Light emission element using a polycrystalline semiconductor material of III-V group compound

Claim 2

A light emission element using a polycrystalline semiconductor material of III-V group compound including an n type semiconductor polycrystalline layer and a p type semiconductor polycrystalline layer, wherein said n type semiconductor polycrystalline layer and said p type semiconductor polycrystalline layer comprise a light emitting area formed by polycrystals, the average grain size of said polycrystals being at least 0.6 μm, and a wiring area formed by polycrystals wherein the average grain size of said polycrystals is 0.5 μm or less.

Claim 3

A light emission element structured by forming polycrystals of III-V group compound wherein a crystal growth treatment is applied to a substrate having a non-nucleation surface of a small nucleation density, a first nucleation surface of a nucleation density larger than that of said nonnucleation surface, over which a PN junction is placed to form a light emitting area, a second nucleation surface a first portion over which a p type semiconductor layer is formed and a second portion over which is formed an n type semiconductor layer, and first and second electrodes formed respectively over said first and second portions, wherein said first nucleation surface is arranged in a position so as to be closer to one of said first and second portions of said second nucleation surface, and the average grain size of the polycrystalline semiconductor constituting said light emitting area is at least 0.6 μm, and the average grain size of the p type semiconductor layer and n type semiconductor layer where said electrodes are formed is 0.5 μm or less.

Claim 4

A light emission element structured by forming polycrystals of III-V group compound wherein a crystal growth treatment is applied to a substrate having a non-nucleation surface of a small nucleation density, a first nucleation surface of a nucleation density larger than that of said nonnucleation surface, over which a PN junction is placed to form a light emitting area, a second nucleation surface a first portion over which a p type semiconductor layer is formed and a second portion over which is formed an n type semiconductor layer, and first and second electrodes formed respectively over said first and second portions, wherein said first nucleation surface is arranged in a position so as to be closer to one of said first and second portions of said second nucleation surface, and the average grain size of the polycrystalline semiconductor constituting said light emitting area is at least 0.6 μm, and the average grain size of the p type semiconductor layer and n type semiconductor layer where said electrodes are formed is 0.5 μm or less.