EP0363100A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Selective polishing method
Assignee: Canon Inc
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Filing: 1989-09-29
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Granted: —
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Expires: 2009-09-29
Abstract
Abstract A selective polishing method comprises polishing the surface of a body to be polished having a region comprising Si₃N₄ and a region comprising a material more easily workable than said Si₃N₄ provided with a difference in height with the surface of the region comprising said more easily workable material being made higher with an abrasive comprising colloidal silica or an abrasive comprising colloidal silica as the solute and water as the solvent.
Inventors
- 👤 Takao Yanehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 02:00
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/129; B; B24; B24B; B24B1/00; H10P50/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
73 words
A selective polishing method, which comprises polishing the surface of a body to be polished having a region comprising Si₃N₄ and a region comprising a material more easily workable than said Si₃N₄ provided with a difference in height with the surface of the region comprising said more easily workable material being made higher with an abrasive comprising colloidal silica or an abrasive comprising colloidal silica as the solute and water as the solvent.
Claim 2
Dependent Claim
73 words
A selective polishing method, which comprises polishing the surface of a body to be polished having a region comprising Si₃N₄ and a region comprising a material more easily workable than said Si₃N₄ provided with a difference in height with the surface of the region comprising said more easily workable material being made higher with an abrasive comprising colloidal silica or an abrasive comprising colloidal silica as the solute and water as the solvent.
Claim 3
Dependent Claim
22 words
A selective polishing method according to claim 1, wherein the material for forming the region comprising more easily workable material is silicon.
Claim 4
Dependent Claim
32 words
A selective polishing method according to claim 1, wherein a plurality of said region comprising Si₃N₄ is provided, and the distance between the regions comprising said Si₃N₄ is 50 µm or less.
Claim 5
Dependent Claim
22 words
A selective polishing method according to claim 1, wherein the composition of said colloidal silica contains 80 % or more of SiO₂.
Claim 6
Dependent Claim
90 words
A selective polishing method, which comprises polishing the surface of a body to be polished having a region comprising a material having a Mohs′ hardness of 9 or higher and a region comprising a material more easily workable than the material having a Mohs′ hardness of 9 or higher provided with a difference in height with the surface of the region comprising said more easily workable material being made higher with an abrasive comprising colloidal silica or an abrasive comprising colloidal silica as the solute and water as the solvent.
Claim 7
Dependent Claim
90 words
A selective polishing method, which comprises polishing the surface of a body to be polished having a region comprising a material having a Mohs′ hardness of 9 or higher and a region comprising a material more easily workable than the material having a Mohs′ hardness of 9 or higher provided with a difference in height with the surface of the region comprising said more easily workable material being made higher with an abrasive comprising colloidal silica or an abrasive comprising colloidal silica as the solute and water as the solvent.
Claim 8
Dependent Claim
55 words
In a method of manufacturing a semi-conductor device of a kind which includes the step of polishing a semi-conductor layer down to the level of the top of an element embedded in the layer, the polishing being characterised in that it is carried out using an abrasive medium which does not contain any etching ingredient.
Claim 9
Dependent Claim
55 words
In a method of manufacturing a semi-conductor device of a kind which includes the step of polishing a semi-conductor layer down to the level of the top of an element embedded in the layer, the polishing being characterised in that it is carried out using an abrasive medium which does not contain any etching ingredient.
Claim 10
Dependent Claim
12 words
A semi-conductor produced by the method as claimed in any previous claim.
References Cited (Backward Citations)
No citation records indexed.
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