Light emitting device

Claim 1

In a light emitting device comprising: a semiconductor substrate having two major surfaces; a first confining layer, overlying a first major surface of the substrate; an active layer overlying the first confining layer; a second confining layer overlying the active layer; a capping layer overlying the second confining layer; an electrical isolation layer overlying the capping layer and having an opening therethrough wherein the capping layer is exposed; an electrically conducting layer overlying the capping layer in the opening in the isolation layer whereby electrical contact is made to the capping layer; and an electrically conducting layer overlying the second major surface of the substrate whereby electrical contact is made to the substrate; wherein the substrate and the first confining layer are of one conductivity type and the second confining layer and the capping layer are of the opposite conductivity type; and wherein the substrate and the first and second confining layers are composed of a material transparent at the wavelength of a light beam emitted by the device; the improvement which comprises: an absorber layer composed of a material which is absorptive of light at the emitted wavelength interposed between the substrate and the first confining layer and of the same conductivity type as the substrate; and wherein the capping layer is absorptive of light at the emitted wavelength.