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US5610413A
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Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor
Assignee: Brown University
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Filing: 1995-06-07
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Granted: 1997-03-11
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Expires: 2015-06-07
Abstract
Abstract Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized. The graded bandgap contact can be a single continuously graded II-VI p-type region or a plurality of cells with each of the cells having first and second thin layers of first and second p-type II-VI semiconductor materials respectively. Another embodiment of the present invention discloses a monolithic multicolor light emitting element capable of emitting four colors and a method for fabricating same. The monolithic multicolor element includes four II-VI semiconductor light emitting devices formed on a single III-V substrate.
Inventors
- 👤 Yongping Fan
- 👤 Jung Han
- 👤 Arto V. Nurmikko
- 👤 Robert L. Gunshor
- 👤 Li He
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:09
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/347; B; B82; B82Y; B82Y20/00; H01S5/04; H01S5/042; H01S5/0421; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; H10H20/813; H10H20/816; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/2913; H10P14/2919; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3236; H10P14/3242; H10P14/3244; H10P14/3254; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3431; H10P14/3432; H10P14/3436; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H10H20/822; H10H20/823; H10H20/83; H10H20/832; H10H29/00; H10H29/10; H10H29/14; H10H29/142
Claims Analysis
Total Claims: 71
Claim 1
Independent Claim
184 words
A semiconductor light emitting device comprising: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material wherein said first conductivity type is n-type and second conductivity type is p-type; said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B.sub.(1-x) C wherein A and B are two different elements from Group II, C is an element from Group VI, and 0<x<1; a contact layer of a p-type fourth II-VI compound semiconductor material; and a graded bandgap p-type II-VI region sandwiched between the second cladding layer and the contact layer.
Claim 2
Dependent Claim
184 words
A semiconductor light emitting device comprising: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material wherein said first conductivity type is n-type and second conductivity type is p-type; said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B.sub.(1-x) C wherein A and B are two different elements from Group II, C is an element from Group VI, and 0<x<1; a contact layer of a p-type fourth II-VI compound semiconductor material; and a graded bandgap p-type II-VI region sandwiched between the second cladding layer and the contact layer.
Claim 3
Dependent Claim
37 words
The semiconductor light emitting device of claim 1, wherein the third II-VI compound semiconductor material has the formula A x B.sub.(1-x) D y E.sub.(1-y) where D and E are two different elements from Group VI, where 0<y<1.
Claim 4
Dependent Claim
23 words
The semiconductor light emitting device of claim 1, further including a substrate of a III-V compound semiconductor material having the first conductivity type.
Claim 5
Dependent Claim
39 words
The semiconductor light emitting device of claim 3, further including a buffer layer of the III-V compound semiconductor material formed on said substrate and having the first conductivity type, said first cladding layer being formed on said buffer layer.
Claim 6
Dependent Claim
20 words
The semiconductor light emitting device of claim 4, wherein said first cladding layer is lattice matched to said buffer layer.
Claim 7
Dependent Claim
21 words
The semiconductor light emitting device of claim 1, wherein said third II-VI compound semiconductor material is Zn xCd 1-x Se (0.80≦x≦0.88).
Claim 8
Dependent Claim
21 words
The semiconductor light emitting device of claim 6, wherein said second II-VI compound semiconductor material is ZnS x Se 1-x (0.07≦x≦0.08).
Claim 9
Dependent Claim
21 words
The semiconductor light emitting device of claim 7, wherein said first II-VI compound semiconductor material is ZnS x Se 1-x (0.07≦x≦0.08).
Claim 10
Dependent Claim
25 words
The semiconductor light emitting device of claim 8, wherein an upper portion of said second cladding layer is heavily doped with the second conductivity type.
Claim 11
Dependent Claim
30 words
The semiconductor light emitting device of claim 9, wherein said III-V compound semiconductor material is GaAs, said first conductivity type is p-type and said second conductivity type is n type.
Claim 12
Dependent Claim
24 words
The semiconductor light emitting device of claim 10, wherein six of said quantum well regions are disposed being said first and second cladding layers.
Claim 13
Dependent Claim
33 words
The semiconductor light emitting device of claim 1, wherein said first and second II-VI compound semiconductor materials is selected from the group consisting of ZnSe, ZnSSe, ZnMnSe, ZnMnSSe, ZnSTe, ZnTe, ZnMnTe and ZnMnSTe.
Claim 14
Dependent Claim
39 words
The semiconductor light emitting device of claim 12, wherein said third II-VI compound semiconductor material is selected from the group consisting of ZnCdSe, ZnMgSe, ZnBaSe, ZnBeSe, ZnCaSe, ZnSrSe, ZnCdSSe, ZnMgSSe, ZnCdTe, ZnMgTe, ZnBaTe, ZnBeTe, ZnCaTe, ZnSrTe, ZnCdSTe and ZnMgSTe.
Claim 15
Dependent Claim
27 words
The semiconductor light emitting device of claim 5, further including means for applying a voltage to said device such that said device is a light emitting diode.
Claim 16
Dependent Claim
44 words
The light emitting device of claim 14 wherein said first conductivity type is p-type and said second conductivity is n-type such that during application of said voltage lateral current spreading is produced at an interface of the buffer layer and the first cladding layer.
Claim 17
Dependent Claim
36 words
The semiconductor light emitting device of claim 1, further including a pair of cleaved facets and means for applying a pulsed or continuous wave current to said device such that said device is a diode laser.
Claim 18
Dependent Claim
25 words
The semiconductor light emitting device of claim 1, further including an insulating layer formed on said second cladding layer, said insulating layer having an opening.
Claim 19
Dependent Claim
32 words
The semiconductor light emitting device of claim 17, further including a contact layer formed on said insulating layer and contacting said heavily doped portion of said second cladding layer through said opening.
Claim 20
Dependent Claim
26 words
The semiconductor light emitting device of claim 18, wherein said contact layer is a material selected from the group consisting of indium-tin oxide, indium and gold.
Claim 21
Dependent Claim
29 words
The semiconductor light emitting device of claim 1, wherein said first and fourth II-VI compound semiconductor materials are ZnSe and ZnTe respectively and said graded bandgap region is p-Zn(Te,Se).
Claim 22
Dependent Claim
74 words
The semiconductor light emitting device of claim 1, wherein said graded bandgap p-type II-VI region comprises a plurality of cells with each of said cells having first and second thin layers of the p-type first and fourth II-VI compound semiconductor materials respectively, said first thin layer of a first cell being in contact with the second cladding layer and said second thin layer of a last cell being in contact with the contact layer.
Claim 23
Dependent Claim
22 words
The semiconductor light emitting device of claim 21, wherein the first and fourth II-VI compound semiconductor materials are Zn(S,Se) and ZnTe respectively.
Claim 24
Dependent Claim
17 words
The semiconductor light emitting device of claim 6, further including manganese disposed throughout said (Zn,Cd)Se quantum well.
Claim 25
Dependent Claim
17 words
The semiconductor light emitting device of claim 6, further including tellurium disposed throughout said (Zn,Cd)Se quantum well.
Claim 26
Dependent Claim
21 words
The semiconductor light emitting device of claim 6, further including an atomic monolayer of ZnTe disposed within said (Zn,Cd)Se quantum well.
Claim 27
Dependent Claim
17 words
The semiconductor light emitting device of claim 25, further including manganese disposed throughout said (Zn,Cd)Se quantum well.
Claim 28
Dependent Claim
103 words
A semiconductor light emitting device comprising: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; said at least one quantum well region comprising a (Zn, Cd) Se quantum well layer sandwiched between first and second Zn(S,Se) barrier layers; a contact layer of a second I-VI compound semiconductor material of said second conductivity type; and a graded bandgap second conductivity type II-VI region sandwiched between the second cladding layer and the contact layer.
Claim 29
Dependent Claim
103 words
A semiconductor light emitting device comprising: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; said at least one quantum well region comprising a (Zn, Cd) Se quantum well layer sandwiched between first and second Zn(S,Se) barrier layers; a contact layer of a second I-VI compound semiconductor material of said second conductivity type; and a graded bandgap second conductivity type II-VI region sandwiched between the second cladding layer and the contact layer.
Claim 30
Dependent Claim
23 words
The semiconductor light emitting device of claim 27, further including a substrate of a III-V compound semiconductor material having a first conductivity type.
Claim 31
Dependent Claim
33 words
The semiconductor light emitting device of claim 28, further including a buffer layer of the III-V compound semiconductor material formed on the substrate, said first cladding layer being disposed on the buffer layer.
Claim 32
Dependent Claim
210 words
A monolithic multicolor light emitting element comprising: first and second semiconductor light emitting devices for emitting light of two different colors respectively formed on a substrate in a spaced relationship, each of said semiconductor light emitting devices including: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B( 1-x ) C wherein A and B are two different elements from Group II and C is at least one element from Group VI; a contact layer of a second conductivity type fourth II-VI compound semiconductor material; and a graded bandgap second conductivity type II-VI region sandwiched between the second cladding layer and the contact layer.
Claim 33
Dependent Claim
210 words
A monolithic multicolor light emitting element comprising: first and second semiconductor light emitting devices for emitting light of two different colors respectively formed on a substrate in a spaced relationship, each of said semiconductor light emitting devices including: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B( 1-x ) C wherein A and B are two different elements from Group II and C is at least one element from Group VI; a contact layer of a second conductivity type fourth II-VI compound semiconductor material; and a graded bandgap second conductivity type II-VI region sandwiched between the second cladding layer and the contact layer.
Claim 34
Dependent Claim
28 words
The monolithic multicolor light emitting element of claim 30, further including a third semiconductor light emitting device for emitting light of a third color formed on said substrate.
Claim 35
Dependent Claim
28 words
The monolithic multicolor light emitting element of claim 31, further including a fourth semiconductor light emitting device for emitting light of a fourth color formed on said substrate.
Claim 36
Dependent Claim
158 words
The monolithic multicolor light emitting element of claim 32 wherein said third and fourth semiconductor light emitting devices comprises: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; and said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI.
Claim 37
Dependent Claim
35 words
The monolithic multicolor light emitting element of claim 33 wherein said substrate comprises a III-V compound semiconductor material having a first conductivity type and a buffer layer of the III-V compound semiconductor material formed thereon.
Claim 38
Dependent Claim
26 words
The monolithic multicolor light emitting element of claim 33 wherein said second II-VI compound semiconductor material Zn(S,Se) and said third II-VI compound semiconductor material is (Zn,Cd)Se.
Claim 39
Dependent Claim
24 words
The monolithic multicolor light emitting element of claim 35, wherein said second light emitting device further includes manganese disposed throughout said (Zn,Cd)Se quantum well.
Claim 40
Dependent Claim
24 words
The monolithic multicolor light emitting element of claim 36, wherein said third light emitting device further includes tellurium disposed throughout said (Zn,Cd)Se quantum well.
Claim 41
Dependent Claim
28 words
The monolithic multicolor light emitting element of claim 36, wherein said third light emitting device further includes an atomic monolayer of ZnTe disposed within said (Zn,Cd)Se quantum well.
Claim 42
Dependent Claim
36 words
The monolithic multicolor light emitting element of claim 38, wherein said fourth light emitting device further includes manganese disposed throughout said (Zn,Cd)Se well layer and an atomic monolayer of ZnTe disposed within said (Zn,Cd)Se well layer.
Claim 43
Dependent Claim
218 words
A flat screen display comprising an M×N array of pixel elements, each of said pixel elements comprising: first and second semiconductor light emitting devices for emitting light of two different colors respectively formed on a substrate in a spaced relationship, each of said semiconductor light emitting devices including: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI; a contact layer of a second conductivity type fourth II-VI compound semiconductor material; and a graded bandgap second conductivity type II-VI region sandwiched between the second cladding layer and the contact layer.
Claim 44
Dependent Claim
218 words
A flat screen display comprising an M×N array of pixel elements, each of said pixel elements comprising: first and second semiconductor light emitting devices for emitting light of two different colors respectively formed on a substrate in a spaced relationship, each of said semiconductor light emitting devices including: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI; a contact layer of a second conductivity type fourth II-VI compound semiconductor material; and a graded bandgap second conductivity type II-VI region sandwiched between the second cladding layer and the contact layer.
Claim 45
Dependent Claim
32 words
The flat screen display of claim 51, wherein each of said pixel elements further includes a third semiconductor light emitting device for emitting light of a third color formed on said substrate.
Claim 46
Dependent Claim
32 words
The flat screen display of claim 41, wherein each of said pixel elements further includes a fourth semiconductor light emitting device for emitting light of a fourth color formed on said substrate.
Claim 47
Dependent Claim
156 words
The flat screen display of claim 53, wherein said third and fourth semiconductor light emitting devices comprises: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; and said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI.
Claim 48
Dependent Claim
200 words
A semiconductor light emitting device comprising: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI and 0≦x≦1; an insulating layer formed on said second cladding layer, said insulating layer having an opening therein to expose a portion of said second cladding layer; and a graded bandgap p-type II-VI region sandwiched between said exposed portion of said second cladding layer and a contacting layer comprising a fourth p-type II-VI compound semiconductor material.
Claim 49
Dependent Claim
200 words
A semiconductor light emitting device comprising: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI and 0≦x≦1; an insulating layer formed on said second cladding layer, said insulating layer having an opening therein to expose a portion of said second cladding layer; and a graded bandgap p-type II-VI region sandwiched between said exposed portion of said second cladding layer and a contacting layer comprising a fourth p-type II-VI compound semiconductor material.
Claim 50
Dependent Claim
20 words
The semiconductor light emitting device of claim 44 further comprising a metal contact formed on top of said contacting layer.
Claim 51
Dependent Claim
37 words
The semiconductor light emitting device of claim 44, wherein the third II-VI compound semiconductor material has the formula A x B.sub.(1-x) D y E.sub.(1-y) where D and E are two different elements from Group VI and 0<y<1.
Claim 52
Dependent Claim
23 words
The semiconductor light emitting device of claim 44, further including a substrate of a III-V compound semiconductor material having the first conductivity type.
Claim 53
Dependent Claim
39 words
The semiconductor light emitting device of claim 47, further including a buffer layer of the III-V compound semiconductor material formed on said substrate and having the first conductivity type, said first cladding layer being formed on said buffer layer.
Claim 54
Dependent Claim
20 words
The semiconductor light emitting device of claim 48, wherein said first cladding layer is lattice matched to said buffer layer.
Claim 55
Dependent Claim
22 words
The semiconductor light emitting device of claim 44, wherein said third II-VI compound semiconductor material is Zn x Cd 1-x Se (0.80≦x≦0.88).
Claim 56
Dependent Claim
21 words
The semiconductor light emitting device of claim 50, wherein said second II-VI compound semiconductor material is ZnS x Se 1-x (0.07≦x≦0.08).
Claim 57
Dependent Claim
21 words
The semiconductor light emitting device of claim 51, wherein said first II-VI compound semiconductor material is ZnS x Se 1-x (0.07≦x≦0.08).
Claim 58
Dependent Claim
25 words
The semiconductor light emitting device of claim 52, wherein an upper portion of said second cladding layer is heavily doped with the second conductivity type.
Claim 59
Dependent Claim
30 words
The semiconductor light emitting device of claim 53, wherein said III-V compound semiconductor material is GaAs, said first conductivity type is p-type and said second conductivity type is n type.
Claim 60
Dependent Claim
24 words
The semiconductor light emitting device of claim 54, wherein six of said quantum well regions are disposed being said first and second cladding layers.
Claim 61
Dependent Claim
33 words
The semiconductor light emitting device of claim 44, wherein said first and second II-VI compound semiconductor materials is selected from the group consisting of ZnSe, ZnSSe, ZnMnSe, ZnMnSSe, ZnSTe, ZnTe, ZnMnTe and ZnMnSTe.
Claim 62
Dependent Claim
39 words
The semiconductor light emitting device of claim 56, wherein said third II-VI compound semiconductor material is selected from the group consisting of ZnCdSe, ZnMgSe, ZnBaSe, ZnBeSe, ZnCaSe, ZnSrSe, ZnCdSSe, ZnMgSSe, ZnCdTe, ZnMgTe, ZnBaTe, ZnBeTe, ZnCaTe, ZnSrTe, ZnCdSTe and ZnMgSTe.
Claim 63
Dependent Claim
27 words
The semiconductor light emitting device of claim 49, further including means for applying a voltage to said device such that said device is a light emitting diode.
Claim 64
Dependent Claim
162 words
A semiconductor light emitting device comprising: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI and 0≦x≦1; and a graded bandgap p-type II-VI region sandwiched between said substrate and said first cladding layer.
Claim 65
Dependent Claim
162 words
A semiconductor light emitting device comprising: at least one quantum well region disposed between first and second cladding layers, said first and second cladding layers having a first and second conductivity type respectively, each of said cladding layers being of a first II-VI compound semiconductor material; said at least one quantum well region comprising a quantum well layer sandwiched between first and second barrier layers, said first and second barrier layers being of a second II-VI compound semiconductor material, said first cladding layer being lattice matched to said first barrier layer and said second cladding layer being lattice matched to said second barrier layer, said quantum well layer being of a third II-VI compound semiconductor material having the formula A x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI and 0≦x≦1; and a graded bandgap p-type II-VI region sandwiched between said substrate and said first cladding layer.
Claim 66
Dependent Claim
21 words
The semiconductor light emitting device of claim 59 further comprising a metal contact formed on top of said second cladding layer.
Claim 67
Dependent Claim
37 words
The semiconductor light emitting device of claim 59, wherein the third II-VI compound semiconductor material has the formula A x B.sub.(1-x) D y E.sub.(1-y) where D and E are two different elements from Group VI and 0<y<1.
Claim 68
Dependent Claim
23 words
The semiconductor light emitting device of claim 59, further including a substrate of a III-V compound semiconductor material having the first conductivity type.
Claim 69
Dependent Claim
39 words
The semiconductor light emitting device of claim 61, further including a buffer layer of the III-V compound semiconductor material formed on said substrate and having the first conductivity type, said first cladding layer being formed on said buffer layer.
Claim 70
Dependent Claim
39 words
The semiconductor light emitting device of claim 61 wherein said first conductivity type is p-type and said second conductivity is n-type, said graded bandgap p-type II-VI region sandwiched between said III-V buffer layer and said first III-V cladding layer.
Claim 71
Dependent Claim
59 words
The semiconductor light emitting device of claim 1, wherein said graded bandgap p-type II-VI region comprises a fifth II-VI compound semiconductor material having a first group VI element from said first II-VI semiconductor material and a second group VI element from said second II-VI semiconductor material, said first group VI element being different from said second group VI element.
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