US5055421A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the plasma deposition of hydrogenated, amorphous carbon using predetermined retention times of gaseous hydrocarbons
Assignee: Siemens AG
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Filing: 1988-06-14
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Granted: 1991-10-08
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Expires: 2008-06-14
Abstract
Abstract The invention provides a method for making a new semiconductor base material comprising thin layers of amorphous, hydrogenous carbon (a-c:H) with a specific electrical resistance of between 10 1 and 10 8 Ω.cm and a charge carrier concentration (n+p) of between 10 10 and 10 18 cm -3 , respectively at room temperature. The new semiconductor base material can be manufactured in thin layer technology with the application of band processes and exhibits a charge carrier mobility of at least 1 cm 2 .v -1 .s -1 .
Inventors
- 👤 Siegfried Birkle
- 👤 Johann Kammermaier
- 👤 Rolf Schulte
- 👤 Albrecht Winnacker
- 👤 Gerhard Rittmayer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:42
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3406; C; C23; C23C; C23C16/00; C23C16/22; C23C16/26; H10D; H10D62/00; H10D62/40; H10D62/402; H10D62/80; H10D62/83; H10P14/24; H10P14/3451; H10P14/3452; H10P14/3454
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
97 words
A method for manufacturing a semiconductor base material with high semiconductor characteristic potential comprising the step of depositing a thin layer amorphous, hydrogenous carbon (a-C:H) onto a substrate by high-frequency plasma deposition of gaseous hydrocarbons, wherein the average retention time of the hydrocarbons in the plasma is at least 15 ms, the retention time being defined as the quotient of the product of the plasma volumes and gas pressure and of the mass flow rate, wherein the power density in the plasma is from 0.2 to 10 W·cm -3 , and wherein the substrate is not heated.
Claim 2
Independent Claim
97 words
A method for manufacturing a semiconductor base material with high semiconductor characteristic potential comprising the step of depositing a thin layer amorphous, hydrogenous carbon (a-C:H) onto a substrate by high-frequency plasma deposition of gaseous hydrocarbons, wherein the average retention time of the hydrocarbons in the plasma is at least 15 ms, the retention time being defined as the quotient of the product of the plasma volumes and gas pressure and of the mass flow rate, wherein the power density in the plasma is from 0.2 to 10 W·cm -3 , and wherein the substrate is not heated.
Claim 3
Dependent Claim
17 words
The method according to claim 1, wherein the average retention time is from 50 to 500 ms.
Claim 4
Dependent Claim
16 words
The method according to claim 1 wherein the gas pressure is from 5 to 400 Pa.
Claim 5
Dependent Claim
16 words
The method according to claim 1 wherein the gas pressure is from 5 to 400 Pa.
Claim 6
Dependent Claim
23 words
The method according to claim 1 wherein the mass flow rate is from 0.05×10 5 to 2×10 5 Pa·cm 3 s -1 .
Claim 7
Dependent Claim
17 words
The method according to claim 1 wherein the plasma deposition takes place by means of radio frequency.
Claim 8
Dependent Claim
12 words
The method according to claim 1 wherein alkanes are used as hydrocarbons.
Claim 9
Dependent Claim
16 words
The method according to claim 2 wherein the gas pressure is from 5 to 400 Pa.
Claim 10
Dependent Claim
23 words
The method according to claim 2 wherein the mass flow rate is from 0.05×10 5 to 2×10 5 Pa·cm 3 ·s -1 .
Claim 11
Dependent Claim
17 words
The method according to claim 2 wherein the plasma deposition takes place by means of radio frequency.
Claim 12
Dependent Claim
12 words
The method according to claim 2 wherein alkanes are used as hydrocarbons.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-07 | 1995-04-08 | 1995-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-07 | 1999-04-08 | 1999-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-07 | 2003-04-08 | 2003-10-08 | $7700.00 | Window Closed / Lapsed |