Method of forming crystal semiconductor film

Claim 1

A method of forming a monocrystal silicon semiconductor film, comprising the steps of: depositing on a glass substrate having a depression, a first material comprised of an amorphous silicon nitride with a higher nucleation density and a smaller mechanical abrasion rate to an abrasive grain to form a layer comprising the first material; depositing on the layer comprising said first material a second material comprised of a silicon oxide with a lower nucleation density and a greater mechanical abrasion rate to said abrasive grain than said first material to form a layer comprising the second material; forming a nucleation surface by removing a minute part of said layer comprising the second material at the part of said depression, thereby uncovering said layer comprising the first material to have a sufficiently minute area so as to form only a single nucleus from which said monocrystal is grown by a crystal formation processing; and subjecting the substrate having the nucleation surface thus formed, to a processing for forming a silicon crystal having a greater mechanical abrasion rate to said abrasive grain than said first material so that a monocrystal is made to grow beyond the area of said depression from the nucleus formed on said nucleation surface; and the step of mechanically polishing said grown monocrystal silicon by the use of said abrasive grain to the level corresponding to the surface of said layer comprising the first material so that said monocrystal is flattened.

Claim 2

A method of forming a monocrystal silicon semiconductor film, comprising the steps of: depositing on a glass substrate having a depression, a first material comprised of an amorphous silicon nitride with a higher nucleation density and a smaller mechanical abrasion rate to an abrasive grain to form a layer comprising the first material; depositing on the layer comprising said first material a second material comprised of a silicon oxide with a lower nucleation density and a greater mechanical abrasion rate to said abrasive grain than said first material to form a layer comprising the second material; forming a nucleation surface by removing a minute part of said layer comprising the second material at the part of said depression, thereby uncovering said layer comprising the first material to have a sufficiently minute area so as to form only a single nucleus from which said monocrystal is grown by a crystal formation processing; and subjecting the substrate having the nucleation surface thus formed, to a processing for forming a silicon crystal having a greater mechanical abrasion rate to said abrasive grain than said first material so that a monocrystal is made to grow beyond the area of said depression from the nucleus formed on said nucleation surface; and the step of mechanically polishing said grown monocrystal silicon by the use of said abrasive grain to the level corresponding to the surface of said layer comprising the first material so that said monocrystal is flattened.