-crystal film for depositing amorphous silicon nitride film by a plasma CVD method by using mixture gas containing at least a silicon compound and ammonia as raw material gas, said method comprising the step of: applying VHF waves having frequency f higher than 30 MHz and lower than 120 MHz to meet f (MHZ)/d (cm)<30 MHz/cm assuming that the distance between electrodes is d (cm) to generate plasma, and wherein said non-single-crystal film has a compressive stress of from 1×10 9 dyn/cm 2 to 4×10 9 dyn/cm 2 .
Claim 39
Independent Claim
94 words
A method of manufacturing a non-single-crystal film for depositing amorphous silicon nitride film by a plasma CVD method by using mixture gas containing at least a silicon compound and ammonia as raw material gas, said method comprising the step of: applying VHF waves having frequency f higher than 30 MHz and lower than 120 MHz to meet f (MHZ)/d (cm)<30 MHz/cm assuming that the distance between electrodes is d (cm) to generate plasma, and wherein said non-single-crystal film has a compressive stress of from 1×10 9 dyn/cm 2 to 4×10 9 dyn/cm 2 .
Claim 40
Dependent Claim
30 words
A method of manufacturing a non-single-crystal film according to claim 32, wherein said method of manufacturing said non-single-crystal film is used in a stacked structure with an amorphous silicon film.
Claim 41
Dependent Claim
36 words
A method of manufacturing a non-single-crystal film according to claim 11, wherein said non-single-crystal film has the density of the defects in the film of a value from 10 14 to 10 15 /cm 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-10 | 2000-06-10 | 2000-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-10 | 2004-06-10 | 2004-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-10 | 2008-06-10 | 2008-12-10 | $7700.00 | Window Closed / Lapsed |