US4187124A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for doping semiconductors
Assignee: Bpifrance Financement SA
•
Filing: 1978-03-15
•
Granted: 1980-02-05
•
Expires: 1998-03-15
Abstract
Abstract A process and apparatus for doping a substrate by ion implantation or discharge. The process comprises the steps of maintaining an electric discharge in an evacuated enclosure containing a gaseous compound of a dopant for creating ions of said dopant; extracting and accelerating a beam of said ions from said atmosphere toward said substrate under a voltage selected for achieving a predetermined doping profile; and circulating said substrate transversely to said beam.
Inventors
- 👤 Jean-Claude Muller
- 👤 Jean-Pierre Ponpon
- 👤 Joseph Kurek
- 👤 Paul Siffert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 09:19
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171; C; C30; C30B; C30B31/00; C30B31/20; C30B31/22; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/21; H10P30/28; Y; Y10; Y10S; Y10S438/00; Y10S438/961
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
76 words
A process for doping a semiconductor substrate by ion implantation comprising the steps of striking an electric discharge in an atmosphere containing a gaseous compound of a dopant under a pressure between 0.1 and 10 mm of mercury for creating ions of said dopant; extracting and accelerating a beam of said ions from said atmosphere toward said substrate under a voltage selected for achieving a predetermined doping profile; and circulating said substrate transversely to said beam.
Claim 2
Dependent Claim
76 words
A process for doping a semiconductor substrate by ion implantation comprising the steps of striking an electric discharge in an atmosphere containing a gaseous compound of a dopant under a pressure between 0.1 and 10 mm of mercury for creating ions of said dopant; extracting and accelerating a beam of said ions from said atmosphere toward said substrate under a voltage selected for achieving a predetermined doping profile; and circulating said substrate transversely to said beam.
Claim 3
Dependent Claim
24 words
A process according to claim 1, wherein the ions are created by discharge in an atmosphere consisting of a halogenated compound of the dopant.
Claim 4
Dependent Claim
35 words
A process according to claim 1, wherein a gaseous compound of a N or P dopant is used for providing a Pn junction on a substrate of semiconductor material of N or P type, respectively.
Claim 5
Dependent Claim
24 words
A process according to claim 1, wherein a ohmic contact is achieved on a semiconductor substrate by implantation of a high concentration of dopant.
Claim 6
Dependent Claim
28 words
A process according to claim 1 for manufacturing photovoltaic solar cells on a ribbon or plate of silicon, the concentration of ions being close to the solubility limit.
Claim 7
Dependent Claim
29 words
A process according to claim 2, wherein an ion current is created directed towards the substrate which has an intensity between 0.1 mA/cm 2 and 1 mA/cm 2 .
Claim 8
Dependent Claim
89 words
A process for doping a semiconductor substrate by ion implantation, comprising the steps of: striking an electrical discharge in an atmosphere containing a halogeneous compound of a dopant under sub-atmospheric pressure; extracting a beam of dopant ions from said atmosphere through an ion extraction opening into an implantation chamber; accelerating said ions over a short distance from said opening by an electric field; and circulating said substrate transversely to the ion beam at a distance from said opening much higher than the distance over which said ions are accelerated.
Claim 9
Dependent Claim
89 words
A process for doping a semiconductor substrate by ion implantation, comprising the steps of: striking an electrical discharge in an atmosphere containing a halogeneous compound of a dopant under sub-atmospheric pressure; extracting a beam of dopant ions from said atmosphere through an ion extraction opening into an implantation chamber; accelerating said ions over a short distance from said opening by an electric field; and circulating said substrate transversely to the ion beam at a distance from said opening much higher than the distance over which said ions are accelerated.
Claim 10
Dependent Claim
18 words
A process according to claim 7, wherein the acceleration field is of several tens of kV per centimeter.
Claim 11
Dependent Claim
25 words
A process according to claim 7, wherein the implantation chamber is maintained under a pressure of between 10 -2 and 10 -4 mm of mercury.
Claim 12
Dependent Claim
32 words
A process according to claim 9, wherein the substrate is in ribbon form and is continuously introduced from atmosphere into said chamber and extracted from said chamber after it has been processed.
Claim 13
Dependent Claim
42 words
A process according to claim 9, further comprising the step of annealing said substrate by an electron or photon beam or by electrical heating immediately after it is extracted from said chamber and while it is circulated out of the implantation chamber.
Claim 14
Dependent Claim
32 words
A process according to claim 10, further comprising the steps of superficially cleaning said substrate by cathode or discharge sputtering in a partial vacuum while it is circulated into said implantation chamber.
References Cited (Backward Citations)
US3520741A
Cited
US3583361A
Cited
US4021675A
Cited
US3908183A
Cited
US3999072A
Cited
US4082636A
Cited
US4035655A
Cited
US4013891A
Cited
US4074139A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-02-04 | 1983-08-06 | 1984-02-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-02-04 | 1987-08-06 | 1988-02-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-02-04 | 1991-08-06 | 1992-02-05 | $7700.00 | Window Closed / Lapsed |