US6228722B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating self-aligned metal silcide
Assignee: United Microelectronics Corp
•
Filing: 1999-04-16
•
Granted: 2001-05-08
•
Expires: 2019-04-16
Abstract
Abstract A method of fabricating a self-aligned metal silicide. Two neighboring gates are formed on a substrate, and each of the gates comprises a cap layer thereon. Source/drain regions are formed in the substrate. The source/drain regions comprise a common source/drain region between these two gates. A metal suicide layer is formed on the source/drain region. A first insulation layer is formed to cover the source/drain regions. The cap layer is removed, followed by a pre-amorphous implantation process. A metal silicide layer is formed on the gate. A passivation is formed to protect the metal silicide layer on the gate. A second insulation layer is formed to cover the passivation layer and the first insulation layer. The second and the first insulation layers are patterned to form a contact window to expose the common source/drain region.
Inventors
- 👤 Chin-Yu Lu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:08
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0212; H10D30/0213; H10D30/0223; H10D30/0227; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
152 words
A method for fabricating a self-aligned metal silicide layer applied in a process for forming a self-aligned contact window, the method comprising: providing a substrate comprising at least two gates and a plurality of source/drain regions in the substrate, wherein the gates comprise a polysilicon layer and a cap layer on the polysilicon layer, and the source/drain regions comprise a common source/drain region these two gates; forming a first metal silicide layer on the source/drain regions; forming a first insulation layer covering the first metal silicide layer; removing the cap layer; performing a pre-amorphous implantation on the polysilicon layer; forming a second metal silicide layer on the gate; forming a passivation layer covering the second metal silicide layer; forming a second insulation layer on the first insulation layer and the passivation layer; and forming a contact window penetrating through the second and the first insulation layers to expose the common source/drain region.
Claim 2
Independent Claim
152 words
A method for fabricating a self-aligned metal silicide layer applied in a process for forming a self-aligned contact window, the method comprising: providing a substrate comprising at least two gates and a plurality of source/drain regions in the substrate, wherein the gates comprise a polysilicon layer and a cap layer on the polysilicon layer, and the source/drain regions comprise a common source/drain region these two gates; forming a first metal silicide layer on the source/drain regions; forming a first insulation layer covering the first metal silicide layer; removing the cap layer; performing a pre-amorphous implantation on the polysilicon layer; forming a second metal silicide layer on the gate; forming a passivation layer covering the second metal silicide layer; forming a second insulation layer on the first insulation layer and the passivation layer; and forming a contact window penetrating through the second and the first insulation layers to expose the common source/drain region.
Claim 3
Dependent Claim
24 words
The method according to claim 1 , wherein the gates further comprise a buffer layer formed between the polysilicon layer and the cap layer.
Claim 4
Dependent Claim
20 words
The method according to claim 1 , wherein the first and the second metal silicide layers comprise cobalt silicide layers.
Claim 5
Dependent Claim
20 words
The method according to claim 1 , wherein the first and the second metal silicide layers comprise titanium silicide layers.
Claim 6
Dependent Claim
24 words
The method according to claim 4 , wherein the titanium suicide layers are formed by a thermal process comprising two stages at different temperature.
Claim 7
Dependent Claim
47 words
The method according to claim 5 , wherein the two stages of the thermal process comprise a first stage performed at a temperature of about 620° C. to about 680° C., and a second stage performed at a temperature of about 800° C. to about 900° C.
Claim 8
Dependent Claim
40 words
The method according to claim 1 , wherein the pre-amorphous implantation is performed with an ion source with a concentration of about 1×10 14 cm −2 to 1×10 15 cm −2 and with a implantation energy of about 80 KeV.
Claim 9
Independent Claim
184 words
A method for fabricating a self-aligned metal silicide layer applied in a process for forming a self-aligned contact window, the method comprising: providing a substrate comprising at least two gates and a plurality of source/drain regions in the substrate, wherein the gates comprise a polysilicon layer, a cap layer on the polysilicon layer and spacers on each sidewall of the gates, and the source/drain regions comprise a common source/drain region these two gates; etching the spacers until a part of the sidewalls of the gates is exposed, so that the source/drain region is exposed with an enlarged surface; forming a first metal silicide layer on the source/drain regions; forming a first insulation layer covering the first metal silicide layer; removing the cap layer; performing a pre-amorphous implantation on the polysilicon layer; forming a second metal suicide layer on the gate; forming a passivation layer covering the second metal silicide layer; forming a second insulation layer on the first insulation layer and the passivation layer; and forming a contact window penetrating through the second and the first insulation layers to expose the common source/drain region.
Claim 10
Independent Claim
184 words
A method for fabricating a self-aligned metal silicide layer applied in a process for forming a self-aligned contact window, the method comprising: providing a substrate comprising at least two gates and a plurality of source/drain regions in the substrate, wherein the gates comprise a polysilicon layer, a cap layer on the polysilicon layer and spacers on each sidewall of the gates, and the source/drain regions comprise a common source/drain region these two gates; etching the spacers until a part of the sidewalls of the gates is exposed, so that the source/drain region is exposed with an enlarged surface; forming a first metal silicide layer on the source/drain regions; forming a first insulation layer covering the first metal silicide layer; removing the cap layer; performing a pre-amorphous implantation on the polysilicon layer; forming a second metal suicide layer on the gate; forming a passivation layer covering the second metal silicide layer; forming a second insulation layer on the first insulation layer and the passivation layer; and forming a contact window penetrating through the second and the first insulation layers to expose the common source/drain region.
References Cited (Backward Citations)
US4753897A
Cited
US5429969A
Cited
US5712196A
Cited
US6060387A
Cited
US6093589A
Cited
US6096642A
Cited
US6083828A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-07 | 2004-11-06 | 2005-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-07 | 2008-11-06 | 2009-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-07 | 2012-11-06 | 2013-05-08 | $7700.00 | Window Closed / Lapsed |