EP0285358A2
Expired / Lapsed
EP
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Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
Assignee: Canon Inc
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Filing: 1988-03-28
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Granted: —
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Expires: 2008-03-28
Abstract
Abstract A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with smaller nucleation density and a nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), by exposing the substrate to either of the gas phases: (a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S NDL ) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in that a semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type and a starting material (Dp) for feeding a dopant for controlling to the electroconduction type opposite to said electrcondition type with change-over to one another into said gas phase, during said crystal forming treatment.
Inventors
- 👤 Hiroyuki Tokunaga
- 👤 Kenji Yamagata
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 12:30
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B23/04; C30B25/00; C30B25/02; C30B25/04; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3424; H10P14/3431; H10P14/3438; H10P14/3441; Y; Y10; Y10S; Y10S148/00; Y10S148/152; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
247 words
A process for producing a compound semiconductor, which comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with a smaller nucleation density and a nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), by exposing the substrate to either of the gas phases: (a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S NDL ) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in that a semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type and a starting material (Dp) for feeding a dopant for controlling to the electroconduction type opposite to said electrcondition type with change-over to one another into said gas phase, during said crystal forming treatment.
Claim 2
Dependent Claim
247 words
A process for producing a compound semiconductor, which comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with a smaller nucleation density and a nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), by exposing the substrate to either of the gas phases: (a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S NDL ) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in that a semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type and a starting material (Dp) for feeding a dopant for controlling to the electroconduction type opposite to said electrcondition type with change-over to one another into said gas phase, during said crystal forming treatment.
Claim 3
Dependent Claim
23 words
A process for producing a compound semiconductor according to claim 1, wherein said crystal growth treatment is performed according to the MOCVD method.
Claim 4
Dependent Claim
28 words
A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed internally of said nonnucleation surface (S NDS ).
Claim 5
Dependent Claim
30 words
A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed on the face of said nonnucleation surface (S NDS ).
Claim 6
Dependent Claim
26 words
A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed in a plural number as sectionalized.
Claim 7
Dependent Claim
27 words
A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed in a plural number as sectionalized regularly.
Claim 8
Dependent Claim
27 words
A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed in a plural number as sectionalized irregularly.
Claim 9
Dependent Claim
26 words
A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed in the shape of a lattice.
Claim 10
Dependent Claim
41 words
A process for producing a compound semiconductor according to claim 1, wherein the monocrystal formed on the nucleation surface (S NDL ) is grown in the direction of the nucleation surface (S NDL ) beyond said nucleation surface (S NDL ).
Claim 11
Dependent Claim
39 words
A process for producing a compound semiconductor according to claim 5, wherein the monocrystal grown from the each nucleation surface (S NDL ) is grown to the size to be adjacent to the adjoining nucleation surface (S NDL ).
Claim 12
Dependent Claim
37 words
A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed of a material which is modified from the material for producing said nonnucleation surface (S NDS ).
Claim 13
Dependent Claim
25 words
A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed by the ion implantation method.
Claim 14
Dependent Claim
52 words
A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed by depositing a material having sufficiently larger nucleation density than the material for producing said nonnucleation surface (S NDS ) on said nonnucleation surface (S NDS ), followed by sufficiently fine patterning.
Claim 15
Dependent Claim
74 words
A process for producing a compound semiconductor according to claim 1, wherein said nonnucleation surface (S NDS ) is formed so as to cover over the surface comprising the material constituting said nucleation surface (S NDL ) and the desired portion of said nonnucleation surface (S NDS ) is removed, thereby having exposed a nucleation surface (S NDL ) with a suficiently small area for a crystal to grow only from a single nucleus.
Claim 16
Dependent Claim
20 words
A process for producing a compound semiconductor according to claim 1, wherein said substrate is constituted of an amorphous material.
Claim 17
Dependent Claim
17 words
A process for producing a compound semiconductor according to claim 15, wherein said amorphous material is SiO₂.
Claim 18
Dependent Claim
21 words
A process for producing a compound semiconductor according to claims 1, wherein said compound semiconductor is a binary system compound semiconductor.
Claim 19
Dependent Claim
21 words
A process for producing a compound semiconductor according to claim 1, wherein said compound semiconductor is a mixed crystal compound semiconductor.
Claim 20
Dependent Claim
23 words
A semiconductor device by use of a compound semiconductor obtained by a process for producing a compound semiconductor as defined in claim 1.
Claim 21
Dependent Claim
17 words
A semiconductor device according to claim 19, wherein said semiconductor device is a light emission display device.
Claim 22
Dependent Claim
228 words
A process for producing a compound semiconductor, which comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with a smaller nucleation density and a nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), by exposing the substrate to either of the gas phases: (a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S NDL ) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in that a semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type while changing the introduced amount of said starting material (Dn) with the lapse of time.
Claim 23
Dependent Claim
228 words
A process for producing a compound semiconductor, which comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with a smaller nucleation density and a nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), by exposing the substrate to either of the gas phases: (a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S NDL ) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in that a semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type while changing the introduced amount of said starting material (Dn) with the lapse of time.
References Cited (Backward Citations)
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