US5300188A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for making substantially smooth diamond
Assignee: Kobe Development Corp
•
Filing: 1992-11-13
•
Granted: 1994-04-05
•
Expires: 2012-11-13
Abstract
Abstract The present invention provides a process for making a diamond layer having a substantially smooth upper surface and a predetermined thickness on a substrate. The process includes depositing a patterned polish stopping layer on a substrate to a predetermined thickness while leaving predetermined portions of the substrate exposed. A diamond layer is than deposited on the polish stopping layer and on the predetermined portions of the substrate left exposed. The diamond layer is polished down to the polish stopping layer thereby forming a diamond layer on the substrate having a thickness substantially equal to the predetermined thickness of the polish stopping layer. The polish is conducted by a method that includes the mechanical and/or chemical consumption of the diamond layer. The polish stopping layer is capable of substantially stopping the consumption of the diamond layer.
Inventors
- 👤 Alison J. Tessmer
- 👤 David L. Dreifus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 01:27
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; B; B24; B24B; B24B37/00; B24B37/04; H10P52/00
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
123 words
A process of making a substantially smooth diamond layer having a thickness on a substrate comprising the steps of: depositing a patterned polish stopping layer on a substrate to a thickness while leaving portions of the substrate exposed; depositing a diamond layer on the polish stopping layer and on the portions of the substrate left exposed; and polishing the diamond layer down to the polish stopping layer by a method including the mechanical or chemical consumption or both of the diamond layer wherein the polish stopping layer is capable of stopping the consumption of the diamond layer to form a diamond layer on the substrate having a smooth upper surface and having a thickness equal to the thickness of the polish stopping layer.
Claim 2
Dependent Claim
123 words
A process of making a substantially smooth diamond layer having a thickness on a substrate comprising the steps of: depositing a patterned polish stopping layer on a substrate to a thickness while leaving portions of the substrate exposed; depositing a diamond layer on the polish stopping layer and on the portions of the substrate left exposed; and polishing the diamond layer down to the polish stopping layer by a method including the mechanical or chemical consumption or both of the diamond layer wherein the polish stopping layer is capable of stopping the consumption of the diamond layer to form a diamond layer on the substrate having a smooth upper surface and having a thickness equal to the thickness of the polish stopping layer.
Claim 3
Dependent Claim
13 words
The process according to claim 1 wherein the diamond layer is semiconducting diamond.
Claim 4
Dependent Claim
17 words
The process according to claim 2 wherein the diamond layer is single crystal diamond or polycrystalline diamond.
Claim 5
Dependent Claim
13 words
The process according to claim 1 wherein the diamond layer is insulating diamond.
Claim 6
Dependent Claim
24 words
The process according to claim 1 wherein the polish stopping layer is capable of stopping the chemical consumption of diamond by SiO x .
Claim 7
Dependent Claim
30 words
The process according to claim 1 wherein the polish stopping layer is capable of stopping the mechanical and chemical consumption of the diamond by a hot iron scathe polishing technique.
Claim 8
Dependent Claim
28 words
The process according to claim 1 wherein the polish stopping layer is layer of a material selected from the group consisting of polysilicon, silicon nitride and silicon oxide.
Claim 9
Dependent Claim
13 words
The process according to claim 1 wherein the substrate is a non-diamond substrate.
Claim 10
Dependent Claim
22 words
The process according to claim 8 wherein the non-diamond substrate is selected from the group consisting of metals, carbides, nitrides and oxides.
Claim 11
Dependent Claim
13 words
The process according to claim 1 wherein the substrate is a diamond substrate.
Claim 12
Dependent Claim
22 words
The process of claim 1 including the additional step of removing the polish stopping layer by etching after the step of polishing.
Claim 13
Dependent Claim
139 words
A process of making a smooth multi-layer diamond structure having a thickness on a substrate comprising the steps of: forming two or more diamond layers on a substrate to provide a diamond multi-layer structure having a first thickness; etching the diamond multi-layer structure to expose portions of the substrate; depositing a polish stopping layer to a second thickness which is less than the first thickness of the diamond multi-layer structure; and polishing the diamond multi-layer structure down to the polish stopping layer by a method including the mechanical or chemical consumption or both of the diamond layers wherein the polish stopping layer is capable of stopping the consumption of the diamond layer to form a diamond multi-layer structure on the substrate having a smooth upper surface and having a thickness equal to the thickness of the polish stopping layer.
Claim 14
Dependent Claim
139 words
A process of making a smooth multi-layer diamond structure having a thickness on a substrate comprising the steps of: forming two or more diamond layers on a substrate to provide a diamond multi-layer structure having a first thickness; etching the diamond multi-layer structure to expose portions of the substrate; depositing a polish stopping layer to a second thickness which is less than the first thickness of the diamond multi-layer structure; and polishing the diamond multi-layer structure down to the polish stopping layer by a method including the mechanical or chemical consumption or both of the diamond layers wherein the polish stopping layer is capable of stopping the consumption of the diamond layer to form a diamond multi-layer structure on the substrate having a smooth upper surface and having a thickness equal to the thickness of the polish stopping layer.
Claim 15
Dependent Claim
13 words
The process according to claim 12 wherein the diamond layer is semiconducting diamond.
Claim 16
Dependent Claim
17 words
The process according to claim 13 wherein the diamond layer is single crystal diamond or polycrystalline diamond.
Claim 17
Dependent Claim
13 words
The process according to claim 12 wherein the diamond layer is insulating diamond.
Claim 18
Dependent Claim
24 words
The process according to claim 12 wherein the polish stopping layer is capable of stopping the chemical consumption of diamond by SiO x .
Claim 19
Dependent Claim
27 words
The process according to claim 12 wherein the polish stopping layer is capable of stopping the mechanical and chemical consumption of a hot iron scathe polishing technique.
Claim 20
Dependent Claim
29 words
The process according to claim 12 wherein the polish stopping layer is a layer of a material selected from the group consisting of polysilicon, silicon nitride and silicon oxide.
Claim 21
Dependent Claim
13 words
The process according to claim 12 wherein the substrate is a non-diamond substrate.
Claim 22
Dependent Claim
22 words
The process according to claim 19 wherein the non-diamond substrate is selected from the group consisting of metals, carbides, nitrides and oxides.
Claim 23
Dependent Claim
13 words
The process according to claim 12 wherein the substrate is a diamond substrate.
Claim 24
Dependent Claim
22 words
The process of claim 13 including the additional steps of removing the polish stopping layer by etching after the step of polishing.
Claim 25
Dependent Claim
122 words
A process of making a smooth diamond layer having a thickness on a substrate comprising: providing a generally planar substrate formed from a polish stopping material; etching the substrate formed from a polish stopping material to provide a plurality of recessed portions having a depth; depositing a diamond layer on the substrate and the recessed portions thereof; and polishing the diamond layer down to the upper surface of the substrate by a method including the mechanical or chemical consumption or both of the diamond layer wherein the substrate formed from the polish stopping material is capable of stopping the consumption of the diamond layer to form a diamond layer on the substrate having a smooth upper surface and planar with the substrate.
Claim 26
Dependent Claim
122 words
A process of making a smooth diamond layer having a thickness on a substrate comprising: providing a generally planar substrate formed from a polish stopping material; etching the substrate formed from a polish stopping material to provide a plurality of recessed portions having a depth; depositing a diamond layer on the substrate and the recessed portions thereof; and polishing the diamond layer down to the upper surface of the substrate by a method including the mechanical or chemical consumption or both of the diamond layer wherein the substrate formed from the polish stopping material is capable of stopping the consumption of the diamond layer to form a diamond layer on the substrate having a smooth upper surface and planar with the substrate.
Claim 27
Dependent Claim
27 words
The process according to claim 23 wherein the polish stopping material of the substrate is selected from the group consisting of polysilicon, silicon nitride and silicon oxide.
Claim 28
Dependent Claim
13 words
The process according to claim 23 wherein the diamond layer is semiconducting diamond.
Claim 29
Dependent Claim
17 words
The process according to claim 23 wherein the diamond layer is single crystal diamond or polycrystalline diamond.
Claim 30
Dependent Claim
13 words
The process according to claim 23 wherein the diamond layer is insulating diamond.
Claim 31
Dependent Claim
24 words
The process according to claim 23 wherein the polish stopping layer is capable of stopping the chemical consumption of diamond by SiO x .
Claim 32
Dependent Claim
30 words
The process according to claim 23 wherein the polish stopping layer is capable of stopping the mechanical and chemical consumption of the diamond by a hot iron scathe polishing technique.
References Cited (Backward Citations)
US4643161A
Cited
JPS61166041A
Cited
US4806900A
Cited
US4863529A
Cited
US5131963A
Cited
US4925701A
Cited
US5002899A
Cited
US5136344A
Cited
US5006914A
Cited
US5127983A
Cited
US5086014A
Cited
US5066938A
Cited
US5082359A
Cited
US5070040A
Cited
US5099296A
Cited
US5071677A
Cited
US5154023A
Cited
US5246884A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-04 | 1997-10-04 | 1998-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-04 | 2001-10-04 | 2002-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-04 | 2005-10-04 | 2006-04-05 | $7700.00 | Window Closed / Lapsed |