EP0552023A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Mitsubishi Chemical Corp
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Filing: 1993-01-13
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Granted: —
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Expires: 2013-01-13
Abstract
Abstract A P-type electrode structure is provided for a Group II-VI semiconductor device having a P-type Group II-VI semiconductor layer (101;201;301) consisting of or containing Zn and Se and an ohmic metal electrode (104;204;310). To reduce the resistance of the device between the semiconductor layer (101,201,301) and the electrode (104,204,310) there is at least one intermediate layer (102;202,203;311,312) of a Group II-VI compound containing a Group II element other than Zn, for example Hg.
Inventors
- 👤 Hideki Goto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 08:23
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10D; H10D64/00; H10D64/01; H10D64/011; H10H20/81; H10H20/822; H10H20/823
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
64 words
A P-type electrode structure of a Group II-VI semiconductor device having a P-type Group II-VI semiconductor layer (101;201;301) consisting of or containing Zn and Se and an ohmic metal electrode (104;204;310), characterized in that between said semiconductor layer (101;201;301) and said electrode (104;204;310) there is at least one intermediate layer (102;202,203;311,312) of a Group II-VI compound containing a Group II element other than Zn.
Claim 2
Dependent Claim
36 words
An electrode structure according to claim 1 wherein said intermediate layer is a Group II-VI semiconductor layer (102) consisting of or including Zn and Se having said Group II element other than Zn diffused into it.
Claim 3
Dependent Claim
32 words
An electrode structure according to claim 1 or claim 2 having a layer (308) of said Group II element other than Zn between said P-type semiconductor layer (301) and said electrode (310).
Claim 4
Dependent Claim
28 words
An electrode structure according to claim 2 having a metal layer (103;309) of melting point of more than 2000°C between said intermediate layer (102) and said electrode (310).
Claim 5
Dependent Claim
35 words
An electrode structure according to claim 3 having a metal layer (103;309) of melting point of more than 2000°C between said layer (308) of said Group II element other than Zn and said electrode (310).
Claim 6
Dependent Claim
50 words
An electrode structure according to claim 1 wherein the or each said intermediate layer is a semiconductor layer (202,203;311,312) of a binary Group II-VI compound wherein the Group II element is other than Zn or a ternary Group II-VI compound containing Zn and a Group II compound other than Zn.
Claim 7
Dependent Claim
37 words
An electrode structure according to any one of claims 1 to 6 wherein said intermediate layer (102;202,203;311,312) has a concentration of said Group II element other than Zn which increases in the direction towards said electrode (310).
Claim 8
Dependent Claim
22 words
An electrode structure according to any one of claims 1 to 7 wherein said Group II element other than Zn is Hg.
Claim 9
Dependent Claim
56 words
A P-type electrode structure of a Group II-VI semiconductor device having a P-type Group II-VI semiconductor layer (301) consisting of or containing Zn and Se and an ohmic metal electrode (310), characterized in that between said semiconductor layer (301) and said electrode (310) there is a layer (308) of a Group II element other than Zn.
Claim 10
Dependent Claim
37 words
An electrode structure according to claim 9 wherein there is a metal layer (309) of melting point of more than 2000°C between said layer (308) of a Group II element other than Zn and said electrode (310).
Claim 11
Dependent Claim
20 words
An electrode structure according to claim 9 or claim 10 wherein said Group II element other than Zn is Hg.
Claim 12
Dependent Claim
27 words
A Group II-VI semiconductor device having a P-type Group II-VI semiconductor layer (101;201;301) and an electrode structure therefor according to any one of claims 1 to 11.
Claim 13
Dependent Claim
29 words
A Group II-VI semiconductor light emitting diode having a P-type Group II-VI semiconductor layer (101;201;301) and an electrode structure therefor according to any one of claims 1 to 11.
References Cited (Backward Citations)
US4123295A
Cited
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