Abstract Thin-film beam-lead resistors are fabricated for use in hybrid microcircuits by a sequence of steps beginning with the formation of a substrate member having an array of dielectric islands coplanar with and supported by a matrix material that is selectively etchable in the presence of the dielectric islands. A refractory dielectric layer is then deposited on the substrate to cover the islands and the surrounding coplanar matrix material. A thin-film resistance element is then deposited on each portion of the dielectric layer that covers a dielectric island. Conductive terminal pairs are then deposited in contact with spaced-apart locations on each resistance element, followed by the step of removing the matrix material, together with contiguous portions of the dielectric layer to separate the completed resistor assemblies.
A method as defined by claim 2 wherein said cavities measure 25 to 75 mils on each side at the surface of the silicon body and are etched to a depth of 5 to 15 mils.
Claim 2
Dependent Claim
15 words
A method as defined by claim 2 wherein said insulator composition is a high-temperature glass.
Claim 3
Dependent Claim
14 words
A method as defined by claim 2 wherein said dielectric layer is silicon dioxide.
Claim 4
Dependent Claim
29 words
A method as defined by claim 2 wherein said resistance element is selected from the group consisting of nickel-chromium alloys, tantalum carbide, boron silicide, tin nitride and molybdenum boride.
Claim 5
Dependent Claim
32 words
A method as defined by claim 2 wherein said terminal pairs are patterned to extend beyond the periphery of each respective insulator region, and are provided with sufficient strength to be self-supporting.
Claim 6
Independent Claim
126 words
A method for fabricating thin-film resistor assemblies comprising: a. providing a quartz or sapphire substrate with a network of channels surrounding an array of islands having coplanar surfaces; b. placing a filler material on the channel network; c. smoothing the resulting surfaces to coplanarize the filler material with the island surfaces; d. depositing a refractory dielectric layer on the coplanarized surfaces; e. depositing a thin-film resistance element on each portion of the dielectric layer which covers a substrate island; f. depositing conductive terminal pairs in contact with spaced-apart locations on each resistance element; g. removing sufficient substrate from the reverse side thereof to expose said filler material; and h. removing said filler and the contiguous portions of said dielectric layer to separate the completed resistor assemblies.