US5272104A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bonded wafer process incorporating diamond insulator
Assignee: Intersil Corp
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Filing: 1993-03-11
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Granted: 1993-12-21
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Expires: 2013-03-11
Abstract
Abstract A semiconductor-on-insulator structure incorporating a layer of diamond material and method for preparing such. The structure comprises a layer containing diamond material and having a first surface. A layer of silicon nitride is formed on the first surface and a layer of semiconductor material is positioned over the silicon nitride layer. In one embodiment of the method there is provided a removable deposition surface. A layer of crystalline diamond material is formed on the deposition surface. A first surface of the diamond material is separated from the deposition surface. The structure is useful for formation of integrated circuits thereon.
Inventors
- 👤 Gregory A. Schrantz
- 👤 Jack H. Linn
- 👤 Richard W. Belcher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:08
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W10/061; H10W10/10; H10W10/17; H10W10/181; H10W40/00; H10W40/20; H10W40/25; H10W40/254; H10P90/1914; H10W10/041; H10W10/40; H10W72/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; H10W72/30; H10W72/351; H10W72/352; H10W72/353; H10W72/354; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135; Y10S438/00; Y10S438/973
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
98 words
A method for preparing a semiconductor-on-insulator structure comprising the steps of: a. providing a removable deposition surface and forming a layer of crystalline diamond material thereon, the layer including first and second opposing surfaces with the first surface in contact with the deposition surface; b. separating the first surface of the diamond layer from the deposition surface; c. providing a wafer structure having first and second opposing surfaces, said structure including a semiconductor layer along the first surface; and d. forming a bond between one of the diamond layer surfaces and the second surface of the wafer structure.
Claim 2
Independent Claim
98 words
A method for preparing a semiconductor-on-insulator structure comprising the steps of: a. providing a removable deposition surface and forming a layer of crystalline diamond material thereon, the layer including first and second opposing surfaces with the first surface in contact with the deposition surface; b. separating the first surface of the diamond layer from the deposition surface; c. providing a wafer structure having first and second opposing surfaces, said structure including a semiconductor layer along the first surface; and d. forming a bond between one of the diamond layer surfaces and the second surface of the wafer structure.
Claim 3
Dependent Claim
29 words
The method of claim 1 wherein the diamond layer is separated from the deposition surface before forming the bond between the one diamond layer surface and the wafer structure.
Claim 4
Dependent Claim
37 words
The method of claim 1 wherein the semiconductor layer comprises silicon and bond formation is effected by: depositing silicon on the first diamond surface; and placing the second surface of the wafer structure against the deposited silicon.
Claim 5
Dependent Claim
57 words
The method of claim 1 wherein bond formation is effected by: depositing a layer of silicon on the first diamond surface; depositing a metal layer over the silicon layer; placing the wafer structure against the metal layer; and reacting to form a metal silicide bond between the diamond layer and the semiconductor layer of the wafer structure.
Claim 6
Dependent Claim
35 words
The method of claim 1 wherein the step of forming the bond includes: forming a layer of silicon nitride on the first diamond surface; and forming a layer of silicon over the silicon nitride layer.
Claim 7
Dependent Claim
31 words
The method of claim 5 further including: forming a metal layer over the layer of silicon; positioning the wafer structure against the metal layer; and heating to form a silicide bond.
Claim 8
Dependent Claim
23 words
The method of claim 1 wherein the bond is formed between the first diamond surface and the semiconductor layer of the wafer structure.
Claim 9
Independent Claim
58 words
A method of forming a semiconductor-on-insulator structure comprising the steps of: providing a diamond layer having first and second surfaces; forming a silicon nitride layer on one of the diamond layer surfaces; and bonding a layer comprising monocrystalline semiconductor material to the diamond layer with the silicon nitride layer positioned between the diamond layer and the semiconductor material.
Claim 10
Independent Claim
58 words
A method of forming a semiconductor-on-insulator structure comprising the steps of: providing a diamond layer having first and second surfaces; forming a silicon nitride layer on one of the diamond layer surfaces; and bonding a layer comprising monocrystalline semiconductor material to the diamond layer with the silicon nitride layer positioned between the diamond layer and the semiconductor material.
Claim 11
Dependent Claim
26 words
The method of claim 8 wherein the step of bonding includes: depositing a layer of silicon on the silicon nitride layer; and reacting the deposited silicon.
Claim 12
Dependent Claim
33 words
The method of claim 9 wherein the step of bonding further includes depositing a metal layer over the deposited silicon; and the reaction forms a silicide bond with the layer comprising semiconductor material.
Claim 13
Dependent Claim
22 words
The method of claim 9 wherein a silicon dioxide bond is formed between the deposited silicon and the layer comprising semiconductor material.
Claim 14
Dependent Claim
38 words
The method of claim 8 further including: forming a plurality of trenches extending from an upper surface of the semiconductor material to expose the silicon nitride layer, said trenches defining electrically isolated semiconductor islands suitable for device formation.
Claim 15
Dependent Claim
13 words
The method of claim 8 wherein the monocrystalline semiconductor material is predominantly silicon.
Claim 16
Independent Claim
60 words
A method of forming a semiconductor-on-insulator structure comprising the steps of: providing a diamond layer having first and second surfaces; bonding a first layer comprising monocrystalline semiconductor material to one of the diamond layer surfaces; forming trenches extending from an upper surface of the semiconductor layer to expose the diamond layer; and depositing silicon nitride over the exposed diamond layer.
Claim 17
Independent Claim
60 words
A method of forming a semiconductor-on-insulator structure comprising the steps of: providing a diamond layer having first and second surfaces; bonding a first layer comprising monocrystalline semiconductor material to one of the diamond layer surfaces; forming trenches extending from an upper surface of the semiconductor layer to expose the diamond layer; and depositing silicon nitride over the exposed diamond layer.
Claim 18
Dependent Claim
40 words
The method of claim 14 wherein said first layer comprising semiconductor material is bonded to the diamond layer by depositing silicon over the diamond layer and forming a silicon dioxide bond between said first layer and the deposited silicon layer.
Claim 19
Dependent Claim
24 words
The method of claim 14 wherein the step of bonding includes formation of a metallic silicide between said first layer and the diamond layer.
Claim 20
Dependent Claim
23 words
The method of claim 14 wherein said first layer predominantly comprises a monocrystalline silicon lattice structure with trenches formed along 1,1,1 planes thereof.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-20 | 1997-06-21 | 1997-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-20 | 2001-06-21 | 2001-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-20 | 2005-06-21 | 2005-12-21 | $7700.00 | Window Closed / Lapsed |