EP0241316A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for forming crystalline deposited film
Assignee: Canon Inc
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Filing: 1987-04-13
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Granted: —
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Expires: 2007-04-13
Abstract
Abstract A method for forming a crystalline deposited film comprises introducing an active species (A) formed through decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation having a property of effecting chemical mutual reaction with said active species (A) into a film forming space in which a substrate having a free surface with a non-nucleation surface (S NDS ) with smaller nucleation density and a nucleation surface (S NDL ) having sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) being arranged adjacent thereto is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (S NDL ) with at least one precursor of these precursors being as the source for feeding the constituent element of the deposited film, and permitting a single crystal to grow from said nucleus.
Inventors
- 👤 Yutaka Hirai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 06:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; C; C23; C23C; C23C16/00; C23C16/04; C23C16/22; C23C16/24; C23C16/44; C30; C30B; C30B25/00; C30B25/02; C30B25/18; H10P14/24; H10P14/27; H10P14/271; H10P14/276; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
183 words
A method for forming a crystalline deposited film, which comprises introducing an active species (A) formed through decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation having a property of effecting chemical mutual reaction with said active species (A) into a film forming space in which a substrate having a free surface with a non-nucleation surface (S NDS ) with smaller nucleation density and a nucleation surface (S NDL ) having sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) being arranged adjacent thereto is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (S NDL ) with at least one precursor of these precursors being as the source for feeding the constituent element of the deposited film, and permitting a single crystal to grow from said nucleus.
Claim 2
Independent Claim
183 words
A method for forming a crystalline deposited film, which comprises introducing an active species (A) formed through decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation having a property of effecting chemical mutual reaction with said active species (A) into a film forming space in which a substrate having a free surface with a non-nucleation surface (S NDS ) with smaller nucleation density and a nucleation surface (S NDL ) having sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) being arranged adjacent thereto is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (S NDL ) with at least one precursor of these precursors being as the source for feeding the constituent element of the deposited film, and permitting a single crystal to grow from said nucleus.
Claim 3
Dependent Claim
185 words
A process for forming a crystalline deposited film which comprises preparing a substrate for formation of a crystalline deposited film comprising a support member having a non-nucleation surface (S NDS ) showing a small nucleation density where a material (M L ) forming a nucleation surface (S NDL ) showing a greater nucleation density (ND L ) than the nucleation density of said non-nucleation surface (ND S ) is given onto the desired portion of said non-nucleation surface (S NDS ) having an area small enough for crystal growth from only one nucleus to thereby form a nucleation surface; arranging said substrate within a film forming space; and then introducing an active species (A) formed through decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation having a property of effecting chemical mutual reaction with said active species (A) into the film forming space wherein said substrate is previously arranged, thus resulting in formation of a single nucleus on said nucleation surface (S NDL ) followed by single crystal growth from said nucleus.
Claim 4
Dependent Claim
185 words
A process for forming a crystalline deposited film which comprises preparing a substrate for formation of a crystalline deposited film comprising a support member having a non-nucleation surface (S NDS ) showing a small nucleation density where a material (M L ) forming a nucleation surface (S NDL ) showing a greater nucleation density (ND L ) than the nucleation density of said non-nucleation surface (ND S ) is given onto the desired portion of said non-nucleation surface (S NDS ) having an area small enough for crystal growth from only one nucleus to thereby form a nucleation surface; arranging said substrate within a film forming space; and then introducing an active species (A) formed through decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation having a property of effecting chemical mutual reaction with said active species (A) into the film forming space wherein said substrate is previously arranged, thus resulting in formation of a single nucleus on said nucleation surface (S NDL ) followed by single crystal growth from said nucleus.
Claim 5
Dependent Claim
30 words
A method according to claim 1 or 2, wherein a plural number of said nucleation surfaces (S NDL ) are arranged as sectionalized within said non-nucleation surface (S NDS ).
Claim 6
Dependent Claim
27 words
A method according to claim 1 or 2, wherein said nucleation surfaces (S NDL ) are arranged as regularly sectionalized within said non-nucleation surface (S NDS ).
Claim 7
Dependent Claim
27 words
A method according to claim 1 or 2, wherein said nucleation surfaces (S NDL ) are arranged as sectionalized irregularly within said non-nucleation surface (S NDS ).
Claim 8
Dependent Claim
30 words
A method according to claim 1 or 2, wherein a plural number of said nucleation surface (S NDL ) are arranged as sectionalized on said non-nucleation surface (S NDS ).
Claim 9
Dependent Claim
27 words
A method according to claim 1 or 2, wherein said nucleation surfaces (S NDL ) are arranged as sectionalized regularly on said non-nucleation surface (S NDS ).
Claim 10
Dependent Claim
27 words
A method according to claim 1 or 2, wherein said nucleation surfaces (S NDL ) are arranged as sectionalized irregularly on said non-nucleation surface (S NDS ).
Claim 11
Independent Claim
144 words
A method for forming crystalline deposited film, which comprises introducing an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) into a film forming space in which there is previously arranged a substrate of which convex surface is constituted of a nonnucleation surface (S NDS ) with small nucleation density, and concave surface is constituted of a nucleation surface (S NDL ) having sufficiently small area for crystal growth only from single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), forming a single nucleus on said nucleation surface (S NDL ) and permitting a single crystal to grow from said nucleus.
Claim 12
Independent Claim
144 words
A method for forming crystalline deposited film, which comprises introducing an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) into a film forming space in which there is previously arranged a substrate of which convex surface is constituted of a nonnucleation surface (S NDS ) with small nucleation density, and concave surface is constituted of a nucleation surface (S NDL ) having sufficiently small area for crystal growth only from single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), forming a single nucleus on said nucleation surface (S NDL ) and permitting a single crystal to grow from said nucleus.
Claim 13
Dependent Claim
26 words
A method for forming crystalline deposited film according to claim 9, wherein said nucleation surface (S NDL ) is arranged in a plural number as sectionalized.
Claim 14
Dependent Claim
27 words
A method for forming crystalline deposited film according to claim 9, wherein said nucleation surface (S NDL ) is arranged in a plural number as regularly sectionalized.
Claim 15
Dependent Claim
27 words
A method for forming crystalline deposited film according to claim 9, wherein said nucleation surface (S NDL ) is arranged in a plural number as irregularly sectionalized.
Claim 16
Dependent Claim
24 words
A method for forming crystalline deposited film according to claim 9, wherein said nucleation surface (S NDL ) is arranged in a plural number.
Claim 17
Dependent Claim
25 words
A method for forming crystalline deposited film according to claim 9, wherein said nucleation surface (S NDL ) is arranged regularly in a plural number.
Claim 18
Dependent Claim
25 words
A method for forming crystalline deposited film according to claim 9, wherein said nucleation surface (S NDL ) is arranged irregularly in a plural number.
Claim 19
Dependent Claim
32 words
A method according to claim 1, 2 or 9, wherein said nucleation surface (S NDL ) is formed of a material modified from the material forming said non-nucleation surface (S NDS ).
Claim 20
Independent Claim
30 words
A method according to any preceding claim, wherein said nucleation surface (S NDL ) is formed of a material different from the material forming said non-nucleation surface (S NDS ).
Claim 21
Independent Claim
20 words
A method according to any preceding claim, wherein said non-nucleation surface (S NDS ) is formed of an amorphous material.
Claim 22
Dependent Claim
34 words
A method according to claim 1, 2 or 9, wherein a plural number of said nucleation surfaces are provided as sectionalized, and single crystals are grown from said respective nucleation surfaces (S NDL ).
Claim 23
Dependent Claim
34 words
A method according to claim 19, wherein the single crystals grown from said respective nucleation surfaces (S NDL ) are subjected to overgrowth in the direction of said respective nucleation surfaces (S NDL ).
Claim 24
Dependent Claim
38 words
A method according to claim 19 wherein the single crystals grown from the respective nucleation surfaces (S NDL ) are permitted to grow to the sizes until they are contacted between the adjacent nucleation surfaces (S NDL ).
Claim 25
Independent Claim
22 words
A method according to any preceding claim, wherein said nucleation surface (S NDL ) is formed according to the ion implantation method.
Claim 26
Independent Claim
31 words
A method according to any preceding claim, wherein said non-nucleation surface (S NDS ) is formed of silicon oxide and said nucleation surface (S NDL ) is formed of silicon nitride.
Claim 27
Independent Claim
35 words
A method according to any preceding claim wherein said compound containing silicon and a halogen is a chain silane compound of which at least a part of the hydrogen atoms is substituted with halogen atoms.
Claim 28
Dependent Claim
20 words
A method according to claim 24, wherein said compound substituted with halogen atoms is a straight chain halogenated silicon compound.
Claim 29
Dependent Claim
32 words
A method according to claim 25, wherein said straight chain halogenated silicon compound is represented by the formula Si n X 2n+2 ( n is an integer, X is a halogen atom).
Claim 30
Dependent Claim
19 words
A method according to claim 24 wherein said chain halogenated silicon compound is a branched chain halogenated silicon compound.
Claim 31
Independent Claim
28 words
A method according to any of claims 1 to 23, wherein said compound containing silicon and a halogen is a halogenated silicon having a cyclic structure of silicon.
Claim 32
Independent Claim
20 words
A method according to any preceding claim, wherein the chemical substance forming said activated species (B) contains a halogen gas.
Claim 33
Dependent Claim
18 words
A method form forming crystalline deposited film according to claim 29, wherein said halogen gas is fluorine gas.
Claim 34
Dependent Claim
18 words
A method for forming crystalline deposited film according to claim 29 wherein said halogen gas is chlorine gas.
Claim 35
Dependent Claim
23 words
A method for forming crystalline deposited film according to claim 29 wherein the chemical substance forming said activated species (B) is hydrogen gas.
Claim 36
Dependent Claim
24 words
A method according to claim 29, wherein the chemical substance forming said activated species (B) is a gas containing fluorine atoms as a constituent.
References Cited (Backward Citations)
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