Semiconductor light-emitting device

Claim 2

A semiconductor light-emitting device comprising: a light-emitting region having a first semiconductor layer, formed on a main surface of one side of a semiconductor substrate, an upper-most layer of said light-emitting region made of a compound semiconductor containing elements from the group II and group VI of the periodic table; a second semiconductor layer formed on said light-emitting region, and made of a material having a lattice constant different from that of the material of said semiconductor substrate by at least 2%, said second semiconductor layer having a film thickness not greater than a critical film thickness; a first electrode formed on a main surface of the other side of said semiconductor substrate; and a second electrode formed above said second semiconductor layer; wherein said second semiconductor layer is made of a compound semiconductor containing elements from the group II and group VI of the periodic table, to which a compressive strain is applied.

Claim 3

A semiconductor light-emitting device according to claim 1, wherein said second semiconductor layer is made of a material to which applied is a type of strain selected the group consisting of compressive strain, and tensile strain.

Claim 4

A semiconductor light-emitting device according to claim 1, wherein said second semiconductor layer is made of a compound semiconductor containing elements from the group III and group v of the periodic table, to which a tensile strain is applied.

Claim 5

A semiconductor light-emitting device comprising: a light-emitting region having a first semiconductor layer formed on a main surface of one side of a semiconductor substrate, an upper-most layer of said light-emitting region made of a compound semiconductor containing elements from the group II and group VI of the periodic table; a second semiconductor layer formed on said light-emitting region, and made of a material having a lattice constant different from that of the material of said semiconductor substrate by at least 2%, said second semiconductor layer having a film thickness not greater than a critical film thickness; a first electrode formed on a main surface of the other side of said semiconductor substrate; a third semiconductor layer, which is made of a compound semiconductor containing elements from the group III and group V of the periodic table, formed over said second semiconductor layer; and a second electrode formed over the third semiconductor layer.

Claim 6

A semiconductor light-emitting device comprising: a light-emitting region having a first semiconductor layer formed on a main surface of one side of a semiconductor substrate, an upper-most layer of said light-emitting region made of a compound semiconductor containing elements from the group II and group VI of the periodic table; a second semiconductor layer formed on said light-emitting region, and made of a material having a lattice constant different from that of the material of said semiconductor substrate by at least 2%, said second semiconductor layer having a film thickness not greater than a critical film thickness; a first electrode formed on a main surface of the other side of said semiconductor substrate; a third semiconductor layer, which is made of a compound semiconductor containing elements from the group III and group V of the periodic table, formed over said second semiconductor layer; and a second electrode formed over the third semiconductor layer.

Claim 7

A semiconductor light-emitting device according to claim 4, wherein a fourth semiconductor layer is interposed between said second semiconductor layer and said third semiconductor.

Claim 8

A semiconductor light-emitting device according to claim 5, wherein said fourth semiconductor layer is made of a compound semiconductor containing at least In, Ga, and P.

Claim 9

A semiconductor light-emitting device according to claim 1, wherein a buffer layer is interposed between said semiconductor substrate and said light-emitting region.

Claim 10

A semiconductor light-emitting device according to claim 7, wherein said buffer layer is made of a compound semiconductor containing elements from the group II and group VI of the periodic table.

Claim 11

A semiconductor light-emitting device according to claim 7, wherein said buffer layer is made of a compound semiconductor containing elements from the group III and group V of the periodic table.

Claim 12

A semiconductor light-emitting device comprising: a light-emitting region having a first semiconductor layer, formed on a main surface of one side of a semiconductor substrate, an upper-most layer of said light-emitting region made of a compound semiconductor containing elements from the group II and group VI of the periodic table; a second semiconductor layer formed on said light-emitting region, and made of a material having a lattice constant different from that of the material of said semiconductor substrate by at least 2%, said second semiconductor layer having a film thickness not greater than a critical film thickness; a first electrode formed on a main surface of the other side of said semiconductor substrate; and a second electrode formed over said second semiconductor layer; wherein said light-emitting region has a double-hetero structure including a first optical guide layer formed on said first cladding layer, an active layer formed on said first optical guide layer, a second optical guide layer formed on said active layer, a second cladding layer formed on said second optical guide layer, and a growth protection layer formed on said second cladding layer.

Claim 13

A semiconductor light-emitting device comprising: a light-emitting region having a first semiconductor layer, formed on a main surface of one side of a semiconductor substrate, an upper-most layer of said light-emitting region made of a compound semiconductor containing elements from the group II and group VI of the periodic table; a second semiconductor layer formed on said light-emitting region, and made of a material having a lattice constant different from that of the material of said semiconductor substrate by at least 2%, said second semiconductor layer having a film thickness not greater than a critical film thickness; a first electrode formed on a main surface of the other side of said semiconductor substrate; and a second electrode formed over said second semiconductor layer; wherein said light-emitting region has a double-hetero structure including a first optical guide layer formed on said first cladding layer, an active layer formed on said first optical guide layer, a second optical guide layer formed on said active layer, a second cladding layer formed on said second optical guide layer, and a growth protection layer formed on said second cladding layer.

Claim 14

A semiconductor light-emitting device according to claim 1, wherein said group II element is at least one selected from the group consisting of Zn, Cd and Mg.

Claim 15

A semiconductor light-emitting device according to claim 1, wherein said group vI element is at least one selected from the group consisting of S, Se and Te.

Claim 16

A semiconductor light-emitting device according to claim 4, wherein said group III element is at least one selected from the group consisting of In, Ga and Al.

Claim 17

A semiconductor light-emitting device according to claim 4, wherein said group V element is at least one selected from the group consisting of As and P.

Claim 18

A semiconductor light-emitting device according to claim 14, wherein said second semiconductor layer is made of a material to which is applied a type of strain selected from the group consisting of a compressive strain and a tensile strain.

Claim 19

A semiconductor light-emitting device according to claim 14, wherein said second semiconductor layer is made of a compound semiconductor containing elements from the group II and group VI of the periodic table, to which a compressive strain is applied.