Method for making semiconductor structure

Claim 2

In a method for forming a semiconductor structure utilizing a semiconductor body, forming an insulating layer on the semiconductor body, forming a support structure upon the insulating layer, forming a grid structure of insulating material in the semiconductor body, depositing a support structure upon the grid structure, and removing the first named support structure to provide a planar surface, the grid structure serving to enclose islands of the semiconductor body which are isolated from each other and from the support structure.

Claim 3

In a method for forming a semiconductor structure, providing a semiconductor body having a surface, forming a layer of insulating material on the semiconductor body and overlying said surface prior to the formation of a semiconductor device in the semiconductor body, selectively removing portions of the layer of insulating material in accordance with a predetermined pattern to provide openings in the layer of insulating material to expose portions of the surface of the semiconductor body, removing portions of the body exposed through said openings in said layer of insulating material to form troughs in said body, forming a layer of insulating material in said troughs to a depth which is insufficient to fill said troughs, forming a support structure directly on said layers of insulating material, and forming an additional support structure adherent to the body on a side opposite said surface prior to selectively removing said insulating layer removing the last named support structure.

Claim 4

In a method for forming a semiconductor structure, providing a semiconductor body having a surface, forming a layer of insulating material on the semiconductor body and overlying said surface prior to the formation of a semiconductor device in the semiconductor body, selectively removing portions of the layer of insulating material in accordance with a predetermined pattern to provide openings in the layer of insulating material to expose portions of the surface of the semiconductor body, removing portions of the body exposed through said openings in said layer of insulating material to form troughs in said body, forming a layer of insulating material in said troughs to a depth which is insufficient to fill said troughs, forming a support structure directly on said layers of insulating material, and forming an additional support structure adherent to the body on a side opposite said surface prior to selectively removing said insulating layer removing the last named support structure.

Claim 5

In a method forming a semiconductor structure utilizing a semiconductor body, forming an insulating layer on the semiconductor body, forming a recess in said insulating layer and in said body and extending in to said body to a predetermined depth, depositing a layer of a material harder than said semiconductor body in said recess to form stops, forming a support structure upon the insulating layer and upon the stops, removing a substantial portion of the semiconductor body until the stops are encountered to provide a semiconductor body having a controlled uniform depth, forming troughs in the semiconductor body to provide islands formed of the semiconductor body, enclosing the islands within a layer of the insulating material, forming an additional support structure upon the last named layer of insulating material on the isolated islands, and removing the first named support structure to provide a planar surface adjacent said islands.

Claim 6

In a method forming a semiconductor structure utilizing a semiconductor body, forming an insulating layer on the semiconductor body, forming a recess in said insulating layer and in said body and extending in to said body to a predetermined depth, depositing a layer of a material harder than said semiconductor body in said recess to form stops, forming a support structure upon the insulating layer and upon the stops, removing a substantial portion of the semiconductor body until the stops are encountered to provide a semiconductor body having a controlled uniform depth, forming troughs in the semiconductor body to provide islands formed of the semiconductor body, enclosing the islands within a layer of the insulating material, forming an additional support structure upon the last named layer of insulating material on the isolated islands, and removing the first named support structure to provide a planar surface adjacent said islands.

Claim 7

In a method for forming a semiconductor structure utilizing a semiconductor body, forming an insulating layer on the semiconductor body, forming a support structure on the insulating layer, removing portions of the semiconductor body to provide a semiconductor body having a controlled uniform depth, forming troughs in the semiconductor body to provide islands of the semiconductor body, forming an insulating layer over the isolated islands, forming an additional support structure upon the last named insulating layer over the islands, and removing the first named support structure to provide a planar surface adjacent the islands.

Claim 8

In a method for forming a semiconductor structure utilizing a semiconductor body, forming an insulating layer on the semiconductor body, forming a support structure on the insulating layer, removing portions of the semiconductor body to provide a semiconductor body having a controlled uniform depth, forming troughs in the semiconductor body to provide islands of the semiconductor body, forming an insulating layer over the isolated islands, forming an additional support structure upon the last named insulating layer over the islands, and removing the first named support structure to provide a planar surface adjacent the islands.

Claim 9

A process for forming a composite semiconductor body having a plurality of semiconductor regions separated by insulation comprising: forming a first layer of monocrystalline semiconductor material of a first conductivity type having an upper and a lower surface; forming a substantially planar second layer adjacent and adherent to the upper surface of said first layer, said second layer comprising a material that protects said upper surface from unwanted contamination, the step of forming said second layer comprising oxidation; forming a third layer of supporting material adjacent and adherent to the exposed portion of said second layer, said third layer capable of being removed by a substance that will not affect said second layer, the step of forming said third layer comprising growing a layer of polycrystalline semiconductor material upon said second layer; selectively removing portions of said first layer from the lower surface thereof, the removed portions extending through to said second layer, the step of selectively removing portions of said first layer comprising mesa etching with a substance that is non-reactive with said second layer; forming a fourth layer of insulating material along the lower surface of said first layer including said removed portions, whereby semiconductor regions separated by electrical insulation are formed; and forming a fifth layer of supporting material adjacent and adherent to the exposed portion of said fourth layer removing said third layer with said substance.

Claim 10

A process for forming a composite semiconductor body having a plurality of semiconductor regions separated by insulation comprising: forming a first layer of monocrystalline semiconductor material of a first conductivity type having an upper and a lower surface; forming a substantially planar second layer adjacent and adherent to the upper surface of said first layer, said second layer comprising a material that protects said upper surface from unwanted contamination, the step of forming said second layer comprising oxidation; forming a third layer of supporting material adjacent and adherent to the exposed portion of said second layer, said third layer capable of being removed by a substance that will not affect said second layer, the step of forming said third layer comprising growing a layer of polycrystalline semiconductor material upon said second layer; selectively removing portions of said first layer from the lower surface thereof, the removed portions extending through to said second layer, the step of selectively removing portions of said first layer comprising mesa etching with a substance that is non-reactive with said second layer; forming a fourth layer of insulating material along the lower surface of said first layer including said removed portions, whereby semiconductor regions separated by electrical insulation are formed; and forming a fifth layer of supporting material adjacent and adherent to the exposed portion of said fourth layer removing said third layer with said substance.

Claim 11

The process recited in claim 5 wherein said last named step comprises growing a layer of polycrystalline semiconductor material upon said fourth layer.

Claim 12

In a method for forming a semiconductor structure, providing a semiconductor body having first and second surfaces, forming an insulating layer on the first surface on the semiconductor body, forming a support structure on the insulating layer, forming recesses in the semiconductor body extending from said second surface to the first surface to form islands in the semiconductor body, forming an insulating layer in the recesses and over the islands, forming an additional support structure upon the last named insulating layer and removing the first named support structure.

Claim 13

In a method for forming a semiconductor structure, providing a semiconductor body having first and second surfaces, forming an insulating layer on the first surface on the semiconductor body, forming a support structure on the insulating layer, forming recesses in the semiconductor body extending from said second surface to the first surface to form islands in the semiconductor body, forming an insulating layer in the recesses and over the islands, forming an additional support structure upon the last named insulating layer and removing the first named support structure.

Claim 14

A method as in claim 7, together with the step of forming devices in said islands.

Claim 15

In a method of preparing a semiconductor device structure suitable in making an integrated circuit, the steps comprising: obtaining a unitary semiconductor body; forming a first layer of insulating material on a surface of said body; forming a first support member to vapor deposited semiconductor material on said first layer of insulating material; separating said unitary semiconductor body into a plurality of isolated bodies by completely removing selected portions of the semiconductor body to expose the first layer of insulating material, said isolated bodies being disposed on said first support member; forming a secnd layer of insulating material on the exposed surfaces of said isolated bodies and the exposed portions of said first layer of insulating material; forming a second support member of vapor deposited semiconductor material on said second layer of insulating material; and removing said first support member and all of the first layer of insulating material.

Claim 16

In a method of preparing a semiconductor device structure suitable in making an integrated circuit, the steps comprising: obtaining a unitary semiconductor body; forming a first layer of insulating material on a surface of said body; forming a first support member to vapor deposited semiconductor material on said first layer of insulating material; separating said unitary semiconductor body into a plurality of isolated bodies by completely removing selected portions of the semiconductor body to expose the first layer of insulating material, said isolated bodies being disposed on said first support member; forming a secnd layer of insulating material on the exposed surfaces of said isolated bodies and the exposed portions of said first layer of insulating material; forming a second support member of vapor deposited semiconductor material on said second layer of insulating material; and removing said first support member and all of the first layer of insulating material.

Claim 17

In a method as defined in claim 9, the additional step comprising: forming at least one electronic element in each of said isolated portions.

Claim 18

A method as defined in claim 9 wherein: said unitary semiconductor body is of monocrystalline silicon; said first and second layers of insulating material comprise deposited silicon dioxide; said separating of said unitary body and said removing of said first support member are performed by attacking said semiconductor body and said first support number with an etchant that attacks said semiconductor body and said first support member at a rate greater than it attacks said insulating material; said first and second support members are of polycrystalline silicon deposited from a vapor.