Patent US2780281A successfully refreshed from Google Patents.
Patent US5907768A successfully refreshed from Google Patents.
US5907768A
Expired / Lapsed
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Methods for fabricating microelectronic structures including semiconductor islands
Assignee: Kobe Steel USA Inc
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Filing: 1996-08-16
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Granted: 1999-05-25
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Expires: 2016-08-16
Abstract
Abstract A method for fabricating a microelectronic structure includes the steps of forming a semiconductor island on a substrate and forming a filler material on the substrate and surrounding the semiconductor island. The semiconductor island includes a first semiconductor material and has a planar island surface opposite the substrate. The filler material includes a second semiconductor material and has a planar single crystal surface adjacent the planar island surface opposite the substrate so that the planar island surface and the planar single crystal surface together define a smooth planar surface. The first semiconductor material can be diamond, and the second semiconductor material can be silicon. In addition, a microelectronic circuit can be formed on the filler material.
Inventors
- 👤 Dean M. Malta
- 👤 David L. Dreifus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:13
CPC Classifications
H; H04; H04R; H04R17/00; Y; Y10; Y10T; Y10T29/00; Y10T29/42
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
98 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; and forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface; wherein said first semiconductor material comprises diamond.
Claim 2
Independent Claim
98 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; and forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface; wherein said first semiconductor material comprises diamond.
Claim 3
Dependent Claim
22 words
A method according to claim 1 wherein said step of forming said semiconductor island precedes said step of forming said filler material.
Claim 4
Dependent Claim
36 words
A method according to claim 1 wherein said substrate comprises a single crystal layer adjacent said filler material and wherein said step of forming said filler material comprises epitaxially depositing said filler material on said substrate.
Claim 5
Independent Claim
132 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island comprising a semiconductor material on a substrate, said semiconductor island comprising a first semiconductor material and having an island surface opposite the substrate wherein said semiconductor island comprises diamond; forming a filler material on said substrate and surrounding said semiconductor diamond island, wherein a thickness of said filler material is greater than a thickness of said semiconductor diamond island; and removing a portion of said filler material down to a level of said island surface so that said filler material has a planar filler surface, said semiconductor diamond island has a planar island surface adjacent said planar filler surface, and said planar filler surface and said planar island surface together define a continuous planar surface.
Claim 6
Independent Claim
132 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island comprising a semiconductor material on a substrate, said semiconductor island comprising a first semiconductor material and having an island surface opposite the substrate wherein said semiconductor island comprises diamond; forming a filler material on said substrate and surrounding said semiconductor diamond island, wherein a thickness of said filler material is greater than a thickness of said semiconductor diamond island; and removing a portion of said filler material down to a level of said island surface so that said filler material has a planar filler surface, said semiconductor diamond island has a planar island surface adjacent said planar filler surface, and said planar filler surface and said planar island surface together define a continuous planar surface.
Claim 7
Dependent Claim
46 words
A method according to claim 4 wherein an interfacial surface of said semiconductor island is adjacent said substrate and a growth surface of said island is opposite said substrate and wherein said method further comprises the step of forming a piezoelectric layer on said semiconductor island.
Claim 8
Independent Claim
164 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island comprising a semiconductor material on a substrate, said semiconductor island comprising a first semiconductor material and having an island surface opposite the substrate wherein an interfacial surface of said semiconductor island is adjacent said substrate and a growth surface of said island is opposite said substrate; forming a filler material on said substrate and surrounding said semiconductor island, wherein a thickness of said filler material is greater than a thickness of said semiconductor island; removing a portion of said filler material down to a level of said island surface so that said filler material has a planar filler surface, said semiconductor island has a planar island surface adjacent said planar filler surface, and said planar filler surface and said planar island surface together define a continuous planar surface; forming a pair of interdigitated electrodes on said piezoelectric layer; and forming a piezoelectric layer on said semiconductor island.
Claim 9
Independent Claim
164 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island comprising a semiconductor material on a substrate, said semiconductor island comprising a first semiconductor material and having an island surface opposite the substrate wherein an interfacial surface of said semiconductor island is adjacent said substrate and a growth surface of said island is opposite said substrate; forming a filler material on said substrate and surrounding said semiconductor island, wherein a thickness of said filler material is greater than a thickness of said semiconductor island; removing a portion of said filler material down to a level of said island surface so that said filler material has a planar filler surface, said semiconductor island has a planar island surface adjacent said planar filler surface, and said planar filler surface and said planar island surface together define a continuous planar surface; forming a pair of interdigitated electrodes on said piezoelectric layer; and forming a piezoelectric layer on said semiconductor island.
Claim 10
Dependent Claim
25 words
A method according to claim 4 wherein said removing step comprises polishing said semiconductor island and said filler material to form said smooth planar surface.
Claim 11
Dependent Claim
23 words
A method according to claim 4 further comprising the step of forming a microelectronic circuit on said filler material adjacent said semiconductor island.
Claim 12
Independent Claim
128 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; and forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface, wherein said step of forming said filler material comprises the steps of, forming a polycrystalline layer of said second semiconductor material, and recrystallizing a surface portion of said polycrystalline layer to form said planar single crystal surface.
Claim 13
Independent Claim
128 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; and forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface, wherein said step of forming said filler material comprises the steps of, forming a polycrystalline layer of said second semiconductor material, and recrystallizing a surface portion of said polycrystalline layer to form said planar single crystal surface.
Claim 14
Independent Claim
137 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; and forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface; wherein said step of forming said filler material comprises forming a pit in said substrate so that portions of said substrate surrounding said pit define said filler material; and wherein said step of forming said semiconductor island comprises depositing said first semiconductor material in said pit.
Claim 15
Independent Claim
137 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; and forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface; wherein said step of forming said filler material comprises forming a pit in said substrate so that portions of said substrate surrounding said pit define said filler material; and wherein said step of forming said semiconductor island comprises depositing said first semiconductor material in said pit.
Claim 16
Independent Claim
130 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; and forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface; wherein a thickness of said filler material is greater than a thickness of said semiconductor island and wherein said method further comprises the step of polishing said semiconductor island and said filler material to form said smooth planar surface.
Claim 17
Independent Claim
130 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; and forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface; wherein a thickness of said filler material is greater than a thickness of said semiconductor island and wherein said method further comprises the step of polishing said semiconductor island and said filler material to form said smooth planar surface.
Claim 18
Independent Claim
53 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material; forming a filler material on said substrate and surrounding said semiconductor island; and forming a microelectronic circuit on said filler material adjacent said semiconductor island.
Claim 19
Independent Claim
53 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material; forming a filler material on said substrate and surrounding said semiconductor island; and forming a microelectronic circuit on said filler material adjacent said semiconductor island.
Claim 20
Dependent Claim
45 words
A method according to claim 12: wherein said step of forming said semiconductor island comprises selectively forming said semiconductor island on said substrate; and wherein said step of forming said filler material comprises selectively forming said filler material on said substrate adjacent said semiconductor island.
Claim 21
Dependent Claim
52 words
A method according to claim 12: wherein said step of forming said filler material comprises forming a pit in said substrate so that portions of said substrate surrounding said pit define said filler material; and wherein said step of forming said semiconductor island comprises depositing said first semiconductor material in said pit.
Claim 22
Dependent Claim
36 words
A method according to claim 12 wherein said semiconductor island has a planar island surface opposite said substrate, and wherein said filler material has a planar filler surface adjacent said planar island surface opposite said substrate.
Claim 23
Dependent Claim
49 words
A method according to claim 15 wherein said substrate comprises a single crystal layer adjacent said filler material and wherein said step of forming said filler material comprises epitaxially depositing said filler material on said substrate so that said planar filler surface comprises a planar single crystal filler surface.
Claim 24
Dependent Claim
47 words
A method according to claim 15 wherein said step of forming said filler material comprises the steps of: forming a polycrystalline layer of a second semiconductor material; and recrystallizing a surface portion of said polycrystalline layer to form a planar single crystal filler surface opposite said substrate.
Claim 25
Dependent Claim
48 words
A method according to claim 15 wherein said filler material comprises a layer of a second semiconductor material having a planar single crystal surface adjacent said planar island surface so that said planar island surface and said planar single crystal filler surface together define a continuous planar surface.
Claim 26
Dependent Claim
12 words
A method according to claim 12 wherein said semiconductor island comprises diamond.
Claim 27
Dependent Claim
46 words
A method according to claim 12 wherein an interfacial surface of said semiconductor island is adjacent said substrate and a growth surface of said island is opposite said substrate and wherein said method further comprises the step of forming a piezoelectric layer on said semiconductor island.
Claim 28
Dependent Claim
21 words
A method according to claim 20 further comprising the step of forming a pair of interdigitated electrodes on said piezoelectric layer.
Claim 29
Dependent Claim
45 words
A method according to claim 12 wherein a thickness of said filler material is greater than a thickness of said semiconductor island and wherein said method further comprises the step of polishing said semiconductor island and said filler material to form a continuous planar surface.
Claim 30
Independent Claim
86 words
A method for fabricating a piezoelectric structure, said method comprising the steps of: forming a plurality of semiconductor islands on a substrate, each of said semiconductor islands comprising a first semiconductor material wherein an interfacial surface of each of said semiconductor islands is adjacent said substrate and a growth surface of each of said islands is opposite said substrate; forming a filler material on said substrate and surrounding each of said semiconductor islands; and forming a piezoelectric layer on at least one of said semiconductor islands.
Claim 31
Independent Claim
86 words
A method for fabricating a piezoelectric structure, said method comprising the steps of: forming a plurality of semiconductor islands on a substrate, each of said semiconductor islands comprising a first semiconductor material wherein an interfacial surface of each of said semiconductor islands is adjacent said substrate and a growth surface of each of said islands is opposite said substrate; forming a filler material on said substrate and surrounding each of said semiconductor islands; and forming a piezoelectric layer on at least one of said semiconductor islands.
Claim 32
Dependent Claim
35 words
A method according to claim 23 wherein said step of forming a piezoelectric layer comprises forming a continuous piezoelectric layer across at least two of said semiconductor islands and portions of said filler material therebetween.
Claim 33
Dependent Claim
26 words
A method according to claim 23 wherein said step of forming a piezoelectric layer comprises selectively forming a piezoelectric layer on each of said semiconductor islands.
Claim 34
Dependent Claim
25 words
A method according to claim 25 further comprising the step of forming a microelectronic circuit on said filler material adjacent one of said semiconductor islands.
Claim 35
Dependent Claim
27 words
A method according to claim 23 further comprising the step of forming a pair of interdigitated electrodes on said piezoelectric layer opposite one of said semiconductor islands.
Claim 36
Dependent Claim
27 words
A method according to claim 23 further comprising the step of forming a pair of interdigitated electrodes on said piezoelectric layer adjacent one of said semiconductor islands.
Claim 37
Dependent Claim
49 words
A method according to claim 23: wherein said step of forming said plurality of semiconductor islands comprises selectively forming said plurality of semiconductor islands on said substrate; and wherein said step of forming said filler material comprises selectively forming said filler material on said substrate adjacent said semiconductor islands.
Claim 38
Dependent Claim
60 words
A method according to claim 23: wherein said step of forming said filler material comprises forming a plurality of pits in said substrate so that portions of said substrate surrounding each of said pits define said filler material; and wherein said step of forming said plurality of semiconductor islands comprises depositing said first semiconductor material in said plurality of pits.
Claim 39
Dependent Claim
55 words
A method according to claim 23 wherein each of said semiconductor islands has a planar island surface opposite said substrate, and wherein said filler material has a planar filler surface adjacent said planar island surfaces opposite said substrate so that said planar filler surface and said planar semiconductor surfaces together define a continuous planar surface.
Claim 40
Dependent Claim
49 words
A method according to claim 31 wherein said substrate comprises a single crystal layer adjacent said filler material and wherein said step of forming said filler material comprises epitaxially depositing said filler material on said substrate so that said planar filler surface comprises a planar single crystal filler surface.
Claim 41
Dependent Claim
47 words
A method according to claim 31 wherein said step of forming said filler material comprises the steps of: forming a polycrystalline layer of a second semiconductor material; and recrystallizing a surface portion of said polycrystalline layer to form a planar single crystal filler surface opposite said substrate.
Claim 42
Dependent Claim
48 words
A method according to claim 31 wherein said filler material comprises a layer of a second semiconductor material having a planar single crystal surface adjacent said planar island surfaces so that said planar island surfaces and said planar single crystal filler surface together define a continuous planar surface.
Claim 43
Dependent Claim
12 words
A method according to claim 23 wherein said semiconductor islands comprise diamond.
Claim 44
Dependent Claim
27 words
A method according to claim 23 further comprising the step of polishing said plurality of semiconductor islands and said filler material to form said smooth planar surface.
Claim 45
Independent Claim
103 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface; and forming a microelectronic circuit on said filler material adjacent said semiconductor island.
Claim 46
Independent Claim
103 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface; and forming a microelectronic circuit on said filler material adjacent said semiconductor island.
Claim 47
Independent Claim
134 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; and forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface; wherein an interfacial surface of said semiconductor island is adjacent said substrate and a growth surface of said island is opposite said substrate and wherein said method further comprises the step of forming a layer of a piezoelectric material on said semiconductor island.
Claim 48
Independent Claim
134 words
A method for fabricating a microelectronic structure, said method comprising the steps of: forming a semiconductor island on a substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite the substrate; and forming a filler material on the substrate and surrounding said semiconductor island, said filler material comprising a second semiconductor material and having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a continuous planar surface; wherein an interfacial surface of said semiconductor island is adjacent said substrate and a growth surface of said island is opposite said substrate and wherein said method further comprises the step of forming a layer of a piezoelectric material on said semiconductor island.
Claim 49
Dependent Claim
25 words
A method according to claim 38 further comprising the step of forming a pair of interdigitated electrodes on said piezoelectric layer opposite said semiconductor island.
Claim 50
Dependent Claim
36 words
A method according to claim 38 further comprising the step of forming a pair of interdigitated electrodes on said semiconductor island wherein said piezoelectric layer is formed on said interdigitated electrodes and on said semiconductor island.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-05-24 | 2002-11-23 | 2003-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-05-24 | 2006-11-23 | 2007-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-05-24 | 2010-11-23 | 2011-05-25 | $7700.00 | Window Closed / Lapsed |