US5082793A
Expired / Lapsed
US
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Method for making solid state device utilizing ion implantation techniques
Assignee: LI SECOND FAMILY LP
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Filing: 1989-11-17
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Granted: 1992-01-21
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Expires: 2009-11-17
Abstract
Abstract A method of making a dielectric isolation integrated circuit structure in which dielectric material grooves formed by ion implantation extend down into the structure and intersect a PN junction or other active region at intersection lines such that each intersection line is within microns both laterally from the center of the groove and vertically from the bottom of the groove and the grooves continuously curve at least at the intersection lines at a radius of curvature less than 1 cm.
Inventors
- 👤 Chou H. Li
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:21
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10F; H10F71/00; C; C30; C30B; C30B21/00; C30B21/02; C30B21/04; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/104; H10D62/117; H10D62/40; H10D99/00; H10F10/00; H10F10/10; H10F10/14; H10F10/142; H10F10/19; H10F19/00; H10F19/50; H10F39/00; H10F39/10; H10F39/107; H10F77/00; H10F77/10; H10F77/16; H10F99/00; H10H; H10H29/00; H10H29/10; H10H29/14; H10H29/142; H10P; H10P95/00; H10P95/50; H10W10/021; H10W10/031; H10W10/041; H10W10/10; H10W10/20; H10W10/30; H10W10/40; H10H20/00; H10H20/80; H10H20/81; H10H20/817; H10H20/818; H10H20/819; H10H20/821; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/076; Y10S148/083; Y10S148/085; Y10S148/117; Y10S438/00; Y10S438/938
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
176 words
A method of making a solid state integrated circuit structure of multiple solid-state devices selected from the group consisting of active and passive solid-state devices, each device having an optoelectromagnetically active region which is in or adjacent the device and is selected from the group consisting of PN junction, metal-semiconductor barrier, metal-oxide barrier, semiconductor-oxide barrier, and interfacial rectifying barrier, comprising: ion-implanting a foreign substance which forms with the solid-state device material a dielectric material compound, said ion-implanting forming a dielectrically isolating groove which extends down into the structure and intersects an active region at least at one lateral side of the bottom of the groove; spacing the bottom of the groove vertically within a micron of where the groove intersects said active region; and spacing the center of the groove laterally within one micron of where the groove intersects said active regions; wherein said groove continuously curves at least where the groove intersects said active region and the radius of curvature of the groove is less than 1 cm where the groove intersects said active region.
Claim 2
Independent Claim
176 words
A method of making a solid state integrated circuit structure of multiple solid-state devices selected from the group consisting of active and passive solid-state devices, each device having an optoelectromagnetically active region which is in or adjacent the device and is selected from the group consisting of PN junction, metal-semiconductor barrier, metal-oxide barrier, semiconductor-oxide barrier, and interfacial rectifying barrier, comprising: ion-implanting a foreign substance which forms with the solid-state device material a dielectric material compound, said ion-implanting forming a dielectrically isolating groove which extends down into the structure and intersects an active region at least at one lateral side of the bottom of the groove; spacing the bottom of the groove vertically within a micron of where the groove intersects said active region; and spacing the center of the groove laterally within one micron of where the groove intersects said active regions; wherein said groove continuously curves at least where the groove intersects said active region and the radius of curvature of the groove is less than 1 cm where the groove intersects said active region.
Claim 3
Dependent Claim
31 words
A method as in claim 1 wherein the solid-state device material is semiconductor silicon and said ion-implanting step comprises ion-implanting an element selected from the group consisting of oxygen and nitrogen.
Claim 4
Dependent Claim
36 words
A method as in claim 1 wherein said compound formation during the ion implantation step creates a beneficial residual compressive stress in the solid-state device material at the places where the groove intersects said active region.
Claim 5
Dependent Claim
12 words
A method as in claim 1 wherein said foreign substance comprises nitrogen.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-01-20 | 1995-07-22 | 1996-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-20 | 1999-07-22 | 2000-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-20 | 2003-07-22 | 2004-01-21 | $7700.00 | Window Closed / Lapsed |