US4370176A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fast droping of semiconductors
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1981-01-23
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Granted: 1983-01-25
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Expires: 2001-01-23
Abstract
Abstract The present invention relates to a process for fast doping of semiconductors, consisting in implanting foreign particles in a substrate and in rendering them electrically active so as to modify the physical properties of said substrate, wherein the foreign particles constituting the dopant material arrive on the substrate closely in time and space so that the energy brought by each particle when it is implanted in the substrate cooperates with the energy of the other particles so as to produce a local liquefaction of the substrate, allowing the particles to be positioned in the substitutional sites of the crystal lattice of the substrate and allowing said crystal lattice, which was disturbed when the particles penetrated in the substrate, to be rearranged.
Inventors
- 👤 Michel Bruel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:56
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/224; C; C30; C30B; C30B31/00; C30B31/20; C30B31/22; H10P30/202; H10P30/204; H10P30/21
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
121 words
A process for fast doping of semiconductors consisting of implanting foreign particles in a substrate and in rendering said particles electrically active so as to modify the physical properties of said substrate, comprising the steps of: subjecting said substrate to a bombardment closely in time and space of said foreign particles constituting a dopant material wherein an energy brought by each particle when it is implanted in said substrate is adjusted so as to produce in cooperation with the other particles a local liquefaction of said substrate; allowing said particles to be positioned in substitutional sites of the crystal lattice of said substrate; and allowing said crystal lattice which was disturbed when said particles penetrated in said substrate, to be rearranged.
Claim 2
Dependent Claim
121 words
A process for fast doping of semiconductors consisting of implanting foreign particles in a substrate and in rendering said particles electrically active so as to modify the physical properties of said substrate, comprising the steps of: subjecting said substrate to a bombardment closely in time and space of said foreign particles constituting a dopant material wherein an energy brought by each particle when it is implanted in said substrate is adjusted so as to produce in cooperation with the other particles a local liquefaction of said substrate; allowing said particles to be positioned in substitutional sites of the crystal lattice of said substrate; and allowing said crystal lattice which was disturbed when said particles penetrated in said substrate, to be rearranged.
Claim 3
Dependent Claim
22 words
The doping process of claim 1, wherein the particles are, on the substrate, in the form of an intense, pulsed ion beam.
Claim 4
Dependent Claim
21 words
The doping process of claim 1, wherein the particles are sent onto the substrate in the form of a cluster beam.
Claim 5
Dependent Claim
33 words
The doping process of any one of claim 1, wherein the particles may be combined with another particle beam so as to supply additional energy necessary for the local liquefaction of the substrate.
Claim 6
Dependent Claim
39 words
The doping process of any one of claim 1, wherein the particles are accelerated with the aid of an electric field, enabling all or parts of the energy necessary for the local liquefaction of the substrate, to be furnished.
Claim 7
Dependent Claim
22 words
The doping process of claim 2, wherein the intense, pulsed beam is fixed with respect to the substrate and modulated in intensity.
Claim 8
Dependent Claim
26 words
The doping process of claim 2, wherein the intense pulsed beam is obtained at each point of the substrate by scanning of an intense continuous beam.
Claim 9
Dependent Claim
32 words
The doping process of any one of claims 2 to 7, wherein the ion beam is obtained from an interaction between a laser beam and a target constituted by the dopant material.
Claim 10
Dependent Claim
107 words
The doping process of any one of claims 2 to 7, wherein the ion beam is obtained with the aid of a plasma accelerator allowing the ion beam to focus and constituted by a cylindrical electrode, a filiform electrode coaxial with respect to this cylindrical electrode, means for applying a high voltage between these electrodes, means for making an electric discharge at one of the ends of the space between electrodes and means for introducing at this end a blast of gas, so that the electric discharge propagates towards the other end of the space between electrodes and creates a hot, dense plasma at this other end.
Claim 11
Dependent Claim
69 words
The doping process of any one of claims 2 to 7, wherein the ion beam is obtained with the aid of a reflex triode source constituted by two cathodes placed on either side of an anode of small thickness allowing the electrons emitted by one of the cathodes to pass through said anode, the electrons then being reflected by the other cathode on the anode constituted by dopant material.
Claim 12
Dependent Claim
51 words
The doping process of any one of claims 2 to 7, wherein the ion beam is obtained with the aid of a diode constituted by a cathode and an anode placed in a magnetic field perpendicular to the electric field created between the cathode and the anode constituted by dopant material.
Claim 13
Dependent Claim
73 words
The doping process of any one of claims 2 to 7, wherein the ion beam is obtained with the aid of a diode constituted by a cathode which emits electrons, these electrons are picked up by an anode of rounded shape and constituted by the dopant material, the interaction of the electrons with the anode allowing the production of the ion beam which is focused due to the very shape of said anode.
Claim 14
Dependent Claim
42 words
The doping process of any one of claims 2 to 7, wherein the ion beam is obtained by a vacuum spark ionization source, constituted by two electrodes between which a spark is produced, one of the electrodes being constituted by dopant material.
Claim 15
Dependent Claim
28 words
The doping process of claim 3, wherein the cluster beam is obtained from a solid constituted by the dopant material, by a method of rapid desorption in vacuo.
Claim 16
Dependent Claim
24 words
The doping process of claim 3, wherein the cluster beam is obtained from impact of heavy atoms on a target constituted by dopant material.
Claim 17
Dependent Claim
23 words
The doping process of claim 3, wherein the cluster beam is obtained by a supersonic expansion of vapour through a nozzle in vacuo.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-24 | 1986-07-26 | 1987-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-24 | 1990-07-26 | 1991-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-24 | 1994-07-26 | 1995-01-25 | $7700.00 | Window Closed / Lapsed |