Photoelectric converter

Claim 1

A method for producing photoelectric conversion apparatus comprising a light transmissive substrate, a semiconductor region provided on said substrate, and a wiring portion provided on said semiconductor region, and capable of outputting a signal responsive to light incident from said substrate side, comprising steps of: (a) preparing a light transmissive substrate having an amorphous deposition surface of a different material than said substrate, said amorphous deposition surface having a nucleation density greater than any other surface on the substrate and having a sufficiently small area so as to form thereon only a single nucleus from which a single crystal is grown, the area size being of the order of a few um; forming the single nucleus on the amorphous deposition surface; (c) growing the single crystal from the nucleus by vapor deposition; (d) forming on said substrate a transistor having a main electrode region of a first conductivity type and a control electrode region of a conductivity type opposite to the first type; and (e) forming on said substrate a wiring portion connected to the transistor.

Claim 2

A method for producing photoelectric conversion apparatus comprising a light transmissive substrate, a semiconductor region provided on said substrate, and a wiring portion provided on said semiconductor region, and capable of outputting a signal responsive to light incident from said substrate side, comprising steps of: (a) preparing a light transmissive substrate having an amorphous deposition surface of a different material than said substrate, said amorphous deposition surface having a nucleation density greater than any other surface on the substrate and having a sufficiently small area so as to form thereon only a single nucleus from which a single crystal is grown, the area size being of the order of a few um; forming the single nucleus on the amorphous deposition surface; (c) growing the single crystal from the nucleus by vapor deposition; (d) forming on said substrate a transistor having a main electrode region of a first conductivity type and a control electrode region of a conductivity type opposite to the first type; and (e) forming on said substrate a wiring portion connected to the transistor.

Claim 6

A method for producing a photoelectric conversion apparatus, comprising the steps of: forming a light transmissive substrate having a deposition surface and a bottom surface, the substrate having a first nucleation density, and said bottom surface receiving light and passing it through the substrate; forming an amorphous heterogeneous deposition surface on said substrate deposition surface, said amorphous heterogeneous deposition surface having a second nucleation density higher then said first nucleation density, said amorphous heterogeneous deposition surface having an area dimensioned to permit growth of a single nucleus of a single crystal material; forming a photoelectric conversion region of said single crystal material gown on said amorphous heterogeneous deposition surface, said region receiving light passed through said substrate bottom surface; and forming in and on said single crystal material a photoresponsive transistor including said region, said transistor including wiring disposed on a top of said region on a surface opposite a surface which receives light, said transistor also including (1) a main electrode region of a first conductivity type, (2) a controlled electrode region of a second conductivity type floating to store photoexcited carriers therein, and (3) a junction formed between said main and control electrode regions and capable of being forward biased to output a signal corresponding to the stored carriers.

Claim 7

A method for producing a photoelectric conversion apparatus, comprising the steps of: forming a light transmissive substrate having a deposition surface and a bottom surface, the substrate having a first nucleation density, and said bottom surface receiving light and passing it through the substrate; forming an amorphous heterogeneous deposition surface on said substrate deposition surface, said amorphous heterogeneous deposition surface having a second nucleation density higher then said first nucleation density, said amorphous heterogeneous deposition surface having an area dimensioned to permit growth of a single nucleus of a single crystal material; forming a photoelectric conversion region of said single crystal material gown on said amorphous heterogeneous deposition surface, said region receiving light passed through said substrate bottom surface; and forming in and on said single crystal material a photoresponsive transistor including said region, said transistor including wiring disposed on a top of said region on a surface opposite a surface which receives light, said transistor also including (1) a main electrode region of a first conductivity type, (2) a controlled electrode region of a second conductivity type floating to store photoexcited carriers therein, and (3) a junction formed between said main and control electrode regions and capable of being forward biased to output a signal corresponding to the stored carriers.