US5994207A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Controlled cleavage process using pressurized fluid
Assignee: Silicon Genesis Corp
•
Filing: 1998-02-19
•
Granted: 1999-11-30
•
Expires: 2018-02-19
Abstract
Abstract A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Inventors
- 👤 Francois J. Henley
- 👤 Nathan Cheung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:55
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; B; B81; B81C; B81C1/00; B81C1/00349; B81C1/0038; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P30/225; H10P32/00; H10P32/10; H10P32/12; H10P32/1204; H10P52/00; H10P54/00; H10P54/50; H10P54/52; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10P95/00; H10P95/11; H10P95/112; H10W; H10W10/00; H10W10/10; H10W10/181; B81C2201/00; B81C2201/01; B81C2201/0174; B81C2201/0191; B81C2201/0192; Y; Y10; Y10S; Y10S117/00; Y10S117/915; Y10S156/00; Y10S156/918; Y10S156/93; Y10S438/00; Y10S438/974; Y10S438/977; Y10T; Y10T156/00; Y10T156/11; Y10T156/1153; Y10T156/1158; Y10T156/19; Y10T428/00; Y10T428/21; Y10T428/24; Y10T428/24802; Y10T428/24893; Y10T428/249921; Y10T428/249953; Y10T428/249955; Y10T428/249956
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
126 words
A process for forming a film of material from a substrate, said process comprising steps of: introducing particles in a selected manner through a surface of a substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth, said selected manner providing a patterned distribution of particles at said selected depth to enhance said controlled cleaving action; and providing energy using a fluid to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
Claim 2
Dependent Claim
126 words
A process for forming a film of material from a substrate, said process comprising steps of: introducing particles in a selected manner through a surface of a substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth, said selected manner providing a patterned distribution of particles at said selected depth to enhance said controlled cleaving action; and providing energy using a fluid to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
Claim 3
Dependent Claim
34 words
The process of claim 1 wherein said particles are derived from a source selected from the group consisting of hydrogen gas, helium gas, water vapor, methane, hydrogen compounds, and other light atomic mass particles.
Claim 4
Dependent Claim
22 words
The process of claim 1 wherein said particles are selected from the group consisting of neutral molecules, charged molecules, atoms, and electrons.
Claim 5
Dependent Claim
10 words
The process of claim 1 wherein said particles are energetic.
Claim 6
Dependent Claim
25 words
The process of claim 4 wherein said energetic particles have sufficient kinetic energy to penetrate through said surface to said selected depth underneath said surface.
Claim 7
Dependent Claim
29 words
The process of claim 1 wherein said step of providing energy sustains said controlled cleaving action to remove said material from said substrate to provide a film of material.
Claim 8
Dependent Claim
37 words
The process of claim 1 wherein said step of providing energy increases a controlled stress in said material and sustains said controlled cleaving action to remove said material from said substrate to provide a film of material.
Claim 9
Dependent Claim
35 words
The process of claim 1 further comprising a step of providing additional energy to said substrate to sustain said controlled cleaving action to remove said material from said substrate to provide a film of material.
Claim 10
Dependent Claim
43 words
The process of claim 1 further comprising a step of providing additional energy to said substrate to increases a controlled stress in said material and sustains said controlled cleaving action to remove said material from said substrate to provide a film of material.
Claim 11
Dependent Claim
33 words
The process of claim 1 wherein said introducing step forms damage selected from the group consisting of atomic bond damage, bond substitution, weakening, and breaking bonds of said substrate at said selected depth.
Claim 12
Dependent Claim
14 words
The process of claim 10 wherein said damage causes stress to said substrate material.
Claim 13
Dependent Claim
28 words
The process of claim 10 wherein said damage reduces an ability of said substrate material to withstand stress without a possibility of a cleaving of said substrate material.
Claim 14
Dependent Claim
21 words
The process of claim 1 wherein said propagating cleave front is selected from a single cleave front or multiple cleave fronts.
Claim 15
Dependent Claim
29 words
The process of claim 1 wherein said introducing step causes stress of said material region at said selected depth by a presence of said particles at said selected depth.
Claim 16
Dependent Claim
18 words
The process of claim 1 wherein said step of introducing is a step(s) of beam line ion implantation.
Claim 17
Dependent Claim
18 words
The process of claim 1 wherein said step of introducing is a step(s) of plasma immersion ion implantation.
Claim 18
Dependent Claim
28 words
The process of claim 1 further comprising a step of joining said surface of said substrate to a surface of a target substrate to form a stacked assembly.
Claim 19
Dependent Claim
36 words
The process of claim 1 wherein said substrate is made of a material selected from the group consisting of silicon, diamond, quartz, glass, sapphire, silicon carbide, dielectric, group III/V material, plastic, ceramic material, and multi-layered substrate.
Claim 20
Dependent Claim
10 words
The process of claim 1 wherein said surface is planar.
Claim 21
Dependent Claim
10 words
The process of claim 1 wherein said surface is curved.
Claim 22
Dependent Claim
27 words
The process of claim 1 wherein said substrate is a silicon substrate comprising an overlying layer of dielectric material, said selected depth being underneath said dielectric material.
Claim 23
Dependent Claim
19 words
The process of claim 1 wherein said fluid is selected from a static source or a fluid jet source.
Claim 24
Dependent Claim
20 words
The process of claim 1 wherein said fluid is directed to said selected depth to initiate said controlled cleaving action.
Claim 25
Dependent Claim
14 words
The process of claim 1 wherein said fluid is derived from a compressed gas.
References Cited (Backward Citations)
US3117022A
Cited
US3225820A
Cited
US5082793A
Cited
US3551213A
Cited
US3786359A
Cited
US3900636A
Cited
US3806380A
Cited
US3832219A
Cited
US3915757A
Cited
US4107350A
Cited
US3993909A
Cited
US4006340A
Cited
US3901423A
Cited
US4170662A
Cited
US4121334A
Cited
US3957107A
Cited
US4039416A
Cited
US4252837A
Cited
US4074139A
Cited
US4108751A
Cited
US4274004A
Cited
US4346123A
Cited
US4244348A
Cited
US4368083A
Cited
US4452644A
Cited
US4342631A
Cited
US4471003A
Cited
US4490190A
Cited
US4361600A
Cited
US4412868A
Cited
US4486247A
Cited
US4508056A
Cited
US4536657A
Cited
US4585945A
Cited
US4539050A
Cited
US4500563A
Cited
US4468309A
Cited
US4568563A
Cited
US4567505A
Cited
US4684535A
Cited
US4704302A
Cited
US4566403A
Cited
US4837172A
Cited
US4717683A
Cited
US4764394A
Cited
US4847792A
Cited
US4846928A
Cited
US4887005A
Cited
US5015353A
Cited
US4982090A
Cited
US4931405A
Cited
US4894709A
Cited
US4853250A
Cited
US4960073A
Cited
US4952273A
Cited
US4996077A
Cited
US5202095A
Cited
EP0379828A2
Cited
US5203960A
Cited
US5370765A
Cited
US5133826A
Cited
US5196355A
Cited
US4948458A
Cited
US5034343A
Cited
US5070040A
Cited
US5198371A
Cited
EP0504714A2
Cited
US5110748A
Cited
US5250328A
Cited
US5242861A
Cited
US5342472A
Cited
US5374564A
Cited
US5234529A
Cited
US5269880A
Cited
US5376560A
Cited
US5368710A
Cited
US5273610A
Cited
US5252178A
Cited
US5404079A
Cited
US5304509A
Cited
US5755914A
Cited
US5435880A
Cited
US5405480A
Cited
US5487785A
Cited
WO1995010718A1
Cited
US5494835A
Cited
US5804086A
Cited
US5559043A
Cited
WO1995031825A1
Cited
US5411592A
Cited
US5504328A
Cited
US5611855A
Cited
US5653811A
Cited
US5714395A
Cited
US5710057A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-29 | 2003-05-31 | 2003-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-29 | 2007-05-31 | 2007-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-29 | 2011-05-31 | 2011-11-30 | $7700.00 | Window Closed / Lapsed |