US5010376A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light emitting heterojunction semiconductor device
Assignee: KDDI Corp
•
Filing: 1990-07-31
•
Granted: 1991-04-23
•
Expires: 2010-07-31
Abstract
Abstract A light emitting semiconductor device which emits blue and/or green light has an active layer and a pair of clad layers which sandwich the active layer (3), deposited on a substrate (1). The substrate (1) is made of GaAs, InP, GaAsP or Ge. Said active layer (3) and said clad layers (2, 4) are made of II-VI group compound semiconductor which is lattice-matched with the substrate at both room temperature and growing temperature, for instance 500° C. Said II-VI group compound semiconductor has the same linear thermal expansion coefficient as that of the substrate. The linear thermal expansion coefficient of the II-IV group compound semiconductor is adjusted by additive of Cd, Mg or Hg.
Inventors
- 👤 Kohsuke Nishimura
- 👤 Kazuo Sakai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:26
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; H01S5/34; H01S5/347; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/811; H10H20/812; H01S5/02; H01S5/0206; H01S5/0211; H01S5/0218; H01S5/3201
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
68 words
A light emitting semiconductor device comprising; a substrate made of one selected from III-V group compound semiconductor, and group IV semiconductor, an active layer (3) sandwiched by clad layers (2,4) deposited on said substrate (1), said active layer and clad layers being made of group II-VI compound semiconductor which lattice matches with the substrate, and has essentially the same linear thermal expansion coefficient as that of the substrate.
Claim 2
Dependent Claim
68 words
A light emitting semiconductor device comprising; a substrate made of one selected from III-V group compound semiconductor, and group IV semiconductor, an active layer (3) sandwiched by clad layers (2,4) deposited on said substrate (1), said active layer and clad layers being made of group II-VI compound semiconductor which lattice matches with the substrate, and has essentially the same linear thermal expansion coefficient as that of the substrate.
Claim 3
Dependent Claim
24 words
A light emitting semiconductor device according to claim 1, wherein said group II-VI compound semiconductor includes an additive selected from Cd, Mg and Hg.
Claim 4
Dependent Claim
27 words
A light emitting semiconductor device according to claim 2, wherein said group II-VI compound semiconductor has the composition Cd 1-x Zn x S 1-y Se y .
Claim 5
Dependent Claim
22 words
A light emitting semiconductor device according to claim 3, wherein the substrate is made of GaAs, and y=1.590x-0.666, and 0.42<x<0.64 are satisfied.
Claim 6
Dependent Claim
22 words
A light emitting semiconductor device according to claim 3, wherein the substrate is made of Ge, and y=1.592x-0.679 and 0.56<x<0.78 are satisfied.
Claim 7
Dependent Claim
22 words
A light emitting semiconductor device according to claim 3, wherein the substrate is made of InP, and y=1.679+0.159, and 0.10<x<0.31 are satisfied.
Claim 8
Dependent Claim
29 words
A light emitting semiconductor device according to claim 1, wherein said group II-VI compound semiconductor has the composition Cd 1-x Zn x S 1-y-z Se y Te z .
Claim 9
Dependent Claim
23 words
A light emitting semiconductor device according to claim 7, wherein the substrate is made of InP, and 0.14<x<1.0, 0.0<y<0.76, and 0.0<z<0.58 are satisfied.
Claim 10
Dependent Claim
23 words
A light emitting semiconductor device according to claim 7, wherein the substrate is made of GaAs, and 0.44<x<1.0, 0.0<y<0.35, and 0.0<z<0.36 are satisfied.
Claim 11
Dependent Claim
23 words
A light emitting semiconductor device according to claim 7, wherein the substrate is made of Ge, and 0.58<x<1.0, 0.17<y<0.29 and 0.0<z<0.62 are satisfied.
Claim 12
Dependent Claim
18 words
A light emitting semiconductor device according to claim 1, wherein said active layer has a super lattice structure.
Claim 13
Dependent Claim
23 words
A light emitting semiconductor device according to claim 1, wherein said group III-V semiconductor substrate is one selected from GaAs, InP and GaAsP.
Claim 14
Dependent Claim
16 words
A light emitting semiconductor device according to claim 1, wherein said group IV substrate is Ge.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-22 | 1994-10-22 | 1995-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-22 | 1998-10-22 | 1999-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-22 | 2002-10-22 | 2003-04-23 | $7700.00 | Window Closed / Lapsed |