US4120700A
Expired / Lapsed
US
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Method of producing p-n junction type elements by ionized cluster beam deposition and ion-implantation
Assignee: Futaba Corp
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Filing: 1976-12-28
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Granted: 1978-10-17
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Expires: 1996-12-28
Abstract
Abstract A p-n junction type solid-state element having a substrate, a substrate electrode coated on the substrate, a p-n junction type semiconductor layer coated on the substrate having the substrate electrode thereon, and an upper terminal electrode coated on the p-n junction type semiconductor layer; in which the p-n junction type semiconductor layer is formd by coating an n-type (or p-type) semiconductor layer on the substrate having the substrate electrode thereon by the ion-plating method and then by forming a p-type (or n-type) semiconductor layer in the upper surface region of the n-type (or p-type) seminconductor layer by the ion-implantation method.
Inventors
- 👤 Kiyoshi Morimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 03:18
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/121; C; C23; C23C; C23C14/00; C23C14/22; C23C14/221; H10F71/134; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10P; H10P14/00; H10P14/20; H10P14/22; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
231 words
A method of producing a p-n junction type solid-state element comprising the steps of: providing a substrate; forming a substrate electrode on at least a part of the upper surface of the substrate; vaporizing a semiconductor material of one impurity type in a vacuum region to form a vapor of said material; bombarding the vapor with electrons to ionize at least a part thereof; accelerating the ionized vapor in an electric field to cause the vapor to impinge on the substrate electrode to form an ion-plated semiconductor layer of the one impurity type on the substrate, the substrate electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the one impurity type; ionizing impurity atoms such as can form a semiconductor layer having the type of conductivity opposite to that of the semiconductor layer of the one impurity type; accelerating the impurity ions by giving them kinetic energies; implanting the impurity ions in the semiconductor layer of the one impurity type to form an ion-implanted semiconductor layer of the other impurity type; and forming an upper terminal electrode on at least a part of the upper surface of the semiconductor layer of the other impurity type, the upper terminal electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the other impurity type.
Claim 2
Independent Claim
231 words
A method of producing a p-n junction type solid-state element comprising the steps of: providing a substrate; forming a substrate electrode on at least a part of the upper surface of the substrate; vaporizing a semiconductor material of one impurity type in a vacuum region to form a vapor of said material; bombarding the vapor with electrons to ionize at least a part thereof; accelerating the ionized vapor in an electric field to cause the vapor to impinge on the substrate electrode to form an ion-plated semiconductor layer of the one impurity type on the substrate, the substrate electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the one impurity type; ionizing impurity atoms such as can form a semiconductor layer having the type of conductivity opposite to that of the semiconductor layer of the one impurity type; accelerating the impurity ions by giving them kinetic energies; implanting the impurity ions in the semiconductor layer of the one impurity type to form an ion-implanted semiconductor layer of the other impurity type; and forming an upper terminal electrode on at least a part of the upper surface of the semiconductor layer of the other impurity type, the upper terminal electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the other impurity type.
Claim 3
Independent Claim
251 words
A method of producing a p-n junction type solid-state element comprising the steps of: providing a substrate; forming a substrate electrode on at least a part of the upper surface of the substrate; vaporizing a semiconductor material of one impurity type in a vacuum region to form a vapor of said material; jetting the vapor into a vacuum region of about 10 -2 Torr or less to form clusters; bombarding the clusters with electrons to ionize at least a part thereof; accelerating the ionized clusters in an electric field to cause the clusters to impinge on the substrate electrode to form a cluster ion beam deposited semiconductor layer of the one impurity type on the substrate, the substrate electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the one impurity type; ionizing impurity atoms such as can form a semiconductor layer having the type of conductivity opposite to that of the semiconductor layer of the one impurity type; accelerating the impurity ions by giving them kinetic energies; implanting the impurity ions in the semiconductor layer of the one impurity type to form an ion-implanted semiconductor layer of the other impurity type; and forming an upper terminal electrode on at least a part of the upper surface of the semiconductor layer of the other impurity type, the upper terminal electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the other impurity type.
Claim 4
Independent Claim
251 words
A method of producing a p-n junction type solid-state element comprising the steps of: providing a substrate; forming a substrate electrode on at least a part of the upper surface of the substrate; vaporizing a semiconductor material of one impurity type in a vacuum region to form a vapor of said material; jetting the vapor into a vacuum region of about 10 -2 Torr or less to form clusters; bombarding the clusters with electrons to ionize at least a part thereof; accelerating the ionized clusters in an electric field to cause the clusters to impinge on the substrate electrode to form a cluster ion beam deposited semiconductor layer of the one impurity type on the substrate, the substrate electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the one impurity type; ionizing impurity atoms such as can form a semiconductor layer having the type of conductivity opposite to that of the semiconductor layer of the one impurity type; accelerating the impurity ions by giving them kinetic energies; implanting the impurity ions in the semiconductor layer of the one impurity type to form an ion-implanted semiconductor layer of the other impurity type; and forming an upper terminal electrode on at least a part of the upper surface of the semiconductor layer of the other impurity type, the upper terminal electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the other impurity type.
Claim 5
Independent Claim
289 words
A method of producing a p-n junction type solid-state element comprising the steps of: providing a substrate; vaporizing a metal in a vacuum region to form a vapor of said metal; bombarding the vapor with electrons to ionize at least a part thereof; accelerating the ionized vapor in an electric field to cause the vapor to impinge on the substrate to form an ion-plated substrate electrode on at least a part of the upper surface of the substrate; vaporizing a semiconductor material of one impurity type in a vacuum region to form a vapor of said semiconductor material; bombarding the vapor of said semiconductor material with electrons to ionize at least a part thereof; accelerating the ionized vapor of said semiconductor material in an electric field to cause the vapor of said semiconductor material to impinge on the substrate electrode to form an ion-plated semiconductor layer of the one impurity type on the substrate, the substrate electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the one impurity type; ionizing impurity atoms such as can form a semiconductor layer having the type of conductivity opposite to that of the semiconductor layer of the one impurity type; accelerating the impurity ions by giving them kinetic energies; implanting the impurity ions in the semiconductor layer of the one impurity type to form an ion-implanted semiconductor layer of the other impurity type; and forming an upper terminal electrode on at least a part of the upper surface of the semiconductor layer of the other impurity type, the upper terminal electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the other impurity type.
Claim 6
Independent Claim
289 words
A method of producing a p-n junction type solid-state element comprising the steps of: providing a substrate; vaporizing a metal in a vacuum region to form a vapor of said metal; bombarding the vapor with electrons to ionize at least a part thereof; accelerating the ionized vapor in an electric field to cause the vapor to impinge on the substrate to form an ion-plated substrate electrode on at least a part of the upper surface of the substrate; vaporizing a semiconductor material of one impurity type in a vacuum region to form a vapor of said semiconductor material; bombarding the vapor of said semiconductor material with electrons to ionize at least a part thereof; accelerating the ionized vapor of said semiconductor material in an electric field to cause the vapor of said semiconductor material to impinge on the substrate electrode to form an ion-plated semiconductor layer of the one impurity type on the substrate, the substrate electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the one impurity type; ionizing impurity atoms such as can form a semiconductor layer having the type of conductivity opposite to that of the semiconductor layer of the one impurity type; accelerating the impurity ions by giving them kinetic energies; implanting the impurity ions in the semiconductor layer of the one impurity type to form an ion-implanted semiconductor layer of the other impurity type; and forming an upper terminal electrode on at least a part of the upper surface of the semiconductor layer of the other impurity type, the upper terminal electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the other impurity type.
Claim 7
Independent Claim
290 words
A method of producing a p-n junction type solid-state element comprising the steps of: providing a substrate; forming a substrate electrode on at least a part of the upper surface of the substrate; vaporizing a semiconductor material of one impurity type in a vacuum region to form a vapor of said material; bombarding the vapor with electrons to ionize at least a part thereof; accelerating the ionized vapor in an electric field to cause the vapor to impinge on the substrate electrode to form an ion-plated semiconductor layer of the one impurity type on the substrate, the substrate electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the one impurity type; ionizing impurity atoms such as can form a semiconductor layer having the type of conductivity opposite to that of the semiconductor layer of the one impurity type; accelerating the impurity ions by giving them kinetic energies; implanting the impurity ions in the semiconductor layer of the one impurity type to form an ion-implanted semiconductor layer of the other impurity type; vaporizing a metal in a vacuum region to form a vapor of said metal; bombarding the vapor of said metal with electrons to ionize at least a part thereof; accelerating the ionized vapor of said metal in an electric field to cause the vapor of said metal to impinge on the semiconductor layer of the other impurity type to form an ion-plated upper terminal electrode on at least a part of the upper surface of the semiconductor layer of the other impurity type, the upper terminal electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the other impurity type.
Claim 8
Independent Claim
290 words
A method of producing a p-n junction type solid-state element comprising the steps of: providing a substrate; forming a substrate electrode on at least a part of the upper surface of the substrate; vaporizing a semiconductor material of one impurity type in a vacuum region to form a vapor of said material; bombarding the vapor with electrons to ionize at least a part thereof; accelerating the ionized vapor in an electric field to cause the vapor to impinge on the substrate electrode to form an ion-plated semiconductor layer of the one impurity type on the substrate, the substrate electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the one impurity type; ionizing impurity atoms such as can form a semiconductor layer having the type of conductivity opposite to that of the semiconductor layer of the one impurity type; accelerating the impurity ions by giving them kinetic energies; implanting the impurity ions in the semiconductor layer of the one impurity type to form an ion-implanted semiconductor layer of the other impurity type; vaporizing a metal in a vacuum region to form a vapor of said metal; bombarding the vapor of said metal with electrons to ionize at least a part thereof; accelerating the ionized vapor of said metal in an electric field to cause the vapor of said metal to impinge on the semiconductor layer of the other impurity type to form an ion-plated upper terminal electrode on at least a part of the upper surface of the semiconductor layer of the other impurity type, the upper terminal electrode being formed of a metal film such as can produce an ohmic contact with the semiconductor layer of the other impurity type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-10-16 | 1982-04-17 | 1982-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-16 | 1986-04-17 | 1986-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-16 | 1990-04-17 | 1990-10-17 | $7700.00 | Window Closed / Lapsed |