US4863529A
Expired / Lapsed
US
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Thin film single crystal diamond substrate
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1988-03-08
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Granted: 1989-09-05
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Expires: 2008-03-08
Abstract
Abstract A thin film single crystal diamond substrate which comprises a base substrate selected from the group consisting of a single crystal silicon substrate and a single crystal GaAs substrate, an intermediate layer consisting of single crystal silicon carbide formed on the base substrate and a thin film of single crystal diamond which is epitaxially grown on the intermediate layer, which can have a large area and be easily and economically produced.
Inventors
- 👤 Takahiro Imai
- 👤 Naoji Fujimori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:54
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B29/00; C30B29/02; C30B29/04; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3208; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3406; H10P14/3438; H10P14/3441; H10P14/3444; Y; Y10; Y10S; Y10S148/00; Y10S148/148
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
59 words
A thin film single crystal diamond substrate which comprises a base substrate selected from the group consisting of a single crystal silicon substrate and a single crystal GaAs substrate, an intermediate layer consisting of single crystal silicon carbide formed on the base substrate and a thin film of single crystal diamond which is epitaxially grown on the intermediate layer.
Claim 2
Dependent Claim
59 words
A thin film single crystal diamond substrate which comprises a base substrate selected from the group consisting of a single crystal silicon substrate and a single crystal GaAs substrate, an intermediate layer consisting of single crystal silicon carbide formed on the base substrate and a thin film of single crystal diamond which is epitaxially grown on the intermediate layer.
Claim 3
Dependent Claim
18 words
The thin film single crystal diamond substrate according to claim 1, wherein the diamond is doped with boron.
Claim 4
Dependent Claim
21 words
The thin film single crystal diamond substrate according to claim 1, wherein the base substrate is the single crystal silicon substrate.
Claim 5
Dependent Claim
21 words
The thin film single crystal diamond substrate according to claim 1, wherein the base substrate is the single crystal GaAs substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-04 | 1993-03-06 | 1993-09-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-04 | 1997-03-06 | 1997-09-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-04 | 2001-03-06 | 2001-09-05 | $7700.00 | Window Closed / Lapsed |