US5607884A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating MOS transistor having source/drain region of shallow junction and silicide film
Assignee: SK Hynix Inc
•
Filing: 1994-02-02
•
Granted: 1997-03-04
•
Expires: 2014-02-02
Abstract
Abstract A method for fabricating an MOS transistor having a source/drain region of shallow junction and a thin silicide film is disclosed. The present method takes advantage of the phase separation of the Ti-excessed titanium nitride film and is capable of forming a thin silicide film in a once metal thermal annealing process. The method employs dopant implant to the titanium nitride and silicide and thermal anneal for diffusion to form source and drain regions.
Inventors
- 👤 Jeong S. Byun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 14:15
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0212; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
218 words
A method for fabricating an MOS transistor having source and drain regions of shallow depth and a silicide film, including the steps of: performing a field oxidation process to form a device separative field oxide film on a silicon substrate; forming an insulating film on the silicon substrate and a polysilicon film on the insulating film; patterning the insulating film and the polysilicon film to form a gate insulating film and a gate; forming oxide sidewall spacers on sidewalls of the gate; depositing a Ti-excessed titanium nitride film on the silicon substrate, the gate, the sidewall spacers and the field oxide film; performing a rapid thermal annealing process to form a titanium silicide film at an interface between the silicon substrate and the titanium nitride film and to form a titanium oxygen nitride film at an interface between the field oxide film and the titanium nitride film and at interfaces between the sidewall spacers and the titanium nitride film; implanting dopant ions in the titanium nitride film and the titanium silicide film; applying a thermal annealing process to the titanium nitride film and the titanium silicide film to diffuse the dopant ions into the silicon substrate, thereby forming the source and drain regions of shallow depth; and removing the titanium nitride film and the titanium oxygen nitride film.
Claim 2
Independent Claim
218 words
A method for fabricating an MOS transistor having source and drain regions of shallow depth and a silicide film, including the steps of: performing a field oxidation process to form a device separative field oxide film on a silicon substrate; forming an insulating film on the silicon substrate and a polysilicon film on the insulating film; patterning the insulating film and the polysilicon film to form a gate insulating film and a gate; forming oxide sidewall spacers on sidewalls of the gate; depositing a Ti-excessed titanium nitride film on the silicon substrate, the gate, the sidewall spacers and the field oxide film; performing a rapid thermal annealing process to form a titanium silicide film at an interface between the silicon substrate and the titanium nitride film and to form a titanium oxygen nitride film at an interface between the field oxide film and the titanium nitride film and at interfaces between the sidewall spacers and the titanium nitride film; implanting dopant ions in the titanium nitride film and the titanium silicide film; applying a thermal annealing process to the titanium nitride film and the titanium silicide film to diffuse the dopant ions into the silicon substrate, thereby forming the source and drain regions of shallow depth; and removing the titanium nitride film and the titanium oxygen nitride film.
Claim 3
Dependent Claim
21 words
A method according to claim 1, wherein the titanium nitride film is represented by the following formula TiN x wherein 0<x<1.
Claim 4
Dependent Claim
19 words
A method according to claim 1, wherein said titanium nitride film is deposited by use of reactive sputtering process.
Claim 5
Dependent Claim
22 words
A method according to claim 1, wherein said rapid thermal annealing process is carried out at a temperature of around 800° C.
Claim 6
Dependent Claim
21 words
A method according to claim 1, wherein said rapid thermal annealing process is carried out under an ammonia or nitrogen ambient.
Claim 7
Dependent Claim
22 words
A method according to claim 1, wherein the dopant ions are implanted at an acceleration energy of not less than 30 KeV.
Claim 8
Dependent Claim
23 words
A method according to claim 1, wherein the titanium nitride film and the titanium oxygen nitride film are removed with an acid solution.
Claim 9
Dependent Claim
19 words
A method according to claim 7, wherein the acid solution is a NH 4 OH/H 2 O 2 solution.
References Cited (Backward Citations)
US4887146A
Cited
US4920073A
Cited
US4923822A
Cited
US5102827A
Cited
US5196360A
Cited
US5223081A
Cited
US5268317A
Cited
US5413957A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-03 | 2000-09-02 | 2001-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-03 | 2004-09-02 | 2005-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-03 | 2008-09-02 | 2009-03-04 | $7700.00 | Window Closed / Lapsed |