US4452644A
Expired / Lapsed
US
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Process for doping semiconductors
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1982-05-21
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Granted: 1984-06-05
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Expires: 2002-05-21
Abstract
Abstract The present invention relates to a process for doping semiconductors, comprising the steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said layer by means of a beam of bombarding particles, which are in particular non-dopant, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; and effecting transitory annealing. The invention is applicable to the manufacture of solar cells.
Inventors
- 👤 Michel Bruel
- 👤 Philippe Spinelli
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:03
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/214; H10P50/00; H10P50/20; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
201 words
A process for doping semiconductors consisting in implanting dopant particles in a substrate an in rendering them electrically active, so as to modify the physical properties of the substrate, comprising the steps of: effecting an implantation by recoil of the dopant particles in the substrate, which consists in depositing on the surface of the substrate a layer of material containing dopant particles, and in bombarding said layer by means of a beam of bombarding particles, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; effecting transitory annealing, which consists in bringing to the surface, or to the level of the first implanted layers, for a very short length of time, an energy density such that very high temperatures are reached, so as to produce a local liquefaction of the first layers of the substrate, wherein the bombardment of the layer of material containing the doping particles deposited on the surface of the substrate, the elimination of the doping layer, after penetration of the doping particles into the substrate, and the transitory annealing are performed at the same time by means of the same beam of particles.
Claim 2
Dependent Claim
201 words
A process for doping semiconductors consisting in implanting dopant particles in a substrate an in rendering them electrically active, so as to modify the physical properties of the substrate, comprising the steps of: effecting an implantation by recoil of the dopant particles in the substrate, which consists in depositing on the surface of the substrate a layer of material containing dopant particles, and in bombarding said layer by means of a beam of bombarding particles, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; effecting transitory annealing, which consists in bringing to the surface, or to the level of the first implanted layers, for a very short length of time, an energy density such that very high temperatures are reached, so as to produce a local liquefaction of the first layers of the substrate, wherein the bombardment of the layer of material containing the doping particles deposited on the surface of the substrate, the elimination of the doping layer, after penetration of the doping particles into the substrate, and the transitory annealing are performed at the same time by means of the same beam of particles.
Claim 3
Dependent Claim
20 words
A doping process according to claim 1, wherein the layer of material containing the dopant particles is made by evaporation.
Claim 4
Dependent Claim
22 words
A doping process according to claim 1, wherein the beam of bombarding particles is constituted by a beam of rare gas ions.
Claim 5
Dependent Claim
17 words
A doping process according to claim 1, wherein the transitory annealing is performed in the liquid phase.
Claim 6
Dependent Claim
17 words
A doping process according to claim 1, wherein the transitory annealing is performed in the solid phase.
Claim 7
Dependent Claim
23 words
A doping process according to claim 1, wherein the different steps of the process are carried out in the same enclosure in vacuo.
Claim 8
Dependent Claim
18 words
A doping process according to claim 3, wherein the rare gas ion beam is an argon ion beam.
Claim 9
Dependent Claim
27 words
A doping process according to claim 7, wherein the argon ion beam transports an energy of approximately 200 kiloelectron-volts and has an intensity of approximately 400 microamperes.
References Cited (Backward Citations)
GB1402998A
Cited
US4370176A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-05 | 1987-12-05 | 1988-06-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-05 | 1991-12-05 | 1992-06-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-05 | 1995-12-05 | 1996-06-05 | $7700.00 | Window Closed / Lapsed |