Patent US2406787A successfully refreshed from Google Patents.
US4022932A
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US
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Resist reflow method for making submicron patterned resist masks
Assignee: International Business Machines Corp
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Filing: 1975-06-09
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Granted: 1977-05-10
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Expires: 1995-06-09
Abstract
Abstract The method for making patterned resist masks having minimum opening dimensions. The mask is prepared initially using standard photo or electron beam lithography techniques to yield the smallest aperture dimensions consistent with the state-of-the-art. Then, the resulting mask is placed within a chamber containing an atmosphere of resist solvent vapor. The vapor is absorbed by the patterned resist mask causing controlled resist reflow which uniformly reduces the dimensions of the resist openings by an amount determined by time, temperature, resist thickness, resist type and solvent used.
Inventors
- 👤 Bai Cwo Feng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:14
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W74/00; H10W74/40; H10W74/47; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/947; Y10S438/948
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
57 words
The method for making patterned resist masks comprising: forming on a substrate surface a patterned resist mask having windows exposing planar surface regions of said substrate, and flowing said resist mask by exposing said resist mask and substrate to a vapor of a solvent of said resist mask to reduce the area of each of said windows.
Claim 2
Independent Claim
57 words
The method for making patterned resist masks comprising: forming on a substrate surface a patterned resist mask having windows exposing planar surface regions of said substrate, and flowing said resist mask by exposing said resist mask and substrate to a vapor of a solvent of said resist mask to reduce the area of each of said windows.
Claim 3
Dependent Claim
17 words
The method as defined in claim 1 wherein said resist mask is made of a photosensitive material.
Claim 4
Dependent Claim
19 words
The method as defined in claim 1 wherein said resist mask is made of an electron beam sensitive material.
Claim 5
Dependent Claim
22 words
The method as defined in claim 1 wherein said resist mask is made of a photosensitive material and said solvent is acetone.
Claim 6
Dependent Claim
21 words
The method as defined in claim 4 wherein said flowing is carried out in a solvent vapor chamber at room temperature.
Claim 7
Dependent Claim
26 words
The method as defined in claim 4 wherein said substrate is formed by providing a semiconductor member and covering said member with an electrical insulating layer.
Claim 8
Dependent Claim
15 words
The method as defined in claim 6 wherein said electrical insulating layer is silicon dioxide.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-09 | 1980-11-08 | 1981-05-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-09 | 1984-11-08 | 1985-05-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-09 | 1988-11-08 | 1989-05-10 | $7700.00 | Window Closed / Lapsed |