US5138404A
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Semiconductor device for passing current between a GaAs layer and an InGaAlP layer
Assignee: Toshiba Corp
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Filing: 1991-05-31
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Granted: 1992-08-11
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Expires: 2011-05-31
Abstract
Abstract A semiconductor device for passing electric current between a GaAs semiconductor layer (103) and an InGaAlP semiconductor layer (101) both having the same conductivity type. The device includes a higher carrier density region (102) with the carrier density equal to or more than 5×10 17 cm -3 and thickness in a rannge from 400 Å to 800 Å in at least a part of the InGaAlP layer (101) adjoining the GaAs layer (103). As a result, good ohmic contact is achieved and the semiconductor device has a lower operating voltage and a satisfactory thermal characteristic.
Inventors
- 👤 Masayuki Ishikawa
- 👤 Kazuhiko Itaya
- 👤 Genichi Hatakoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:41
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H10D; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/62; H10H20/01; H10H20/011; H10H20/013; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
154 words
A semiconductor light emitting device comprising: (a) a double heterojunction structure having an n-type In 1-w-z Ga z Al w P (0≦w,z≦1) clad layer, an In 1-s-t Ga t Al s P (0≦s,t≦1) active layer and a p-type In 1-u-v Ga v Al u P (0≦u,v≦1) clad layer; (b) a p-type GaAs ohmic contact layer over said p-type In 1-u-v Ga v Al u P (0≦u,v≦1) clad layer; and (c) a high carrier density region formed of p-type In 1-x-y Ga y Al x P layer (0≦x,y≦1) and having a carrier density equal to or more than 5×10 17 cm -3 and a thickness in a range from 400 Å to 800 Å provided between said p-type In 1-u-v Ga v Al u P (0≦u,v≦1) clad layer and said p-type GaAs ohmic contact layer, wherein said high carrier density region has a band gap energy equal to or less than said p-type clad layer.
Claim 2
Dependent Claim
154 words
A semiconductor light emitting device comprising: (a) a double heterojunction structure having an n-type In 1-w-z Ga z Al w P (0≦w,z≦1) clad layer, an In 1-s-t Ga t Al s P (0≦s,t≦1) active layer and a p-type In 1-u-v Ga v Al u P (0≦u,v≦1) clad layer; (b) a p-type GaAs ohmic contact layer over said p-type In 1-u-v Ga v Al u P (0≦u,v≦1) clad layer; and (c) a high carrier density region formed of p-type In 1-x-y Ga y Al x P layer (0≦x,y≦1) and having a carrier density equal to or more than 5×10 17 cm -3 and a thickness in a range from 400 Å to 800 Å provided between said p-type In 1-u-v Ga v Al u P (0≦u,v≦1) clad layer and said p-type GaAs ohmic contact layer, wherein said high carrier density region has a band gap energy equal to or less than said p-type clad layer.
Claim 3
Dependent Claim
34 words
A semiconductor light emitting device according to claim 1, in which said high carrier density region has a carrier density in a range from 5×10 17 cm -3 to 3×10 19 cm -3 .
Claim 4
Dependent Claim
203 words
A semiconductor light emitting device, comprising: (a) a double heterojunction structure having an n-type In 1-w-z Ga z Al w P (0≦w,z≦1) clad layer, an In 1-s-t Ga t Al s P (0≦s,t≦1) active layer, a first p-type In 1-r-s Ga s Al r P (0≦r,s≦1) clad layer, a p-type In 1-p-q Ga q Al p P (0≦p,q≦1) etching stopper layer in contact with said first p-type clad layer and a second p-type In 1-u-v Ga v Al u P (0≦u,v≦1) clad layer in strip form in contact with said p-type etching stopper layer. (b) a p-type GaAs ohmic contact layer over said second p-type In 1-u-v Ga v Al u P (0≦u,v≦1) clad layer; and (c) a high carrier density region formed of a p-type In 1-x-y Ga y Al x P layer (0≦x,y≦1) and having a carrier density equal to or more than 5×10 17 cm -3 and a thickness in a range of 400 Å to 800 Å provided between said second p-type In 1-u-v Ga v Al u P clad layer and said p-type GaAs ohmic contact layer, wherein said high carrier density layer has a band gap energy equal to or less than said second p-type clad layer.
Claim 5
Dependent Claim
203 words
A semiconductor light emitting device, comprising: (a) a double heterojunction structure having an n-type In 1-w-z Ga z Al w P (0≦w,z≦1) clad layer, an In 1-s-t Ga t Al s P (0≦s,t≦1) active layer, a first p-type In 1-r-s Ga s Al r P (0≦r,s≦1) clad layer, a p-type In 1-p-q Ga q Al p P (0≦p,q≦1) etching stopper layer in contact with said first p-type clad layer and a second p-type In 1-u-v Ga v Al u P (0≦u,v≦1) clad layer in strip form in contact with said p-type etching stopper layer. (b) a p-type GaAs ohmic contact layer over said second p-type In 1-u-v Ga v Al u P (0≦u,v≦1) clad layer; and (c) a high carrier density region formed of a p-type In 1-x-y Ga y Al x P layer (0≦x,y≦1) and having a carrier density equal to or more than 5×10 17 cm -3 and a thickness in a range of 400 Å to 800 Å provided between said second p-type In 1-u-v Ga v Al u P clad layer and said p-type GaAs ohmic contact layer, wherein said high carrier density layer has a band gap energy equal to or less than said second p-type clad layer.
Claim 6
Dependent Claim
34 words
A semiconductor light emitting device according to claim 3, in which said high carrier density region has a carrier density in a range from 5×10 17 cm -3 to 3×10 19 cm -3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-11 | 1996-02-10 | 1996-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-11 | 2000-02-10 | 2000-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-11 | 2004-02-10 | 2004-08-11 | $7700.00 | Window Closed / Lapsed |