US6495437B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low temperature process to locally form high-k gate dielectrics
Assignee: GlobalFoundries US Inc
•
Filing: 2001-02-09
•
Granted: 2002-12-17
•
Expires: 2021-02-09
Abstract
Abstract A method of forming a dielectric gate insulator in a transistor is disclosed herein. The method includes providing a gate structure including a layer of material over a semiconductor structure, siliciding the substrate, and transforming the layer of material into a gate dielectric material. The gate dielectric material can be a high-k gate dielectric material.
Inventors
- 👤 Bin Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:41
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/01352; H10D64/017; H10D64/60; H10D64/66; H10D64/68; H10D64/691
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
80 words
A method of forming a dielectric gate insulator for a transistor, the method comprising: providing a sacrificial gate structure on a substrate, the sacrificial gate structure including a layer of metal material above the substrate and a sacrificial gate material above the metal material; forming source/drain regions; siliciding the source/drain regions; a removing the sacrificial gate material; and transforming the metal material into a high-k gate dielectric material for the dielectric gate insulator, wherein the sacrificial gate material includes nitride.
Claim 2
Independent Claim
80 words
A method of forming a dielectric gate insulator for a transistor, the method comprising: providing a sacrificial gate structure on a substrate, the sacrificial gate structure including a layer of metal material above the substrate and a sacrificial gate material above the metal material; forming source/drain regions; siliciding the source/drain regions; a removing the sacrificial gate material; and transforming the metal material into a high-k gate dielectric material for the dielectric gate insulator, wherein the sacrificial gate material includes nitride.
Claim 3
Dependent Claim
15 words
The method of claim 1 , wherein the transforming includes oxidation of the metal material.
Claim 4
Dependent Claim
31 words
The method of claim 1 , further comprising covering the source/drain regions with an insulative layer and polishing the insulative layer to expose the sacrificial gate material after the siliciding step.
Claim 5
Independent Claim
98 words
A method of forming a dielectric gate insulator for a transistor, the method comprising: providing a sacrificial gate structure on a substrate, the sacrificial gate structure including a layer of metal material above the substrate and a sacrificial gate material above the metal material; forming source/drain regions; siliciding the source/drain regions; removing the sacrificial gate material; and transforming the metal material into a high-k gate dielectric material for the dielectric gate insulator, wherein the layer of metal material comprises aluminum, wherein the transforming step thermally oxidizes the aluminum and provides aluminum oxidation at a temperature between 250-300° C.
Claim 6
Independent Claim
98 words
A method of forming a dielectric gate insulator for a transistor, the method comprising: providing a sacrificial gate structure on a substrate, the sacrificial gate structure including a layer of metal material above the substrate and a sacrificial gate material above the metal material; forming source/drain regions; siliciding the source/drain regions; removing the sacrificial gate material; and transforming the metal material into a high-k gate dielectric material for the dielectric gate insulator, wherein the layer of metal material comprises aluminum, wherein the transforming step thermally oxidizes the aluminum and provides aluminum oxidation at a temperature between 250-300° C.
Claim 7
Dependent Claim
24 words
The method of claim 1 , wherein the transforming step thermally oxidizes the aluminum and provides aluminum oxidation at a temperature between 250-300° C.
Claim 8
Dependent Claim
13 words
The method of claim 4 , wherein the sacrificial gate material includes nitride.
Claim 9
Dependent Claim
26 words
The method of claim 6 , wherein said gate dielectric insulator is formed by thermal oxidation and without directly sputtering or depositing as a gate insulator.
Claim 10
Dependent Claim
24 words
The method of claim 1 , wherein the transforming step is by thermal oxidation and without directly sputtering or depositing as a gate insulator.
Claim 11
Independent Claim
56 words
A method of manufacturing an integrated circuit, comprising: providing a gate structure including a metal layer and a sacrificial layer; providing a silicide layer next to at least one side of the gate structure; removing the sacrificial layer; and forming a dielectric gate insulator from the metal layer, the sacrificial layer being a silicon nitride layer.
Claim 12
Independent Claim
56 words
A method of manufacturing an integrated circuit, comprising: providing a gate structure including a metal layer and a sacrificial layer; providing a silicide layer next to at least one side of the gate structure; removing the sacrificial layer; and forming a dielectric gate insulator from the metal layer, the sacrificial layer being a silicon nitride layer.
Claim 13
Dependent Claim
17 words
The method of claim 9 , further comprising: forming a gate conductor over the dielectric gate insulator.
Claim 14
Dependent Claim
23 words
The method of claim 9 , wherein the forming the dielectric gate insulator step results in a material having a high dielectric constant.
Claim 15
Dependent Claim
22 words
The method of claim 9 , wherein the dielectric gate insulator is formed without directly sputtering or depositing the dielectric gate insulator.
Claim 16
Dependent Claim
14 words
The method of claim 9 , wherein the dielectric gate insulator includes titanium oxide.
Claim 17
Dependent Claim
14 words
The method of claim 9 , wherein the dielectric gate insulator is tantalum pentaoxide.
Claim 18
Dependent Claim
23 words
The method of claim 9 , wherein the forming the dielectric gate insulator step provides a uniform thickness for the dielectric gate insulator.
Claim 19
Dependent Claim
28 words
The method of claim 9 , wherein the metal layer is aluminum, tantalum, or titanium, and the high-k gate dielectric is an oxidized form of the metal layer.
Claim 20
Dependent Claim
20 words
The method of claim 9 , wherein the forming step is by thermal oxidation at a temperature between 250-300° C.
Claim 21
Independent Claim
74 words
A method of manufacturing an integrated circuit, comprising: providing a gate structure including a metal layer and a sacrificial layer; providing a silicide layer next to at least one side of the gate structure; removing the sacrificial layer; and a forming a dielectric gate insulator from the metal layer, wherein the dielectric gate insulator is aluminum oxide, wherein the forming step thermally oxides the metal layer at a temperature between 250 to 300° C.
Claim 22
Independent Claim
74 words
A method of manufacturing an integrated circuit, comprising: providing a gate structure including a metal layer and a sacrificial layer; providing a silicide layer next to at least one side of the gate structure; removing the sacrificial layer; and a forming a dielectric gate insulator from the metal layer, wherein the dielectric gate insulator is aluminum oxide, wherein the forming step thermally oxides the metal layer at a temperature between 250 to 300° C.
Claim 23
Dependent Claim
22 words
The method of claim 9 , wherein the forming the dielectric gate insulator step is selectively performed in a channel gate area.
Claim 24
Dependent Claim
19 words
The method of claim 9 , wherein the dielectric gate insulator is formed without etching the gate dielectric insulator.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-12-16 | 2006-06-17 | 2006-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-12-16 | 2010-06-17 | 2010-12-17 | $3760.00 | Window Closed / Lapsed |
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