US5764571A
Expired / Lapsed
US
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Electrically alterable non-volatile memory with N-bits per cell
Assignee: MLC Intellectual Property LLC
•
Filing: 1995-02-27
•
Granted: 1998-06-09
•
Expires: 2015-02-27
Abstract
Abstract An electrically alterable, non-volatile multi-bit memory cell has K n predetermined memory states (K n >2), where K is a base of a predetermined number system and n is a number of bits stored per cell. Programming of the cell is verified by selecting a reference signal corresponding to the information to be stored and comparing a signal of the cell with the selected reference signal.
Inventors
- 👤 Gerald J. Banks
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:42
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/12; G11C11/00; G11C11/56; G11C11/5621; G11C11/5628; G11C11/5642; G11C16/34; G11C16/3436; G11C16/3454; G11C16/3459; G11C16/14; G11C16/16; G11C16/32; G11C2211/00; G11C2211/56; G11C2211/562; G11C2211/5621; G11C2211/563; G11C2211/5634; G11C2211/564; G11C2211/5642; G11C7/00; G11C7/10; G11C7/1006
Claims Analysis
Total Claims: 63
Claim 1
Independent Claim
146 words
A multi-level memory device comprising: an electrically alterable non-volatile multi-level memory cell for storing input information in a corresponding one of K n predetermined memory states of said multi-level memory cell, where K is a base of a predetermined number system, n is a number of bits stored per cell, and K n >2; memory cell programming means for programming said multi-level memory cell in accordance with said input information; reference voltage selecting means for selecting one of a plurality of reference voltages in accordance with said input information, each of said reference voltages corresponding to a different one of said predetermined memory states; and comparator means for comparing a voltage of said multi-level memory cell with the selected reference voltage, said comparator means further generating a control signal indicating whether the state of said multi-level memory cell is the state corresponding to said input information.
Claim 2
Dependent Claim
146 words
A multi-level memory device comprising: an electrically alterable non-volatile multi-level memory cell for storing input information in a corresponding one of K n predetermined memory states of said multi-level memory cell, where K is a base of a predetermined number system, n is a number of bits stored per cell, and K n >2; memory cell programming means for programming said multi-level memory cell in accordance with said input information; reference voltage selecting means for selecting one of a plurality of reference voltages in accordance with said input information, each of said reference voltages corresponding to a different one of said predetermined memory states; and comparator means for comparing a voltage of said multi-level memory cell with the selected reference voltage, said comparator means further generating a control signal indicating whether the state of said multi-level memory cell is the state corresponding to said input information.
Claim 3
Dependent Claim
34 words
A device according to claim 1, wherein each memory state is bounded by one or more voltage values, and each reference voltage differs from the voltage value or values bounding the corresponding memory state.
Claim 4
Dependent Claim
94 words
Multi-level memory apparatus, comprising an electrically alterable non-volatile memory cell having more than two predetermined memory states; a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; and a comparator which compares a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 5
Dependent Claim
94 words
Multi-level memory apparatus, comprising an electrically alterable non-volatile memory cell having more than two predetermined memory states; a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; and a comparator which compares a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 6
Dependent Claim
22 words
Apparatus according to claim 3, wherein said comparator compares a bit line signal of said memory cell with the selected reference signal.
Claim 7
Dependent Claim
25 words
Apparatus according to claim 3, wherein said comparator compares a bit line voltage of said memory cell with a voltage of the selected reference signal.
Claim 8
Dependent Claim
99 words
Multi-level memory apparatus, comprising: an electrically alterable non-volatile memory cell having more than two predetermined memory states; a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; and a verifying device which detects a parameter indicating the state of said memory cell and verifies whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 9
Dependent Claim
99 words
Multi-level memory apparatus, comprising: an electrically alterable non-volatile memory cell having more than two predetermined memory states; a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; and a verifying device which detects a parameter indicating the state of said memory cell and verifies whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 10
Dependent Claim
21 words
Apparatus according to claim 6, wherein said verifying device detects said parameter at a bit line terminal of said memory cell.
Claim 11
Dependent Claim
17 words
Apparatus according to claim 6, wherein said parameter is a bit line voltage of said memory cell.
Claim 12
Dependent Claim
108 words
Multi-level memory apparatus, comprising: an electrically alterable non-volatile memory cell having more than two predetermined memory states; a selecting device which selects one of a plurality of predetermined reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source which applies a programming signal to said memory cell; and a comparator which compares a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 13
Dependent Claim
108 words
Multi-level memory apparatus, comprising: an electrically alterable non-volatile memory cell having more than two predetermined memory states; a selecting device which selects one of a plurality of predetermined reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source which applies a programming signal to said memory cell; and a comparator which compares a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 14
Dependent Claim
22 words
Apparatus according to claim 9, wherein said comparator compares a bit line signal of said memory cell with the selected reference signal.
Claim 15
Dependent Claim
25 words
Apparatus according to claim 9, wherein said comparator compares a bit line voltage of said memory cell with a voltage of the selected reference signal.
Claim 16
Dependent Claim
113 words
Multi-level memory apparatus, comprising: an electrically alterable non-volatile memory cell having more than two predetermined memory states; a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source which applies a programming signal to said memory cell; and a verifying device which detects a parameter indicating the state of said memory cell and which verifies whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 17
Dependent Claim
113 words
Multi-level memory apparatus, comprising: an electrically alterable non-volatile memory cell having more than two predetermined memory states; a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source which applies a programming signal to said memory cell; and a verifying device which detects a parameter indicating the state of said memory cell and which verifies whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 18
Dependent Claim
21 words
Apparatus according to claim 12, wherein said verifying device detects said parameter at a bit line terminal of said memory cell.
Claim 19
Dependent Claim
17 words
Apparatus according to claim 12, wherein said parameter is a bit line voltage of said memory cell.
Claim 20
Dependent Claim
94 words
Multi-level memory apparatus, comprising: an electrically alterable non-volatile memory cell having more than two predetermined memory states; a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source which applies a programming signal to said memory cell; and a control device which controls the application of said programming signal to said memory cell based on the selected reference signal.
Claim 21
Dependent Claim
94 words
Multi-level memory apparatus, comprising: an electrically alterable non-volatile memory cell having more than two predetermined memory states; a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source which applies a programming signal to said memory cell; and a control device which controls the application of said programming signal to said memory cell based on the selected reference signal.
Claim 22
Dependent Claim
62 words
Apparatus according to claim 15, wherein said control device detects a parameter indicating the state of said memory cell, verifies whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal, and controls the application of said programming signal to said memory cell based on a result of the verification.
Claim 23
Dependent Claim
44 words
Apparatus according to claim 15, wherein said control device compares a signal corresponding to the state of said memory cell with the selected reference signal and controls the application of said programming signal to said memory cell based on a result of the comparison.
Claim 24
Dependent Claim
96 words
Apparatus for verifying programming of an electrically alterable non-volatile memory cell having more than two predetermined memory states, comprising: a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; and a comparator to compare a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 25
Dependent Claim
96 words
Apparatus for verifying programming of an electrically alterable non-volatile memory cell having more than two predetermined memory states, comprising: a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; and a comparator to compare a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 26
Dependent Claim
25 words
Apparatus according to claim 18, wherein the signal corresponding to the state of said memory cell is a bit line signal of said memory cell.
Claim 27
Dependent Claim
25 words
Apparatus according to claim 18, wherein the signal corresponding to the state of said memory cell is a bit line voltage of said memory cell.
Claim 28
Dependent Claim
102 words
Apparatus for verifying programming of an electrically alterable non-volatile memory cell having more than two predetermined memory states, comprising: a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; and a verifying device to detect a parameter indicating the state of said memory cell and to verify whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 29
Dependent Claim
102 words
Apparatus for verifying programming of an electrically alterable non-volatile memory cell having more than two predetermined memory states, comprising: a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; and a verifying device to detect a parameter indicating the state of said memory cell and to verify whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 30
Dependent Claim
18 words
Apparatus according to claim 21, wherein said parameter is a bit line signal parameter of said memory cell.
Claim 31
Dependent Claim
17 words
Apparatus according to claim 21, wherein said parameter is a bit line voltage of said memory cell.
Claim 32
Dependent Claim
108 words
Apparatus for programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, comprising: a selecting device which selects one of a plurality of predetermined reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source to apply a programming signal to said memory cell; and a comparator to compare a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 33
Dependent Claim
108 words
Apparatus for programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, comprising: a selecting device which selects one of a plurality of predetermined reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source to apply a programming signal to said memory cell; and a comparator to compare a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 34
Dependent Claim
25 words
Apparatus according to claim 24, wherein the signal corresponding to the state of said memory cell is a bit line signal of said memory cell.
Claim 35
Dependent Claim
25 words
Apparatus according to claim 24, wherein the signal corresponding to the state of said memory cell is a bit line voltage of said memory cell.
Claim 36
Dependent Claim
113 words
Apparatus for programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, comprising: a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source to apply a programming signal to said memory cell; and a verifying device to detect a parameter indicating the state of said memory cell and to verify whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 37
Dependent Claim
113 words
Apparatus for programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, comprising: a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source to apply a programming signal to said memory cell; and a verifying device to detect a parameter indicating the state of said memory cell and to verify whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 38
Dependent Claim
18 words
Apparatus according to claim 27, wherein said parameter is a bit line signal parameter of said memory cell.
Claim 39
Dependent Claim
17 words
Apparatus according to claim 27, wherein said parameter is a bit line voltage of said memory cell.
Claim 40
Dependent Claim
94 words
Apparatus for programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, comprising: a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source to apply a programming signal to said memory cell; and a control device to control the application of said programming signal to said memory cell based on the selected reference signal.
Claim 41
Dependent Claim
94 words
Apparatus for programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, comprising: a selecting device which selects one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; a programming signal source to apply a programming signal to said memory cell; and a control device to control the application of said programming signal to said memory cell based on the selected reference signal.
Claim 42
Dependent Claim
67 words
Apparatus according to claim 30, wherein said control device is constructed to detect a parameter indicating the sate of said memory cell, to verify whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal, and to control the application of said programming signal to said memory cell based on a result of the verification.
Claim 43
Dependent Claim
48 words
Apparatus according to claim 30, wherein said control device is constructed to compare a signal corresponding to the state of said memory cell with the selected reference signal, and to control the application of said programming signal to said memory cell based on a result of the comparison.
Claim 44
Independent Claim
92 words
A method of verifying programming of an electrically alterable non-volatile memory cell having more than two predetermined memory states, said method comprising: selecting one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; and comparing a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 45
Independent Claim
92 words
A method of verifying programming of an electrically alterable non-volatile memory cell having more than two predetermined memory states, said method comprising: selecting one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; and comparing a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 46
Dependent Claim
24 words
A method according to claim 33, wherein said comparing includes comparing a bit line signal of said memory cell with the selected reference signal.
Claim 47
Dependent Claim
27 words
A method according to claim 33, wherein said comparing includes comparing a bit line voltage of said memory cell with a voltage of the selected reference signal.
Claim 48
Independent Claim
95 words
A method of verifying programming of an electrically alterable non-volatile memory cell having more than two predetermined memory states, said method comprising: selecting one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; detecting a parameter indicating the state of said memory cell; and verifying whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 49
Independent Claim
95 words
A method of verifying programming of an electrically alterable non-volatile memory cell having more than two predetermined memory states, said method comprising: selecting one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; detecting a parameter indicating the state of said memory cell; and verifying whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 50
Dependent Claim
20 words
A method according to claim 36, wherein said parameter is detected at a bit line terminal of said memory cell.
Claim 51
Dependent Claim
18 words
A method according to claim 36, wherein said parameter is a bit line voltage of said memory cell.
Claim 52
Independent Claim
99 words
A method of programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, said method comprising: selecting one of a plurality of predetermined reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; applying a programming signal to said memory cell; and comparing a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 53
Independent Claim
99 words
A method of programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, said method comprising: selecting one of a plurality of predetermined reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; applying a programming signal to said memory cell; and comparing a signal corresponding to the state of said memory cell with the selected reference signal to verify whether said memory cell is programmed to the state indicated by said information.
Claim 54
Dependent Claim
24 words
A method according to claim 39, wherein said comparing includes comparing a bit line signal of said memory cell with the selected reference signal.
Claim 55
Dependent Claim
27 words
A method according to claim 39, wherein said comparing includes comparing a bit line voltage of said memory cell with a voltage of the selected reference signal.
Claim 56
Independent Claim
101 words
A method of programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, said method comprising: selecting one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; applying a programming signal to said memory cell; detecting a parameter indicating the state of said memory cell; and verifying whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 57
Independent Claim
101 words
A method of programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, said method comprising: selecting one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; applying a programming signal to said memory cell; detecting a parameter indicating the state of said memory cell; and verifying whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal.
Claim 58
Dependent Claim
20 words
A method according to claim 42, wherein said parameter is detected at a bit line terminal of said memory cell.
Claim 59
Dependent Claim
18 words
A method according to claim 42, wherein said parameter is a bit line voltage of said memory cell.
Claim 60
Independent Claim
84 words
A method of programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, said method comprising: selecting one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; applying a programming signal to said memory cell; and controlling the application of said programming signal to said memory cell based on the selected reference signal.
Claim 61
Independent Claim
84 words
A method of programming an electrically alterable non-volatile memory cell having more than two predetermined memory states, said method comprising: selecting one of a plurality of reference signals in accordance with information indicating a memory state to which said memory cell is to be programmed, each reference signal corresponding to a different memory state of said memory cell; applying a programming signal to said memory cell; and controlling the application of said programming signal to said memory cell based on the selected reference signal.
Claim 62
Dependent Claim
58 words
A method according to claim 45, including detecting a parameter indicating the state of said memory cell, verifying whether said memory cell is programmed to the state indicated by said information based on the detected parameter and the selected reference signal, and wherein the application of said programming signal is controlled based on a result of said verifying.
Claim 63
Dependent Claim
40 words
A method according to claim 45, including comparing a signal corresponding to the state of said memory cell with the selected reference signal, and wherein the application of said programming signal is controlled based on a result of said comparing.
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