US4996077A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Distributed ECR remote plasma processing and apparatus
Assignee: Texas Instruments Inc
•
Filing: 1988-10-07
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Granted: 1991-02-26
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Expires: 2008-10-07
Abstract
Abstract A distributed electron cyclotron resonance remote plasma processing apparatus and method which includes generating electron cyclotron resonance activated species in plasma formation regions distributed peripherally around, remote from the wafer processing chamber and in fluid communication with the main transfer chamber; containing the activated species using a microwave gas discharge and a magnetic field in the plasma formation regions; introducing the plasma streams to the main transfer chamber; creating a magnetic mirror in the main transfer chamber using a magnetic field; and introducing the species to the process chamber and to a face of the workpiece. Such an apparatus could use multiple energy/excitation sources.
Inventors
- 👤 Mehrdad M. Moslehi
- 👤 Steve S. Huang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:12
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32917; H01J37/32935; C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; C23C16/50; C23C16/511; H01J37/32009; H01J37/32357; H01J37/32431; H01J37/3266; H01J37/32678; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3341
Claims Analysis
Total Claims: 69
Claim 1
Independent Claim
82 words
A distributed electron cyclotron resonance remote plasma processing apparatus, comprising: (a) a processing chamber; (b) a main transfer chamber in fluid communication with the processing chamber; (c) a plurality of peripheral magnet bars substantially surrounding the main transfer chamber; (d) a plurality of electron cyclotron resonance plasma formation regions peripherally distributed around the periphery of, remote from, and in fluid communication with the main transfer chamber; and (e) a plurality of magnet bars substantially surrounding external surfaces of said plasma formation regions.
Claim 2
Dependent Claim
82 words
A distributed electron cyclotron resonance remote plasma processing apparatus, comprising: (a) a processing chamber; (b) a main transfer chamber in fluid communication with the processing chamber; (c) a plurality of peripheral magnet bars substantially surrounding the main transfer chamber; (d) a plurality of electron cyclotron resonance plasma formation regions peripherally distributed around the periphery of, remote from, and in fluid communication with the main transfer chamber; and (e) a plurality of magnet bars substantially surrounding external surfaces of said plasma formation regions.
Claim 3
Dependent Claim
12 words
The apparatus of claim 1 wherein the magnetic bars are permanent magnets.
Claim 4
Dependent Claim
11 words
The apparatus of claim 2 wherein the permanent magnets are ceramic.
Claim 5
Dependent Claim
29 words
The apparatus of claim 2 wherein the plurality of magnetic bars are arranged so that electron cyclotron resonance can be established at some point in the plasma formation region.
Claim 6
Dependent Claim
29 words
The apparatus of claim 2 wherein the plurality of peripheral magnetic bars are arranged so that magnetic cusps are formed on the internal surface of the main transfer chamber.
Claim 7
Dependent Claim
33 words
The apparatus of claim 5 wherein the plurality of peripheral magnetic bars are arranged with the axis of the polarity of their magnetic fields perpendicular to a radius of the main transfer chamber.
Claim 8
Dependent Claim
33 words
The apparatus of claim 5 wherein the plurality of peripheral magnetic bars are arranged with the axis of the polarity of their magnetic fields are along a radius of the main transfer chamber.
Claim 9
Dependent Claim
28 words
The apparatus of claim 2 wherein the plurality of magnetic bars are arranged so that magnetic cusps are formed on the internal surface of the plasma formation region.
Claim 10
Dependent Claim
11 words
The apparatus of claim 1 further including a plurality of antennae.
Claim 11
Dependent Claim
11 words
The apparatus of claim 1 further including a non-plasma gas injector.
Claim 12
Dependent Claim
17 words
The apparatus of claim 1, further including a plurality of energy sources coupled into the process chamber.
Claim 13
Dependent Claim
33 words
The apparatus of claim 11 wherein one of the plurality of energy sources coupled into the process chamber is taken from the group consisting of an ultraviolet, RF, laser, and heat energy source.
Claim 14
Dependent Claim
12 words
The apparatus of claim 11 wherein the heat energy source is radiative.
Claim 15
Dependent Claim
12 words
The apparatus of claim 11 wherein the heat energy source is conductive.
Claim 16
Dependent Claim
14 words
The apparatus of claim 9 further including a plurality of antennae encapsulated in sapphire.
Claim 17
Dependent Claim
16 words
The apparatus of claim 15 further including a gas injector in the vicinity of each antenna.
Claim 18
Dependent Claim
17 words
The apparatus of claim 15 further including gas injectors in the vicinity of each of the antennae.
Claim 19
Dependent Claim
91 words
A distributed electron cyclotron resonance remote plasma processing apparatus, comprising: (a) a processing chamber; (b) a main transfer chamber in fluid communication with the processing chamber; (c) a plurality peripheral magnet bars surrounding the main transfer chamber; (d) a toroidal plasma formation region of trapezoidal cross section around the periphery of, remote from, and in fluid communication with the main transfer chamber; (e) a plurality of magnet bars substantially surrounding external surfaces of the plasma formation region; and (f) a plurality of plasma generators peripherally distributed in the plasma formation region.
Claim 20
Dependent Claim
91 words
A distributed electron cyclotron resonance remote plasma processing apparatus, comprising: (a) a processing chamber; (b) a main transfer chamber in fluid communication with the processing chamber; (c) a plurality peripheral magnet bars surrounding the main transfer chamber; (d) a toroidal plasma formation region of trapezoidal cross section around the periphery of, remote from, and in fluid communication with the main transfer chamber; (e) a plurality of magnet bars substantially surrounding external surfaces of the plasma formation region; and (f) a plurality of plasma generators peripherally distributed in the plasma formation region.
Claim 21
Dependent Claim
12 words
The apparatus of claim 1 wherein the chamber is fabricated from aluminum.
Claim 22
Dependent Claim
20 words
The apparatus of claim 1 wherein the chamber is fabricated from aluminum the inner suface of which is hard anodized.
Claim 23
Dependent Claim
20 words
The apparatus of claim 1 wherein the chamber is fabricated from a material whose inner surface has been properly passivated.
Claim 24
Dependent Claim
12 words
The apparatus of claim 1 wherein the chamber is circular in shape.
Claim 25
Dependent Claim
16 words
The apparatus of claim 1 wherein a face of the wafer to be processed faces downward.
Claim 26
Dependent Claim
13 words
The apparatus of claim 1 wherein a radius of the wafer faces downward.
Claim 27
Dependent Claim
12 words
The apparatus of claim 18 wherein the magnetic bars are permanent magnets.
Claim 28
Dependent Claim
10 words
The apparatus of claim 25 wherein permanent magnets are ceramic.
Claim 29
Dependent Claim
29 words
The apparatus of claim 25 wherein the plurality of peripheral magnetic bars are arranged so that magnetic cusps are formed on the internal surface of the main transfer chamber.
Claim 30
Dependent Claim
29 words
The apparatus of claim 27 wherein the plurality of magnetic bars are arranged so that electron cyclotron resonance can be established at some point in the plasma formation region.
Claim 31
Dependent Claim
33 words
The apparatus of claim 27 wherein the plurality of peripheral magnetic bars are arranged with the axis of the polarity of their magnetic fields perpendicular to a radius of the main transfer chamber.
Claim 32
Dependent Claim
33 words
The apparatus of claim 27 wherein the plurality of peripheral magnetic bars are arranged with the axis of the polarity of their magnetic fields are along a radius of the main transfer chamber.
Claim 33
Dependent Claim
28 words
The apparatus of claim 27 wherein the plurality of magnetic bars are arranged so that magnetic cusps are formed on the internal surface of the plasma formation region.
Claim 34
Dependent Claim
11 words
The apparatus of claim 18 further including a non-plasma gas injector.
Claim 35
Dependent Claim
17 words
The apparatus of claim 18, further including a plurality of energy sources coupled into the process chamber.
Claim 36
Dependent Claim
12 words
The apparatus of claim 33 wherein the heat energy source is conductive.
Claim 37
Dependent Claim
33 words
The apparatus of claim 33 wherein one of the plurality of energy sources coupled into the process chamber is taken from the group consisting of an ultraviolet, RF, laser, and heat energy source.
Claim 38
Dependent Claim
12 words
The apparatus of claim 33 wherein the heat energy source is radiative.
Claim 39
Dependent Claim
16 words
The apparatus of claim 18 wherein the toroidal plasma formation chamber has a trapezoidal cross section.
Claim 40
Dependent Claim
16 words
The apparatus of claim 37 wherein the toroidal plasma formation chamber has a rectangular cross section.
Claim 41
Dependent Claim
32 words
The apparatus of claim 37 wherein the trapezoidal cross section is wider at an opening into the main transfer chamber than it is at an outer end of the plasma formation region.
Claim 42
Dependent Claim
15 words
The apparatus of claim 18 wherein the plasma generator includes a plurality of microwave antennae.
Claim 43
Dependent Claim
15 words
The apparatus of claim 40 further including a plurality of microwave antennae encapsulated in sapphire.
Claim 44
Dependent Claim
16 words
The apparatus of claim 40 further including a gas injector in the vicinity of each antenna.
Claim 45
Dependent Claim
13 words
The apparatus of claim 18 wherein a radius of the wafer faces downward.
Claim 46
Dependent Claim
12 words
The apparatus of claim 18 wherein the chamber is fabricated from aluminum.
Claim 47
Dependent Claim
20 words
The apparatus of claim 18 wherein the chamber is fabricated from aluminum the inner suface of which is hard anodized.
Claim 48
Dependent Claim
20 words
The apparatus of claim 18 wherein the chamber is fabricated from a material whose inner surface has been properly passivated.
Claim 49
Dependent Claim
12 words
The apparatus of claim 18 wherein the chamber is circular in shape.
Claim 50
Dependent Claim
16 words
The apparatus of claim 18 wherein a face of the wafer to be processed faces downward.
Claim 51
Dependent Claim
95 words
A distributed electron cyclotron resonance remote plasma processing apparatus, comprising: (a) a processing chamber; (b) a main transfer chamber in fluid communication with the processing chamber; (c) a first plurality of permanent magnets surrounding the main transfer chamber; (d) a plurality of plasma formation regions peripherally distributed around the main transfer chamber; (e) a second plurality permanent magnets surrounding the external surfaces of the plasma formation regions; (f) a plurality of peripherally distributed encapsulated antennae; and (g) a plurality of gas injectors each positioned in the vicinity of one of the plurality of microwave antennae.
Claim 52
Dependent Claim
95 words
A distributed electron cyclotron resonance remote plasma processing apparatus, comprising: (a) a processing chamber; (b) a main transfer chamber in fluid communication with the processing chamber; (c) a first plurality of permanent magnets surrounding the main transfer chamber; (d) a plurality of plasma formation regions peripherally distributed around the main transfer chamber; (e) a second plurality permanent magnets surrounding the external surfaces of the plasma formation regions; (f) a plurality of peripherally distributed encapsulated antennae; and (g) a plurality of gas injectors each positioned in the vicinity of one of the plurality of microwave antennae.
Claim 53
Dependent Claim
33 words
The apparatus of claim 49 wherein the plurality of peripheral magnetic bars are arranged with the axis of the polarity of their magnetic fields are along a radius of the main transfer chamber.
Claim 54
Dependent Claim
15 words
The apparatus of claim 49 further including a plurality of microwave antennae encapsulated in sapphire.
Claim 55
Dependent Claim
17 words
The apparatus of claim 49 further including a plurality of energy sources coupled into the process chamber.
Claim 56
Dependent Claim
12 words
The apparatus of claim 49 wherein the chamber is fabricated from aluminum.
Claim 57
Dependent Claim
20 words
The apparatus of claim 49 wherein the chamber is fabricated from aluminum the inner suface of which is hard anodized.
Claim 58
Dependent Claim
20 words
The apparatus of claim 49 wherein the chamber is fabricated from a material whose inner surface has been properly passivated.
Claim 59
Dependent Claim
12 words
The apparatus of claim 49 wherein the chamber is circular in shape.
Claim 60
Dependent Claim
16 words
The apparatus of claim 49 wherein a face of the wafer to be processed faces downward.
Claim 61
Dependent Claim
18 words
The apparatus of claim 49 a radius of a face of the wafer to be processed faces downward.
Claim 62
Dependent Claim
33 words
The apparatus of claim 49 wherein the plurality of peripheral magnetic bars are arranged with the axis of the polarity of their magnetic fields perpendicular to a radius of the main transfer chamber.
Claim 63
Independent Claim
88 words
A method for manufacturing an integrated circuit device, comprising: (a) generating electron cyclotron resonance activated species in plasma formation regions distributed peripherally, remote from and in fluid communication with a main transfer chamber; (b) containing the activated species using a magnetic field in the plasma formation regions; (c) introducing the activated species to the main transfer chamber; (d) creating a magnetic mirror in the main transfer chamber using a magnetic field; and (e) introducing the activated species to the process chamber and to a face of the workpiece.
Claim 64
Independent Claim
88 words
A method for manufacturing an integrated circuit device, comprising: (a) generating electron cyclotron resonance activated species in plasma formation regions distributed peripherally, remote from and in fluid communication with a main transfer chamber; (b) containing the activated species using a magnetic field in the plasma formation regions; (c) introducing the activated species to the main transfer chamber; (d) creating a magnetic mirror in the main transfer chamber using a magnetic field; and (e) introducing the activated species to the process chamber and to a face of the workpiece.
Claim 65
Dependent Claim
16 words
The method of claim 60 wherein a face of the wafer to be processed faces downward.
Claim 66
Dependent Claim
16 words
The method of claim 60 wherein the activated species are generated using a microwave energy source.
Claim 67
Dependent Claim
14 words
The method of claim 60 wherein additional reactants are introduced to the process chamber.
Claim 68
Dependent Claim
20 words
The method of claim 60 wherein the additional reactants are activated by other energy sources coupled into the process chamber.
Claim 69
Dependent Claim
21 words
The method of claim 60 wherein the plasma stream and other non plasma reactants are activated in the main transfer chamber.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-25 | 1994-08-27 | 1995-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-25 | 1998-08-27 | 1999-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-25 | 2002-08-27 | 2003-02-26 | $7700.00 | Window Closed / Lapsed |