US5686760A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Eutectic Cu-alloy wiring structure in a semiconductor device
Assignee: NEC Electronics Corp
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Filing: 1995-11-16
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Granted: 1997-11-11
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Expires: 2015-11-16
Abstract
Abstract In a semiconductor device having a wiring groove in alignment with a contact hole, a wiring structure includes a diffusion preventing film formed on the bottom and side walls of the wiring groove, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu and an element which cooperates with Cu so as to form a eutectic Cu-alloy having a eutectic temperature of not higher than 850° C. A Cu film is formed on the diffusion preventing film so as to fill up the wiring groove, so that Cu and the above mentioned element actually form the eutectic Cu-alloy having the eutectic temperature of not higher than 850° C.
Inventors
- 👤 Kuniko Miyakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 01:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/056; H10W20/059; H10W20/40; H10W20/41; H10W20/42; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
89 words
A wiring structure in a semiconductor device having a connection hole in alignment with another connection hole, the wiring structure including a diffusion preventing film formed on the bottom and side walls of each said hole, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu and an element which cooperates with Cu so as to form an alloy having an eutectic temperature of not higher than 850° C., and a Cu film formed on the diffusion preventing film and filling each said hole.
Claim 2
Dependent Claim
89 words
A wiring structure in a semiconductor device having a connection hole in alignment with another connection hole, the wiring structure including a diffusion preventing film formed on the bottom and side walls of each said hole, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu and an element which cooperates with Cu so as to form an alloy having an eutectic temperature of not higher than 850° C., and a Cu film formed on the diffusion preventing film and filling each said hole.
Claim 3
Dependent Claim
24 words
A wiring structure claimed in claim 1 wherein the alloy of Cu and said element has an electric resistivity lower than that of Al.
Claim 4
Dependent Claim
29 words
A wiring structure claimed in claim 2 wherein said element is one selected from the group consisting of antimony (Sb), silicon (Si), germanium (Ge), magnesium (Mg), and phosphorus (P).
Claim 5
Dependent Claim
33 words
A wiring structure claimed in claim 3 wherein said element contained in said diffusion preventing film is in a composition range of 0.1 weight percent to 15 weight percent to said barrier metal.
Claim 6
Dependent Claim
28 words
A wiring structure claimed in claim 4 wherein said barrier metal is one selected from the group consisting of tantalum (Ta), niobium (Nb), vanadium (V) and tungsten (W).
Claim 7
Dependent Claim
108 words
A wiring structure in a semiconductor device having a via hole and a wiring groove in alignment with the via hole, the wiring structure including a diffusion preventing film formed on the bottom and side walls of the via hole and on the bottom and side walls of the wiring groove, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu, and a Cu-alloy film formed on the diffusion preventing film and filling the via hole and the wiring groove, the Cu-alloy film being composed of Cu and another element which form an alloy having an eutectic temperature not higher than 850° C.
Claim 8
Dependent Claim
108 words
A wiring structure in a semiconductor device having a via hole and a wiring groove in alignment with the via hole, the wiring structure including a diffusion preventing film formed on the bottom and side walls of the via hole and on the bottom and side walls of the wiring groove, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu, and a Cu-alloy film formed on the diffusion preventing film and filling the via hole and the wiring groove, the Cu-alloy film being composed of Cu and another element which form an alloy having an eutectic temperature not higher than 850° C.
Claim 9
Dependent Claim
24 words
A wiring structure claimed in claim 6 wherein the alloy of Cu and said element has an electric resistivity lower than that of Al.
Claim 10
Dependent Claim
29 words
A wiring structure claimed in claim 7 wherein said element is one selected from the group consisting of antimony (Sb), silicon (Si), germanium (Ge), magnesium (Mg) and phosphorus (P).
Claim 11
Dependent Claim
28 words
A wiring structure claimed in claim 8 wherein said barrier metal is one selected from the group consisting of tantalum (Ta), niobium (Nb), vanadium (V) and tungsten (W).
References Cited (Backward Citations)
US4843453A
Cited
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