US5291507A
Expired / Lapsed
US
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Blue-green laser diode
Assignee: 3M Co
•
Filing: 1992-04-23
•
Granted: 1994-03-01
•
Expires: 2012-04-23
Abstract
Abstract A II-VI compound semiconductor laser diode includes a N-type GaAs substrate, a first cladding layer of N-type ZnSSe overlaying the substrate, a first guiding layer of N-type ZnSe semiconductor overlaying the first cladding layer. A quantum well layer of strained CdZnSe semiconductor overlaying the first guiding layer, a second guiding layer of p-type ZnSe semiconductor overlaying the quantum well layer, and a second cladding layer of p-type ZnSSe semiconductor overlaying the second guiding layer.
Inventors
- 👤 Michael A. Haase
- 👤 Hwa Cheng
- 👤 James M. DePuydt
- 👤 Jun Qiu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:44
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/30; H01S5/34; H01S5/347; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/81; H10H20/822; H10H20/823; H10H20/8232; H01S5/305; H01S5/3054; H01S5/3059; H01S5/3068; H01S5/32; H01S5/327; H01S5/3403; H10H20/816; H10H20/8162
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
94 words
A II-VI compound semiconductor laser diode, including: a single crystal semiconductor substrate of a first conductivity type; a first cladding layer of II-VI semiconductor of a first conductivity type overlaying the substrate; a first guiding layer of II-VI semiconductor of the first conductivity type overlaying the first cladding layer; an active layer of II-VI semiconductor overlaying the first guiding layer; a second guiding layer of II-VI semiconductor of a second conductivity type overlaying the active layer; and a second cladding layer of II-VI semiconductor of the second conductivity type overlaying the second guiding layer.
Claim 2
Dependent Claim
94 words
A II-VI compound semiconductor laser diode, including: a single crystal semiconductor substrate of a first conductivity type; a first cladding layer of II-VI semiconductor of a first conductivity type overlaying the substrate; a first guiding layer of II-VI semiconductor of the first conductivity type overlaying the first cladding layer; an active layer of II-VI semiconductor overlaying the first guiding layer; a second guiding layer of II-VI semiconductor of a second conductivity type overlaying the active layer; and a second cladding layer of II-VI semiconductor of the second conductivity type overlaying the second guiding layer.
Claim 3
Dependent Claim
16 words
The laser diode of claim 1 wherein the active layer includes a quantum well active layer.
Claim 4
Dependent Claim
18 words
The laser diode of claim 2 wherein the quantum well active layer includes a strained pseudomorphic semiconductor layer.
Claim 5
Dependent Claim
19 words
The laser diode of claim 2 wherein the quantum well active layer includes a multiple quantum well active layer.
Claim 6
Dependent Claim
16 words
The laser diode of claim 3 wherein the quantum well active layer includes a CdZnSe layer.
Claim 7
Dependent Claim
26 words
The laser diode of claim 5 wherein: the first and second guiding layers include ZnSSe layers; and the first and second cladding layers include CdZnS layers.
Claim 8
Dependent Claim
13 words
The laser diode of claim 6 wherein the substrate includes a GaAs substrate.
Claim 9
Dependent Claim
26 words
The laser diode of claim 5 wherein: the first and second guiding layers include ZnSe layers; and the first and second cladding layers include ZnSSe layers.
Claim 10
Dependent Claim
31 words
The laser diode of claim 8 wherein: the first and second cladding layers include ZnS x Se 1-x layers where x is about 0.07; and the substrate includes a GaAs substrate.
Claim 11
Dependent Claim
26 words
The laser diode of claim 5 wherein: the first and second guiding layers include ZnSe layers; and the first and second cladding layers include CdZnS layers.
Claim 12
Dependent Claim
32 words
The laser diode of claim 10 wherein: the first and second cladding layers include Cd x Zn 1-x S layers where x is about 0.6; and the substrate includes a GaAs substrate.
Claim 13
Dependent Claim
26 words
The laser diode of claim 2 wherein: the first and second guiding layers include ZnSe layers; and the first and second cladding layers include ZnSSe layers.
Claim 14
Dependent Claim
31 words
The laser diode of claim 12 wherein: the first and second cladding layers include ZnS x Se 1-x layers where x is about 0.07; and the substrate includes a GaAs substrate.
Claim 15
Dependent Claim
26 words
The laser diode of claim 2 wherein: the first and second guiding layers include ZnSe layers; and the first and second cladding layers include CdZnS layers.
Claim 16
Dependent Claim
32 words
The laser diode of claim 14 wherein: the first and second cladding layers include Cd x Zn 1-x S layers where x is about 0.6; and the substrate includes a GaAs substrate.
Claim 17
Dependent Claim
32 words
The laser diode of claim 2 wherein: the substrate includes a ZnSe substrate; the first and second cladding layers include CdZnS layers; and the first and second guiding layers include ZnSe layers.
Claim 18
Dependent Claim
26 words
The laser diode of claim 2 wherein: the first and second guiding layers include ZnSSe layers; and the first and second cladding layers include CdZnS layers.
Claim 19
Dependent Claim
13 words
The laser diode of claim 17 wherein the substrate includes a GaAs substrate.
Claim 20
Dependent Claim
96 words
A laser diode, including: a single crystal semiconductor substrate of a first conductivity type; a first ZnSSe cladding layer of a first conductivity type overlaying the substrate; a first ZnSe guiding layer of the first conductivity type overlaying the first cladding layer; a pseudomorphic CdZnSe quantum well active layer overlaying the first guiding layer; a second ZnSe guiding layer of a second conductivity type overlaying the active layer; a second ZnSSe cladding layer of the second conductivity type overlaying the second guiding layer; and first and second electrodes for making electrical contact to the laser diode.
Claim 21
Dependent Claim
96 words
A laser diode, including: a single crystal semiconductor substrate of a first conductivity type; a first ZnSSe cladding layer of a first conductivity type overlaying the substrate; a first ZnSe guiding layer of the first conductivity type overlaying the first cladding layer; a pseudomorphic CdZnSe quantum well active layer overlaying the first guiding layer; a second ZnSe guiding layer of a second conductivity type overlaying the active layer; a second ZnSSe cladding layer of the second conductivity type overlaying the second guiding layer; and first and second electrodes for making electrical contact to the laser diode.
Claim 22
Dependent Claim
31 words
The laser diode of claim 19 wherein: the first and second cladding layers include ZnS x Se 1-x layers where x is about 0.07; and the substrate includes a GaAs substrate.
Claim 23
Dependent Claim
112 words
A II-VI compound semiconductor laser diode formed from overlaying layers of material, including: a first guiding layer of II-VI semiconductor of a first conductivity type; a second guiding layer of II-VI semiconductor of a second conductivity type adjacent the first guiding layer, the first and second guiding layers forming a pn junction; a quantum well active layer of II-VI semiconductor between the first and second guiding layers; a single crystal semiconductor substrate of a first conductivity type opposite the first guiding layer from the second guiding layer; a first electrode opposite the substrate from the first guiding layer; and a second electrode opposite the second guiding layer from the first guiding layer.
Claim 24
Dependent Claim
112 words
A II-VI compound semiconductor laser diode formed from overlaying layers of material, including: a first guiding layer of II-VI semiconductor of a first conductivity type; a second guiding layer of II-VI semiconductor of a second conductivity type adjacent the first guiding layer, the first and second guiding layers forming a pn junction; a quantum well active layer of II-VI semiconductor between the first and second guiding layers; a single crystal semiconductor substrate of a first conductivity type opposite the first guiding layer from the second guiding layer; a first electrode opposite the substrate from the first guiding layer; and a second electrode opposite the second guiding layer from the first guiding layer.
Claim 25
Dependent Claim
18 words
The laser diode of claim 21 wherein the quantum well active layer includes a strained pseudomorphic semiconductor layer.
Claim 26
Dependent Claim
16 words
The laser diode of claim 22 wherein the quantum well active layer includes a CdZnSe layer.
Claim 27
Dependent Claim
16 words
The laser diode of claim 23 wherein the first and second guiding layers include ZnSe layers.
Claim 28
Dependent Claim
13 words
The laser diode of claim 24 wherein the substrate includes a GaAs substrate.
Claim 29
Dependent Claim
13 words
The laser diode of claim 24 wherein the substrate includes a ZnSe substrate.
Claim 30
Dependent Claim
19 words
The laser diode of claim 21 wherein the quantum well active layer includes a multiple quantum well active layer.
Claim 31
Dependent Claim
51 words
The laser diode of claim 21 and further including: a first cladding layer of II-VI semiconductor of a first conductivity type between the substrate and the first guiding layer; and a second cladding layer of II-VI semiconductor of a second conductivity type between the second guiding layer and the second electrode.
Claim 32
Dependent Claim
31 words
The laser diode of claim 28 wherein: the first and second cladding layers include ZnS x Se 1-x layers where x is about 0.07; and the substrate includes a GaAs substrate.
Claim 33
Dependent Claim
32 words
The laser diode of claim 28 wherein: the first and second cladding layers include Cd x Zn 1-x S layers where x is about 0.6; and the substrate includes a GaAs substrate.
Claim 34
Dependent Claim
23 words
The laser diode of claim 28 wherein: the first and second cladding layers include CdZnS layers; and the substrate includes a ZnSe substrate.
Claim 35
Dependent Claim
96 words
A laser diode, including: a single crystal semiconductor substrate of a first conductivity type; a first CdZnS cladding layer of a first conductivity type overlaying the substrate; a first ZnSe guiding layer of the first conductivity type overlaying the first cladding layer; a pseudomorphic CdZnSe quantum well active layer overlaying the first guiding layer; a second ZnSe guiding layer of a second conductivity type overlaying the active layer; a second CdZnS cladding layer of the second conductivity type overlaying the second guiding layer; and first and second electrodes for making electrical contact to the laser diode.
Claim 36
Dependent Claim
96 words
A laser diode, including: a single crystal semiconductor substrate of a first conductivity type; a first CdZnS cladding layer of a first conductivity type overlaying the substrate; a first ZnSe guiding layer of the first conductivity type overlaying the first cladding layer; a pseudomorphic CdZnSe quantum well active layer overlaying the first guiding layer; a second ZnSe guiding layer of a second conductivity type overlaying the active layer; a second CdZnS cladding layer of the second conductivity type overlaying the second guiding layer; and first and second electrodes for making electrical contact to the laser diode.
Claim 37
Dependent Claim
13 words
The laser diode of claim 32 wherein the substrate includes a ZnSe substrate.
Claim 38
Dependent Claim
32 words
The laser diode of claim 32 wherein: the first and second cladding layers include Cd x Zn 1-x S layers where x is about 0.6; and the substrate includes a GaAs substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-28 | 1997-08-30 | 1998-03-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-28 | 2001-08-30 | 2002-03-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-28 | 2005-08-30 | 2006-03-01 | $7700.00 | Window Closed / Lapsed |