US4074139A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus and method for maskless ion implantation
Assignee: RCA Corp
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Filing: 1976-12-27
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Granted: 1978-02-14
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Expires: 1996-12-27
Abstract
Abstract A method and apparatus for implanting dopant material into a substrate of semiconductive material in a preselected pattern without utilizing a mask comprises the use of a source template which is formed of the desired dopant material in the configuration of the pattern to be implanted. Ions of the dopant material are sputtered from the template by bombardment with an ionized gas, and these dopant ions are then filtered from unwanted ion species and accelerated into the substrate while remaining in the original template pattern.
Inventors
- 👤 Jacques I. Pankove
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:28
CPC Classifications
H; H01; H01J; H01J49/00; H01J49/26; H01J49/28; H01J49/284; H01J49/286; H01J37/00; H01J37/30; H01J37/317; H01J37/3171; H01J37/3172
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
96 words
A method of implanting a dopant material into a substrate of semiconductive material in a preselected pattern without utilizing a mask, said method comprising the steps of: forming a source template having at least one dopant material formed thereon in said preselected pattern; sputtering ions of said dopant material from said template by ion bombardment from a primary ion source; filtering said ions of said dopant material from ions of other materials by means of an ionic filter; and implanting said ions of said dopant material into said substrate in the pattern of said source template.
Claim 2
Independent Claim
96 words
A method of implanting a dopant material into a substrate of semiconductive material in a preselected pattern without utilizing a mask, said method comprising the steps of: forming a source template having at least one dopant material formed thereon in said preselected pattern; sputtering ions of said dopant material from said template by ion bombardment from a primary ion source; filtering said ions of said dopant material from ions of other materials by means of an ionic filter; and implanting said ions of said dopant material into said substrate in the pattern of said source template.
Claim 3
Dependent Claim
22 words
The method of claim 1, wherein said filtering step is performed by utilizing a magnetic prism in combination with an electrostatic mirror.
Claim 4
Dependent Claim
16 words
The method of claim 1, wherein said implanting step comprises the step of accelerating said ions.
Claim 5
Independent Claim
84 words
An apparatus for implanting a dopant material into a substrate of semiconductive material in a preselected pattern without utilizing a mask, said apparatus comprising: a source template having at least one dopant material formed thereon in said preselected pattern; a means for sputtering ions of said dopant material from said template by ion bombardment from a primary ion source, an ionic filter capable of selecting desired dopant ions from ions of other materials; and means for implanting said desired dopant ions into said substrate.
Claim 6
Independent Claim
84 words
An apparatus for implanting a dopant material into a substrate of semiconductive material in a preselected pattern without utilizing a mask, said apparatus comprising: a source template having at least one dopant material formed thereon in said preselected pattern; a means for sputtering ions of said dopant material from said template by ion bombardment from a primary ion source, an ionic filter capable of selecting desired dopant ions from ions of other materials; and means for implanting said desired dopant ions into said substrate.
Claim 7
Dependent Claim
20 words
The apparatus of claim 4, wherein said ionic filter comprises the combination of a magnetic prism and an electrostatic mirror.
Claim 8
Dependent Claim
37 words
The apparatus of claim 4 wherein said primary ion source is directed toward template, said primary ions having sufficient energy to induce ions of said dopant material to be sputtered from said template by secondary ion emission.
Claim 9
Dependent Claim
21 words
The apparatus of claim 4, wherein said means for implanting comprises an electric field by which said dopant ions are accelerated.
References Cited (Backward Citations)
US3500042A
Cited
US3866042A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-02-13 | 1981-08-15 | 1982-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-02-13 | 1985-08-15 | 1986-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-02-13 | 1989-08-15 | 1990-02-14 | $7700.00 | Window Closed / Lapsed |