Formation of pattern

Abstract

Abstract PURPOSE:To form taper in a layer to be treated, and to prevent disconnection of a semiconductor device by a method wherein a photo resist pattern is heat treated to form taper at the circumferential edge thereof, and reactive ion etching is performed. CONSTITUTION:The resist mask 12 is provided on PSG11 on an SI substrate 10, and heat treatment is performed to form taper at the side of pattern. The inclining angle of taper can be changed according to the kind of resist and heat treatment, and when various kind of resist having different sensitivity is applied, taper of various angle can be obtained. Mixed gas of CHF3 and O2 is used, the flow rate of O2 gas is selected, the etching ratios of PSG and the resist having equal film thickness are equalized, and when etching is performed, an opening having taper of the same shape with taper of the resist pattern 12 can be formed in PSG11, and the same time the resist mask 12 is incinerated to be removed. When thickness, etching rate of the resist mask and the layer to be treated are varied respectively, various taper shape can be formed, and disconnection at the step part can be prevented.

Inventors

• 👤 Tsukane Hirokawa
• 👤 Yasuo Arima

Bibliographic Details