Electro-optic device having a laterally varying region

Claim 2

A distributed feedback laser comprising a semiconductor body having a pair of opposed end faces, at least one of which is partially transparent at the laser wavelength, said body having an active region positioned between first and second cladding regions of opposite conductivity type, wherein the improvement comprises: a channel defined by a pair of spaced sidewalls, said channel extending in a longitudinal direction between the end faces and periodically varying in width in the lateral direction with each period in the longitudinal direction being about an integral multiple of one half of said wavelength in the semiconductor body, said first cladding region and said active region lying within said channel and abutting said sidewalls whereby said active region periodically varies in said width in said lateral direction in periods which are in said integral multiple; and electrical contact means coupled to said first and second cladding regions.

Claim 3

The laser of claim 1, wherein the channel width is sinusoidally varying.

Claim 4

The laser of claim 1, wherein the channel width is rectangularly varying.

Claim 5

The laser of claim 1, wherein the second cladding region is partially positioned in said channel.

Claim 6

The laser of claim 1, wherein said channel is V-shaped.

Claim 7

A distributed feedback laser, having opposed end faces, at least one of which is partially transparent at the laser wavelength, said laser comprising: a substrate having a major surface; means for blocking current flow overlying said major surface of said substrate; a channel defined by a pair of sidewalls extending between and to the end faces in a longitudinal direction and extending through said means for blocking current flow in a first transverse direction normal to said longitudinal direction, said channel periodically varying in width in a second transverse direction normal to said first and longitudinal directions with each period in the longitudinal direction being about an integral multiple of one half of the wavelength in the semiconductor body; a first cladding region abutting said sidewalls partially filling the channel; an active region within said channel in contact with said sidewalls and overlying the first cladding region; a second cladding region overlying the active region; and means for applying current to said substrate and said second cladding region.

Claim 8

A distributed feedback laser, having opposed end faces, at least one of which is partially transparent at the laser wavelength, said laser comprising: a substrate having a major surface; means for blocking current flow overlying said major surface of said substrate; a channel defined by a pair of sidewalls extending between and to the end faces in a longitudinal direction and extending through said means for blocking current flow in a first transverse direction normal to said longitudinal direction, said channel periodically varying in width in a second transverse direction normal to said first and longitudinal directions with each period in the longitudinal direction being about an integral multiple of one half of the wavelength in the semiconductor body; a first cladding region abutting said sidewalls partially filling the channel; an active region within said channel in contact with said sidewalls and overlying the first cladding region; a second cladding region overlying the active region; and means for applying current to said substrate and said second cladding region.

Claim 9

The laser of claim 6, wherein said channel is a V-shaped groove.

Claim 10

The laser of claim 6, wherein said active region is crescent shaped in end view and of different thicknesses in said first transverse direction.

Claim 11

The laser of claim 6, wherein said means for blocking current flow comprises a first blocking layer of one conductivity type and a second blocking layer of an opposite conductivity type overlying said first blocking layer.

Claim 12

The laser of claim 6, wherein a buffer layer is interposed between said substrate and said means for blocking current flow.

Claim 13

The laser of claim 6, wherein the amplitude of the periodic variation in width is between about 0.05 and 0.1 micrometer.

Claim 14

The laser of claim 6, wherein the width of the channel is between about 2.5 and 3.0 micrometers.

Claim 15

In a semiconductor laser device the combination comprising: a first semiconductor body having a given length and a given conductivity; a second semiconductor body of a length smaller than said given length and a conductivity opposite to the conductivity of the first body; an active layer between said first and second bodies and having a portion extending in a longitudinal direction beyond the second body and overlying the first body to form an external layer portion, said layer having a transverse width normal to said longitudinal direction, said active layer being defined by a pair of opposed longitudinal sidewalls, at least one of the sidewalls of said external portion periodically undulating to form said active external layer with a transverse width that periodically varies in amplitude; and electrical contact means connected to said first and second bodies.

Claim 16

In a semiconductor laser device the combination comprising: a first semiconductor body having a given length and a given conductivity; a second semiconductor body of a length smaller than said given length and a conductivity opposite to the conductivity of the first body; an active layer between said first and second bodies and having a portion extending in a longitudinal direction beyond the second body and overlying the first body to form an external layer portion, said layer having a transverse width normal to said longitudinal direction, said active layer being defined by a pair of opposed longitudinal sidewalls, at least one of the sidewalls of said external portion periodically undulating to form said active external layer with a transverse width that periodically varies in amplitude; and electrical contact means connected to said first and second bodies.