US4495602A
Expired / Lapsed
US
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Multi-bit read only memory circuit
Assignee: STMicroelectronics lnc USA
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Filing: 1981-12-28
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Granted: 1985-01-22
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Expires: 2001-12-28
Abstract
Abstract A read only memory circuit (10) includes an array of memory transistors including a row of such transistors (12-28) connected to a common word line (30). For each column of memory transistors there is provided a set of reference transistors which receive a word line signal which is concurrent with any word line signal provided to any word line in the memory array. Column decode signals (CD1-CD4) are provided to select a memory transistor on an activated word line and to select corresponding reference transistors. The memory transistor is fabricated to have one of a plurality of threshold voltages. The reference transistors are fabricated to have different predetermined threshold voltages. The drive signals are applied through the word lines concurrently to the selected memory transistor and corresponding reference transistors to cause the transistors to transition from a first state to a second state. Decoding circuitry is provided to determine the time sequence of transition of the memory transistor relative to the reference transistors. This decoding produces an output signal which corresponds to the threshold voltage and therefore the data state for the selected memory transistor.
Inventors
- 👤 Douglas P. Sheppard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:08
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/56; G11C11/5692; G11C16/00; G11C16/02; G11C16/06; G11C16/32; G11C2211/00; G11C2211/56; G11C2211/563; G11C2211/5634
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
133 words
A read only memory circuit, comprising: a memory transistor fabricated to have one of a plurality of threshold voltages each corresponding to a data state, a plurality of reference transistors each having a separate threshold voltage, means for driving said memory transistor and said reference transistors to create transitions from a first state to a second state in a manner to generate a time spacing between said transistions of each of said reference transistors and said memory transistor depending on the relative threshold voltages of said reference transistors and said memory transistor, and means for comparing the time of transition of said memory transistor relative to the times of transition of said reference transistors and for generating output signals representive of said data state of said memory transistor in response to said comparison.
Claim 2
Dependent Claim
133 words
A read only memory circuit, comprising: a memory transistor fabricated to have one of a plurality of threshold voltages each corresponding to a data state, a plurality of reference transistors each having a separate threshold voltage, means for driving said memory transistor and said reference transistors to create transitions from a first state to a second state in a manner to generate a time spacing between said transistions of each of said reference transistors and said memory transistor depending on the relative threshold voltages of said reference transistors and said memory transistor, and means for comparing the time of transition of said memory transistor relative to the times of transition of said reference transistors and for generating output signals representive of said data state of said memory transistor in response to said comparison.
Claim 3
Dependent Claim
149 words
A read only memory circuit comprising: a plurality of memory transistors each fabricated to have one of a plurality of threshold voltages, each threshold voltage corresponding to a data state, a plurality of sets of reference transistors, each reference transistor within said set having a separate threshold voltage, means for driving a selected one of said memory transistors and a corresponding set of said reference transistors to create transitions from a first state to a second state, in a manner to generate a time spacing between said transitions of said reference transistors and said memory transistors, depending on the relative threshold voltages of said reference transistors and said memory transistor, and means for comparing the time of transition of said selected memory transistor relative to said corresponding reference transistors and for generating an output signal representing said data state of said selected memory transistor in response to said comparison.
Claim 4
Dependent Claim
149 words
A read only memory circuit comprising: a plurality of memory transistors each fabricated to have one of a plurality of threshold voltages, each threshold voltage corresponding to a data state, a plurality of sets of reference transistors, each reference transistor within said set having a separate threshold voltage, means for driving a selected one of said memory transistors and a corresponding set of said reference transistors to create transitions from a first state to a second state, in a manner to generate a time spacing between said transitions of said reference transistors and said memory transistors, depending on the relative threshold voltages of said reference transistors and said memory transistor, and means for comparing the time of transition of said selected memory transistor relative to said corresponding reference transistors and for generating an output signal representing said data state of said selected memory transistor in response to said comparison.
Claim 5
Dependent Claim
173 words
A read only memory unit comprising: a plurality of memory transistors arranged in an array of rows and columns, each of said memory transistors fabricated to have one of a plurality of data threshold voltages each corresponding to a data state, a set of reference transistors for each column of said memory transistors, each reference transistor within said set having a separate reference threshold voltage, means for driving a selected one of said memory transistors and the corresponding reference transistors to create transitions from a first state to a second state in a manner to generate a time spacing between said transitions of said reference transistors and said memory transistors depending on the relative threshold voltages of said reference transistors and said memory transistor, and means for comparing the time of transition of said selected memory transistor with respect to the times of transition of said reference transistors corresponding to said selected memory transistor and generating an output signal representing said data state of said selected memory transistor in response to said comparison.
Claim 6
Dependent Claim
173 words
A read only memory unit comprising: a plurality of memory transistors arranged in an array of rows and columns, each of said memory transistors fabricated to have one of a plurality of data threshold voltages each corresponding to a data state, a set of reference transistors for each column of said memory transistors, each reference transistor within said set having a separate reference threshold voltage, means for driving a selected one of said memory transistors and the corresponding reference transistors to create transitions from a first state to a second state in a manner to generate a time spacing between said transitions of said reference transistors and said memory transistors depending on the relative threshold voltages of said reference transistors and said memory transistor, and means for comparing the time of transition of said selected memory transistor with respect to the times of transition of said reference transistors corresponding to said selected memory transistor and generating an output signal representing said data state of said selected memory transistor in response to said comparison.
Claim 7
Dependent Claim
235 words
A read only memory circuit comprising: a plurality of memory transistors arranged in an array of rows and columns, each row of said memory transistors having the control elements thereof connected to a corresponding data word line, each memory transistor fabricated to have one of a plurality of data threshold voltages wherein each data threshold voltage corresponds to a data state, a similar set of reference transistors for each column of said memory transistors, each reference transistor within the set having a separate reference threshold voltage, said reference transistors having the same reference threshold voltages connected in common to corresponding reference world lines, means for applying a concurrent changing amplitude drive signal to a selected one of said data word lines and to said reference word lines for driving a selected one of said memory transistors and the reference transistors for the corresponding column of said selected memory transistor to create transitions from a first state to a second state in a manner to generate a time spacing between said transitions of said reference transistors and said memory transistors depending on the relative threshold voltages of said reference transistors and said memory, and means for comparing the time of transition of said selected memory transistor relative to the times of transition of said correspoding reference transistors and generateing output signals representive of said data state of said selected memory transistor in response to said comparison.
Claim 8
Dependent Claim
235 words
A read only memory circuit comprising: a plurality of memory transistors arranged in an array of rows and columns, each row of said memory transistors having the control elements thereof connected to a corresponding data word line, each memory transistor fabricated to have one of a plurality of data threshold voltages wherein each data threshold voltage corresponds to a data state, a similar set of reference transistors for each column of said memory transistors, each reference transistor within the set having a separate reference threshold voltage, said reference transistors having the same reference threshold voltages connected in common to corresponding reference world lines, means for applying a concurrent changing amplitude drive signal to a selected one of said data word lines and to said reference word lines for driving a selected one of said memory transistors and the reference transistors for the corresponding column of said selected memory transistor to create transitions from a first state to a second state in a manner to generate a time spacing between said transitions of said reference transistors and said memory transistors depending on the relative threshold voltages of said reference transistors and said memory, and means for comparing the time of transition of said selected memory transistor relative to the times of transition of said correspoding reference transistors and generateing output signals representive of said data state of said selected memory transistor in response to said comparison.
Claim 9
Independent Claim
158 words
A method of operation for a read only memory comprising the steps of: applying concurrent time changing drive signals to a selected memory transistor and to a plurality of reference transistors to drive said transistors to create transitions from a first state to a second state in a manner to generate a time spacing between said transistions of said reference transistors and said memory transistors depending on the relative threshold voltages of said reference transistors and said memory transistor wherein the selected memory transistor has one of a plurality of threshold voltages, each corresponding to a data state and each of said reference transistors has a different threshold voltage from that of the other reference transistors, comparing the time of transition of said selected memory transistor with respect to the time of transition of said reference transistors, and generating an output signal representing said data state of said selected memory transistor in response to said step of comparing.
Claim 10
Independent Claim
158 words
A method of operation for a read only memory comprising the steps of: applying concurrent time changing drive signals to a selected memory transistor and to a plurality of reference transistors to drive said transistors to create transitions from a first state to a second state in a manner to generate a time spacing between said transistions of said reference transistors and said memory transistors depending on the relative threshold voltages of said reference transistors and said memory transistor wherein the selected memory transistor has one of a plurality of threshold voltages, each corresponding to a data state and each of said reference transistors has a different threshold voltage from that of the other reference transistors, comparing the time of transition of said selected memory transistor with respect to the time of transition of said reference transistors, and generating an output signal representing said data state of said selected memory transistor in response to said step of comparing.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-22 | 1988-07-23 | 1989-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-22 | 1992-07-23 | 1993-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-22 | 1996-07-23 | 1997-01-22 | $7700.00 | Window Closed / Lapsed |