Light-emitting device, optical recording head utilizing said device, and optical printer utilizing said optical recording head

Claim 2

A light-emitting device formed by applying a crystal formation process to a substrate with a free surface on which are provided, in mutually adjacent manner, a non-nucleation surface and a nucleation surface with a nucleation density larger than that of said non-nucleation surface, wherein said nucleation surface is formed into an elongated configuration of a width of 1-8 μm, comprising a first polycrystalline semiconductor layer of a first conductive type formed on said nucleation surface, a second polycrystalline semiconductor layer of a second conductive type which is opposite of said first conductive type formed on said first polycrystalline semiconductor layer so as to expose a portion of said first polycrystalline semiconductor layer, and a plurality of electrodes respectively formed on said exposed portion of said first polycrystalline layer and said second polycrystalline second layer.

Claim 3

A light-emitting device according to claim 1, wherein a size of the nucleation surface is to selected that an average grain size of the crystals formed on the substrate is 0.6 μm or larger.

Claim 4

A light-emitting device according to claim 1, wherein said nucleation surface has a longer side of 8 μm or longer.

Claim 5

A light emitting device according to claim 1, wherein a plurality of said nucleation surfaces are provided.

Claim 6

A light emitting device according to claim 1, wherein, in the crystal formation process, an etchant material is added.

Claim 7

A light emitting device according to claim 1, wherein said substrate is made of at least one of the following: Al 2 O 3 , Al, BN ceramic, carbon, polysilicon, quartz, high melting point glass, W, Mo and Ti.

Claim 8

A light emitting device according to claim 1, wherein said non-nucleation surface is formed of at least one of amorphous SiO 2 and amorphous Si 3 N 4 .

Claim 9

A light emitting device according to claim 1, wherein said nucleation surface is formed of at least one of the following: non-monocrystalline silicon, AlN, Al 2 O 3 , TaO 5 , TiN, TiO 2 and WO 3 .

Claim 10

A light emitting device according to claim 1, wherein said plurality of electrodes are at least one of Cr/Au or AuGe/Au.

Claim 11

A light-emitting device according to claim 1, wherein crystals formed on the substrate are polycrystals of a compound of groups III and V of the periodic table.

Claim 12

A light emitting device according to claim 10, wherein said group III-V compound is at least one of the following: GaAs, GaAlAs, GaP, GaAsP, InP and GaInAsP.

Claim 13

A optical recording printer head utilizing a light-emitting device formed by applying a crystal formation process to a substrate with a free surface on which are provided, in mutually adjacent manner, a non-nucleation surface and a nucleation surface with a nucleation density larger than that of said non-nucleation surface, wherein said nucleation surface is formed into an elongated configuration of a width of 1-8 μm, said light-emitting device comprising a first polycrystalline semiconductor layer of a first conductive type formed on said nucleation surface, a second polycrystalline semiconductor layer of a second conductive type which is opposite of said first conductive type formed on said first polycrystalline semiconductor layer so as to expose a portion of said first polycrystalline semiconductor layer, and a plurality of electrodes respectively formed on said exposed portion of said first polycrystalline layer and said second polycrystalline semiconductor layer.

Claim 14

A optical recording printer head utilizing a light-emitting device formed by applying a crystal formation process to a substrate with a free surface on which are provided, in mutually adjacent manner, a non-nucleation surface and a nucleation surface with a nucleation density larger than that of said non-nucleation surface, wherein said nucleation surface is formed into an elongated configuration of a width of 1-8 μm, said light-emitting device comprising a first polycrystalline semiconductor layer of a first conductive type formed on said nucleation surface, a second polycrystalline semiconductor layer of a second conductive type which is opposite of said first conductive type formed on said first polycrystalline semiconductor layer so as to expose a portion of said first polycrystalline semiconductor layer, and a plurality of electrodes respectively formed on said exposed portion of said first polycrystalline layer and said second polycrystalline semiconductor layer.

Claim 15

A light emitting device according to claim 12, wherein a plurality of said nucleation surfaces are formed with intervals of 10-200 μm therebetween.

Claim 16

An optical printer apparatus utilizing an optical recording printer head having a light emitting device formed by applying a crystal formation process to a substrate with a free surface on which are provided, in mutually adjacent manner, a non-nucleation surface and a nucleation surface with a nucleation density larger than that of said non-nucleation surface, wherein said nucleation surface is formed into an elongated configuration of a width of 1-8 μm, said light-emitting device comprising a first polycrystalline semiconductor layer of a first conductive type formed on said nucleation surface, a second polycrystalline semiconductor layer of a second conductive type which is opposite of said first conductive type formed on said first polycrystalline semiconductor layer so as to expose a portion of said first polycrystalline semiconductor layer, and a plurality of electrodes respectively formed on said exposed portion of said first polycrystalline layer and said second polycrystalline second layer.

Claim 17

An optical printer apparatus utilizing an optical recording printer head having a light emitting device formed by applying a crystal formation process to a substrate with a free surface on which are provided, in mutually adjacent manner, a non-nucleation surface and a nucleation surface with a nucleation density larger than that of said non-nucleation surface, wherein said nucleation surface is formed into an elongated configuration of a width of 1-8 μm, said light-emitting device comprising a first polycrystalline semiconductor layer of a first conductive type formed on said nucleation surface, a second polycrystalline semiconductor layer of a second conductive type which is opposite of said first conductive type formed on said first polycrystalline semiconductor layer so as to expose a portion of said first polycrystalline semiconductor layer, and a plurality of electrodes respectively formed on said exposed portion of said first polycrystalline layer and said second polycrystalline second layer.