US5097298A
Expired / Lapsed
US
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Blue light emitting display element
Assignee: Sharp Corp
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Filing: 1990-11-30
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Granted: 1992-03-17
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Expires: 2010-11-30
Abstract
Abstract A blue light emitting display element has a hetero p-n junction type light emitting layer formed between a semiconductor layer of a II-VI or III-V semiconducting compound having a wide energy bandgap and a highly electroconductive amorphous silicon type semiconductor layer which is of opposite conduction type and capable of forming a substantially ohmic contact with the semiconducting compound.
Inventors
- 👤 Shaw Ehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:38
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10D; H10D62/00; H10D62/80; H10D62/82; H10H20/01; H10H20/011; H10H20/012; H10H20/013; H10H20/0137; H10H20/014; H10H20/0145; H10H20/81; H10H20/811; H10H20/817; H10H20/818; H10H20/822; H10H20/823
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
108 words
A blue light emitting diode consisting essentially of: a semiconductor layer of a first conduction type composed of a II-VI or III-V semiconducting compound having a wide energy bandgap; a highly electroconductive amorphous silicon type semiconductor layer of a second conduction type stacked on said semiconductor layer of a first conduction type, said first and second conduction types being different, said semiconducting compound and said amorphous silicon type semiconductor layer being able to form a p-n junction therebetween; a first electrode formed on said amorphous silicon type semiconductor layer of a second conduction type; and a second electrode formed under said semiconductor layer of a first conduction type.
Claim 2
Dependent Claim
108 words
A blue light emitting diode consisting essentially of: a semiconductor layer of a first conduction type composed of a II-VI or III-V semiconducting compound having a wide energy bandgap; a highly electroconductive amorphous silicon type semiconductor layer of a second conduction type stacked on said semiconductor layer of a first conduction type, said first and second conduction types being different, said semiconducting compound and said amorphous silicon type semiconductor layer being able to form a p-n junction therebetween; a first electrode formed on said amorphous silicon type semiconductor layer of a second conduction type; and a second electrode formed under said semiconductor layer of a first conduction type.
Claim 3
Dependent Claim
16 words
The diode of claim 1 wherein said semiconductor layer of a first conduction type comprises ZnO.
Claim 4
Dependent Claim
16 words
The diode of claim 1 wherein said semiconductor layer of a first conduction type comprises ZnS.
Claim 5
Dependent Claim
16 words
The diode of claim 1 wherein said semiconductor layer of a first conduction type comprises ZnSe.
Claim 6
Dependent Claim
16 words
The diode of claim 1 wherein said semiconductor layer of a first conduction type comprises GaN.
Claim 7
Dependent Claim
16 words
The diode of claim 1 wherein said semiconductor layer of a first conduction type comprises AlN.
Claim 8
Dependent Claim
16 words
The diode of claim 1 wherein said semiconductor layer of a first conduction type comprises AlP.
Claim 9
Dependent Claim
31 words
The diode of claim 1 wherein said amorphous silicon type semiconductor layer comprises an aSi:H alloy selected from the group consisting of aSiGe:H, aSi:H, aSiN:H and aSi 1-x C x :H.
Claim 10
Dependent Claim
34 words
The diode of claim 1 wherein said amorphous silicon type semiconductor layer is of p conduction type and is selected from the group consisting of aSiGeB:H, aSi:H(B), aSiN:H(B) and aSi 1-x C x :H(B).
Claim 11
Dependent Claim
20 words
The diode of claim 1 wherein said amorphous silicon type semiconductor layer has conductivity of 10 -3 Ωcm or less.
Claim 12
Dependent Claim
15 words
The diode of claim 1 wherein said first and second electrodes comprise an InGa alloy.
Claim 13
Dependent Claim
34 words
The diode of claim 1 further including soldering layers formed on the surface of said first and second electrodes distal from said semiconductor layers for connecting said first and second electrodes to lead lines.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-17 | 1995-09-16 | 1996-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-17 | 1999-09-16 | 2000-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-17 | 2003-09-16 | 2004-03-17 | $7700.00 | Window Closed / Lapsed |