US5081632A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor emitting device
Assignee: Opnext Japan Inc
•
Filing: 1990-01-24
•
Granted: 1992-01-14
•
Expires: 2010-01-24
Abstract
Abstract A semiconductor emitting device is provided which is capable of emitting a blue light. The device includes a first clad layer, an active layer and a second clad layer, successively formed on a semiconductor substrate. A nitrogen-doped p-type ZnSSe thin film of low-resistivity having a carrier concentration of not less than 1×10 16 cm -3 and a resistivity of not more than 10 Ω-cm is used as the first clad layer or the second clad layer.
Inventors
- 👤 Masahito Migita
- 👤 Akira Taike
- 👤 Masatoshi Shiiki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:23
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; H01S5/34; H01S5/347; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/811; H10H20/812
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
95 words
A semiconductor emitting device, which comprises: a semiconductor substrate of p-type conductivity; a first clad layer of nitrogen-doped p-type ZnS x Se 1-x , where 0≦x<1, formed on the semiconductor substrate; an active layer, formed on the first clad layer; a second clad layer of n-type conductivity, formed on the active layer; a first elongate coupled to said semiconductor substrate and a second electrode coupled to said second clad layer; and a hetero junction being provided between the active layer and the first clad layer and between the active layer and the second clad layer.
Claim 2
Dependent Claim
95 words
A semiconductor emitting device, which comprises: a semiconductor substrate of p-type conductivity; a first clad layer of nitrogen-doped p-type ZnS x Se 1-x , where 0≦x<1, formed on the semiconductor substrate; an active layer, formed on the first clad layer; a second clad layer of n-type conductivity, formed on the active layer; a first elongate coupled to said semiconductor substrate and a second electrode coupled to said second clad layer; and a hetero junction being provided between the active layer and the first clad layer and between the active layer and the second clad layer.
Claim 3
Dependent Claim
32 words
A semiconductor emitting device according to claim 1, wherein the ZnS x Se 1-x , where 0≦x<1, has a carrier concentration of not less than 1×10 16 cm -1 at room temperature.
Claim 4
Dependent Claim
29 words
A semiconductor emitting device according to claim 1, wherein the ZnS x Se 1-x , where 0≦x<1, has a resistivity of not more than 10 Ω-cm at room temperature.
Claim 5
Dependent Claim
37 words
A semiconductor emitting device according to claim 2, wherein the active layer is comprised of ZnS y Te 1-y , where 0.58≦y≦0.88, and the second clad layer is comprised of ZnS z Se 1-z , where 0≦z≦0.68.
Claim 6
Dependent Claim
42 words
A semiconductor emitting device according to claim 2, wherein the active layer is in a superlattice structure comprised of a lamination of a plurality of layers of ZnS y Te 1-y and ZnS z Se 1-z , where 0.58≦y≦0.88 and 0≦z ≦0.68.
Claim 7
Dependent Claim
48 words
A semiconductor emitting device according to claim 2, wherein the band gap energy each of the ZnS x Se 1-x and a first emiconductor constituting the second clad layer is higher than the band gap of a second semiconductor comprising the active layer by at least 0.2 eV.
Claim 8
Dependent Claim
67 words
A semiconductor emitting device according to claim 2, wherein a lattice mismatch between the lattice constant of the ZnS x Se 1-x comprising the first clad layer and the lattice constant of a second semiconductor comprising the active layer and a lattice mismatch between the lattice constant of the second semiconductor and the lattice constant of a first semiconductor comprising the second clad layer are each within0.3%.
Claim 9
Dependent Claim
97 words
A semiconductor emitting device, which comprises: a semiconductor substrate having an n-type conductivity; a first clad layer having an n-type conductivity, formed on the semiconductor substrate; an active layer formed on the first clad layer; a second clad layer of nitrogen-doped, p-type ZnS x Se 1-x , where 0≦x<1, formed on the active layer; a first electrode coupled to said semiconductor substrate and a second electrode coupled to said second clad layer; and a hetero junction being provided between the first clad layer and the active layer and between the active layer and the second clad layer.
Claim 10
Dependent Claim
97 words
A semiconductor emitting device, which comprises: a semiconductor substrate having an n-type conductivity; a first clad layer having an n-type conductivity, formed on the semiconductor substrate; an active layer formed on the first clad layer; a second clad layer of nitrogen-doped, p-type ZnS x Se 1-x , where 0≦x<1, formed on the active layer; a first electrode coupled to said semiconductor substrate and a second electrode coupled to said second clad layer; and a hetero junction being provided between the first clad layer and the active layer and between the active layer and the second clad layer.
Claim 11
Dependent Claim
83 words
A semiconductor emitting device, which comprises: a nitrogen-doped p-type ZnS x Se 1-x thin film, where 0≦x<1, having a resistivity of not more than 10 Ω-cm at room temperature; a first active semiconductor layer formed on the ZnS x Se 1-x thin film, a junction being provided between the ZnSxSe 1-x thin film and the first active semiconductor layer; and a first electrode coupled to the ZnS x Se 1-x thin film and a second electrode coupled to said first active semiconductor layer.
Claim 12
Dependent Claim
83 words
A semiconductor emitting device, which comprises: a nitrogen-doped p-type ZnS x Se 1-x thin film, where 0≦x<1, having a resistivity of not more than 10 Ω-cm at room temperature; a first active semiconductor layer formed on the ZnS x Se 1-x thin film, a junction being provided between the ZnSxSe 1-x thin film and the first active semiconductor layer; and a first electrode coupled to the ZnS x Se 1-x thin film and a second electrode coupled to said first active semiconductor layer.
Claim 13
Dependent Claim
25 words
A semiconductor emitting device according to claim 9, wherein the first active semiconductor layer is comprised of n-type ZnS y Se 1-y , where 0≦y<1.
Claim 14
Dependent Claim
41 words
A p-type semiconductor thin film represented by the general formula ZnS x Se 1-x , where 0≦x<1, having a carrier concentration of not less than 1×10 16 cm -3 and a conductivity of not more than 10 Ω-cm at room temperature.
Claim 15
Dependent Claim
41 words
A p-type semiconductor thin film represented by the general formula ZnS x Se 1-x , where 0≦x<1, having a carrier concentration of not less than 1×10 16 cm -3 and a conductivity of not more than 10 Ω-cm at room temperature.
Claim 16
Dependent Claim
83 words
A p-type semiconductor thin film according to claim 11, wherein the ZnS x Se 1-x , where 0≦x<1, is formed on a semiconductor substrate by leading a source of group-II element, a source of group-VI element and a source of nitrogen-containing dopant in the form of molecular beams onto the semiconductor substrate in such a source molar ratio of the group-II element to the group-VI element that crystal growth rate is limited by an amount of supply of the source of group-VI element.
Claim 17
Dependent Claim
32 words
A p-type semiconductor thin film according to claim 12, wherein the ZnS x Se 1-x , where 0≦x<1, is formed at a temperature of the semiconductor substrate of 350° to 700° C.
Claim 18
Dependent Claim
35 words
A p-type semiconductor thin film according to claim 12, wherein the ZnS x Se 1-x , where 0≦x-1, is formed by using one of ammonia, diethylamine and triethylamine as the source of the nitrogen-containing dopant.
Claim 19
Dependent Claim
35 words
A p-type semiconductor thin film according to claim 12, wherein the ZnS x Se 1-x ,0≦x-1, is formed in a source molar ratio of the group-II element to the group-VI element of 0.1 to 5.
Claim 20
Dependent Claim
93 words
A semiconductor emitting device, which comprises a semiconductor substrate of p-type conductivity; a first clad layer of p-type ZnS x Se 1-x , 0≦x-1, formed on the semiconductor substrate; an active layer, formed on the first clad layer; and a second clad layer of n-type conductivity, formed on the active layer, a heterojunction being provided between the active layer and the first clad layer and between the active layer and the second clad layer; and a first electrode coupled to said semiconductor substrate and a second electrode coupled to said second clad layer.
Claim 21
Dependent Claim
93 words
A semiconductor emitting device, which comprises a semiconductor substrate of p-type conductivity; a first clad layer of p-type ZnS x Se 1-x , 0≦x-1, formed on the semiconductor substrate; an active layer, formed on the first clad layer; and a second clad layer of n-type conductivity, formed on the active layer, a heterojunction being provided between the active layer and the first clad layer and between the active layer and the second clad layer; and a first electrode coupled to said semiconductor substrate and a second electrode coupled to said second clad layer.
Claim 22
Dependent Claim
26 words
A semiconductor emitting device according to claim 16, wherein the first clad layer of p-type ZnS x Se 1-x contains at least nitrogen as an acceptor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-13 | 1995-07-15 | 1996-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-13 | 1999-07-15 | 2000-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-13 | 2003-07-15 | 2004-01-14 | $7700.00 | Window Closed / Lapsed |