← Back to Patent Explorer
US5329208A Expired / Lapsed US ⏱️ 0.0 years remaining

Surface acoustic wave device and method for producing the same

Assignee: Seiko Epson Corp
•
Filing: 1992-06-05
•
Granted: 1994-07-12
•
Expires: 2012-06-05
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A surface acoustic wave device having a diamond layer, a piezoelectric layer and a comb-like electrode, in which the piezoelectric layer and the comb-like electrode are formed on a surface of the diamond layer, which surface has been contacted to a substrate used in the formation of the diamond layer by a vapor phase growth method, which device has high stability and can be produced economically.

Inventors

  • 👤 Takahiro Imai
  • 👤 Hideaki Nakahata
  • 👤 Akihiro Hachigo
  • 👤 Naoji Fujimori

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 07:56
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/02535; H03H9/02543; H03H9/02582; H03H9/02614; H03H9/02622; Y; Y10; Y10T; Y10T29/00; Y10T29/42

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 69 words
A surface acoustic wave device comprising a diamond layer, a piezoelectric layer and a comb-like electrode, wherein said piezoelectric layer and said comb-like electrode are formed on a surface of said diamond layer, said surface having been in contact with a substrate used in the formation of said diamond layer by a vapor phase growth method, resulting in said surface having a surface roughness of 0.1 μm or less.
Claim 2
Dependent Claim 69 words
A surface acoustic wave device comprising a diamond layer, a piezoelectric layer and a comb-like electrode, wherein said piezoelectric layer and said comb-like electrode are formed on a surface of said diamond layer, said surface having been in contact with a substrate used in the formation of said diamond layer by a vapor phase growth method, resulting in said surface having a surface roughness of 0.1 μm or less.
Claim 3
Dependent Claim 21 words
The surface acoustic wave device according to claim 1, wherein said diamond layer has a thickness of at least 5 μm.
Claim 4
Dependent Claim 22 words
The surface acoustic wave device according to claim 1, wherein said diamond layer has a resistivity of at least 10 6 Ω.cm.
Claim 5
Dependent Claim 35 words
The surface acoustic wave device according to claim 1, wherein said piezoelectric layer is made of at least one material selected from ZnO, AlN, PZT, PLZT, SiO 2 , LiTaO 3 and LiNbO 3 .
Claim 6
Dependent Claim 22 words
The surface acoustic wave device according to claim 1, wherein said piezoelectric layer has a resistivity of at least 10 4 Ω.cm.
Claim 7
Dependent Claim 56 words
A surface acoustic wave device comprising: a diamond layer having an exterior surface that has been etched from an adjoining substrate so as to have a surface roughness of 0.1 μm or less; a piezoelectric layer on the exterior surface of said diamond layer; and a comb-like electrode on the exterior surface of said diamond layer.
Claim 8
Dependent Claim 56 words
A surface acoustic wave device comprising: a diamond layer having an exterior surface that has been etched from an adjoining substrate so as to have a surface roughness of 0.1 μm or less; a piezoelectric layer on the exterior surface of said diamond layer; and a comb-like electrode on the exterior surface of said diamond layer.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-07-11 1998-01-10 1998-07-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-07-11 2002-01-10 2002-07-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-07-11 2006-01-10 2006-07-12 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag