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US5131963A
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Silicon on insulator semiconductor composition containing thin synthetic diamone films
Assignee: Advanced Refractory Technologies Inc
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Filing: 1988-08-26
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Granted: 1992-07-21
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Expires: 2008-08-26
Abstract
Abstract A process is provided for making a semiconductor element comprising a single-crystal layer of silicon on a diamond insulator.
Inventors
- 👤 Kramadhati V. Ravi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:02
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2903; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3206; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; H10P50/00; H10P50/60; H10P50/64; H10P50/642; Y; Y10; Y10S; Y10S148/00; Y10S148/135
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
28 words
A semiconductor element consisting of a semiconductor material supported by a polysilicon substrate, wherein an insulating diamond layer is disposed between said semiconducting material and said polysilicon substrate.
Claim 2
Dependent Claim
28 words
A semiconductor element consisting of a semiconductor material supported by a polysilicon substrate, wherein an insulating diamond layer is disposed between said semiconducting material and said polysilicon substrate.
Claim 3
Dependent Claim
30 words
A multilayer semiconductor electronic component consisting of, in order, a substrate, an insulating diamond layer, a silicon layer and a layer comprising islands of semiconductor material separated by diamond insulation.
Claim 4
Dependent Claim
30 words
A multilayer semiconductor electronic component consisting of, in order, a substrate, an insulating diamond layer, a silicon layer and a layer comprising islands of semiconductor material separated by diamond insulation.
Claim 5
Dependent Claim
13 words
A semiconductor electronic component according to claim 2 wherein said substrate comprises polysilicon.
Claim 6
Dependent Claim
15 words
A semiconductor electronic component according to claim 2 wherein said semiconductor material comprises gallium arsenide.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-21 | 1996-01-20 | 1996-07-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-21 | 2000-01-20 | 2000-07-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-21 | 2004-01-20 | 2004-07-21 | $7700.00 | Window Closed / Lapsed |