US4939043A
Expired / Lapsed
US
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Optically transparent electrically conductive semiconductor windows
Assignee: Northrop Grumman Corp
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Filing: 1988-10-14
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Granted: 1990-07-03
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Expires: 2008-10-14
Abstract
Abstract A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed of a substrate material having a semiconductor coating having a dopant included therein. The coating is diffused, grown or deposited on one surface of the substrate and is controlled to obtain both low electrical resistivity and high infrared transmissivity. The coating can be formed of the same material as the substrate or can be a different material. Windows having particular thermal properties are formed utilizing zinc selenide and zinc sulfide as the substrate.
Inventors
- 👤 V. Warren Biricik
- 👤 James M. Rowe
- 👤 Paul Kraatz
- 👤 John W. Tully
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:33
CPC Classifications
G; G02; G02B; G02B1/00; G02B1/10; G02B1/02; G02B1/14; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/1266; Y10T428/12674; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
132 words
A conductive window transparent to infrared radiation comprising a substrate made of material selected from the group consisting of zinc sulfide and zinc selenide and formed in a manner to be transparent to infrared radiation, a thin coating of semiconductor material deposited on the surface of said substrate in a manner to be transparent to infrared radiation, a dopant contained in said semiconductor coating, said dopant being selected to thereby form with said coating a semiconductor having significant carrier concentration of donors or acceptors, said dopant thereby causing said coating to exhibit conductivity with a sheet resistance of less than about 30 ohms per square, and the thickness of the semiconductor coating and the concentration of the dopant being adjusted to cause said coating to remain substantially transparent while exhibiting said conductivity.
Claim 2
Dependent Claim
132 words
A conductive window transparent to infrared radiation comprising a substrate made of material selected from the group consisting of zinc sulfide and zinc selenide and formed in a manner to be transparent to infrared radiation, a thin coating of semiconductor material deposited on the surface of said substrate in a manner to be transparent to infrared radiation, a dopant contained in said semiconductor coating, said dopant being selected to thereby form with said coating a semiconductor having significant carrier concentration of donors or acceptors, said dopant thereby causing said coating to exhibit conductivity with a sheet resistance of less than about 30 ohms per square, and the thickness of the semiconductor coating and the concentration of the dopant being adjusted to cause said coating to remain substantially transparent while exhibiting said conductivity.
Claim 3
Dependent Claim
34 words
A transparent, conductive window of claim 1 wherein: said semiconductor coating is selected from the group consisting of gallium arsenide, silicon, germanium, zinc sulfide, zinc selenide, zinc oxide, semiconducting diamond and semiconducting silicon carbide.
Claim 4
Dependent Claim
23 words
A transparent, conductive window of claim 1 wherein: said semiconductor coating is of a thickness of about 2 microns to about 25 microns.
Claim 5
Dependent Claim
30 words
A transparent, conductive window of claim 1 wherein: said window is transparent to electromagnetic radiation of wavelengths selected from the range of from about 0.4 microns to about 12 microns.
Claim 6
Dependent Claim
29 words
A transparent, conductive window of claim 1 wherein: said window is transparent to electromagnetic radiation of wavelengths selected from the range of about 2 microns to about 12 microns.
Claim 7
Dependent Claim
23 words
A transparent, conductive window of claim 1 wherein the sheet resistance of said semiconductor coating is less than about 10 ohms per square.
Claim 8
Dependent Claim
47 words
A transparent, conductive window of claim 1 wherein: said semiconductor coating and said substrate of the same material or of a different material with the proviso that when said substrate is a semiconductor material said resistivity of said semiconductor substrate is greater than 10 ohms per square.
Claim 9
Dependent Claim
80 words
An infrared, transparent, conductive window comprising an infrared, transparent substrate selected from the group consisting of zinc sulfide and zinc selenide, an infrared, transparent semiconductor coating deposited on a surface of said substrate, said semiconductor coating is selected from the group consisting of germanium and silicon, a dopant in said semiconductor coating for rendering said semiconductor coating conductive, and said dopant being selected from the group consisting of lithium, phosphorus, arsenic, antimony, bismuth, boron, aluminum, gallium, indium, zinc and thallium.
Claim 10
Dependent Claim
80 words
An infrared, transparent, conductive window comprising an infrared, transparent substrate selected from the group consisting of zinc sulfide and zinc selenide, an infrared, transparent semiconductor coating deposited on a surface of said substrate, said semiconductor coating is selected from the group consisting of germanium and silicon, a dopant in said semiconductor coating for rendering said semiconductor coating conductive, and said dopant being selected from the group consisting of lithium, phosphorus, arsenic, antimony, bismuth, boron, aluminum, gallium, indium, zinc and thallium.
Claim 11
Dependent Claim
71 words
An infrared, transparent, conductive window comprising: an infrared, transparent substrate selected from the group consisting of zinc sulfide and zinc selenide, an infrared, transparent semiconductor coating of gallium arsenide deposited on a surface of said substrate, a dopant in said semiconductor coating for rendering said semiconductor coating conductive, and said dopant being selected from the group consisting of sulfur, selenium, tin, tellurium, germanium, silicon, magnesium, lithium, zinc, manganese, cadmium and beryllium.
Claim 12
Dependent Claim
71 words
An infrared, transparent, conductive window comprising: an infrared, transparent substrate selected from the group consisting of zinc sulfide and zinc selenide, an infrared, transparent semiconductor coating of gallium arsenide deposited on a surface of said substrate, a dopant in said semiconductor coating for rendering said semiconductor coating conductive, and said dopant being selected from the group consisting of sulfur, selenium, tin, tellurium, germanium, silicon, magnesium, lithium, zinc, manganese, cadmium and beryllium.
Claim 13
Dependent Claim
136 words
A conductive window transparent to infrared radiation comprising a substrate made of material selected from the group consisting of zinc sulfide, zinc selenide, sapphire, spinel and aluminum oxy nitride, said substrate being made to be transparent to infrared radiation, a thin coating of semiconductor material deposited on the surface of said substrate in a manner to be transparent to infrared radiation, a dopant contained in said semiconductor coating said dopant being selected to thereby form with said coating a semiconductor having significant carrier concentration of donors or acceptors, said dopant thereby causing said coating to exhibit conductivity with a sheet resistance of less than about 30 ohms per square, and the thickness of the semiconductor coating and the concentration of the dopant being adjusted to cause said coating to remain substantially transparent while exhibiting said conductivity.
Claim 14
Dependent Claim
136 words
A conductive window transparent to infrared radiation comprising a substrate made of material selected from the group consisting of zinc sulfide, zinc selenide, sapphire, spinel and aluminum oxy nitride, said substrate being made to be transparent to infrared radiation, a thin coating of semiconductor material deposited on the surface of said substrate in a manner to be transparent to infrared radiation, a dopant contained in said semiconductor coating said dopant being selected to thereby form with said coating a semiconductor having significant carrier concentration of donors or acceptors, said dopant thereby causing said coating to exhibit conductivity with a sheet resistance of less than about 30 ohms per square, and the thickness of the semiconductor coating and the concentration of the dopant being adjusted to cause said coating to remain substantially transparent while exhibiting said conductivity.
Claim 15
Dependent Claim
146 words
A conductive window transparent to infrared radiation comprising a substrate made of material selected from the group consisting of zinc sulfide and zinc selenide and formed in a manner to be transparent to infrared radiation, a thin coating of semiconductor material deposited on the surface of said substrate in a manner to be transparent to infrared radiation, said semiconductor coating selected from the group consisting of gallium arsenide, silicon, and germanium, a dopant contained in said semiconductor coating said dopant being selected to thereby form with said coating a semiconductor having significant carrier concentration of donors or acceptors, said dopant thereby causing said coating to exhibit conductivity with a sheet resistance of less than about 30 ohms per square, and the thickness of the semiconductor coating and the concentration of the dopant being adjusted to cause said coating to remain substantially transparent while exhibiting said conductivity.
Claim 16
Dependent Claim
146 words
A conductive window transparent to infrared radiation comprising a substrate made of material selected from the group consisting of zinc sulfide and zinc selenide and formed in a manner to be transparent to infrared radiation, a thin coating of semiconductor material deposited on the surface of said substrate in a manner to be transparent to infrared radiation, said semiconductor coating selected from the group consisting of gallium arsenide, silicon, and germanium, a dopant contained in said semiconductor coating said dopant being selected to thereby form with said coating a semiconductor having significant carrier concentration of donors or acceptors, said dopant thereby causing said coating to exhibit conductivity with a sheet resistance of less than about 30 ohms per square, and the thickness of the semiconductor coating and the concentration of the dopant being adjusted to cause said coating to remain substantially transparent while exhibiting said conductivity.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-07-02 | 1994-01-01 | 1994-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-02 | 1998-01-01 | 1998-07-03 | $3760.00 | Window Closed / Lapsed |
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