US4607369A
Expired / Lapsed
US
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Semiconductor laser having a burying layer of a II-VI compound
Assignee: Sanyo Electric Co Ltd
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Filing: 1983-03-30
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Granted: 1986-08-19
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Expires: 2003-03-30
Abstract
Abstract A semiconductor laser includes an oscillation layer comprising a first clad layer, an active layer and a second clad layer which are comprised of gallium aluminum arsenide and deposited, in this order, on a semiconductor substrate. A buried cap layer in a stripe geometry for narrowing a width of a current path is deposited on a second clad layer. A burying layer comprised of II-VI compound such as zinc selenide, zinc sulfide and the like is formed on the second clad layer other than the portion on which the cap layer is formed, so that the cap layer is buried. The buried layer is formed utilizing a low temperature deposition such as a molecular beam epitaxy.
Inventors
- 👤 Tatsuhiko Niina
- 👤 Keiichi Yodoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:00
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/80; H10H20/81; H10H20/822; H01S5/2054; H01S5/2059; H01S5/2205; H01S5/2211; H01S5/2232; H01S5/2234; H01S5/30; H01S5/32; H01S5/323; H01S5/32308
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
154 words
A semiconductor laser comprising: a semiconductor substrate having a first surface, first electrode means coupled to said semiconductor substrate for supplying electric current thereto, an oscillation layer for generating a laser beam including an active layer in which stimulated emission occurs and including first and second layers between which said active layer is interposed, light and carriers being substantially confined in said active layer, said first layer being disposed over said substrate, said active layer being disposed over said first layer and said second layer being disposed over said active layer, a buried cap layer having a stripe geometry for providing a narrow current path width, said cap layer being disposed over said second layer, a burying layer comprised of a II-VI compound, said burying layer being disposed over said second layer such that said cap layer is buried, and second electrode means coupled to said buried cap layer for coupling electric current thereto.
Claim 2
Dependent Claim
154 words
A semiconductor laser comprising: a semiconductor substrate having a first surface, first electrode means coupled to said semiconductor substrate for supplying electric current thereto, an oscillation layer for generating a laser beam including an active layer in which stimulated emission occurs and including first and second layers between which said active layer is interposed, light and carriers being substantially confined in said active layer, said first layer being disposed over said substrate, said active layer being disposed over said first layer and said second layer being disposed over said active layer, a buried cap layer having a stripe geometry for providing a narrow current path width, said cap layer being disposed over said second layer, a burying layer comprised of a II-VI compound, said burying layer being disposed over said second layer such that said cap layer is buried, and second electrode means coupled to said buried cap layer for coupling electric current thereto.
Claim 3
Dependent Claim
26 words
The semiconductor laser in accordance with claim 1, wherein said second layer comprises material having approximately the same lattice constant as that of said burying layer.
Claim 4
Dependent Claim
16 words
The semiconductor laser in accordance with claim 2, wherein said material comprises gallium aluminum arsenide (GaAlAs).
Claim 5
Dependent Claim
39 words
The semiconductor laser in accordance with claim 1, wherein said burying cap layer and said buried layer include upper surfaces and said upper surface of said cap layer and said upper surface of said burying layer are substantially coplanar.
Claim 6
Dependent Claim
39 words
The semiconductor laser in accordance with claim 1, wherein said first layer, said active layer and said second layer included in said oscillation layer comprise gallium aluminum arsenide and said burying layer and buried cap layer include upper surfaces.
Claim 7
Dependent Claim
16 words
The semiconductor laser in accordance with claim 5, wherein said II-VI compound comprises zinc selenide (ZnSe).
Claim 8
Dependent Claim
22 words
The semiconductor laser in accordance with claim 6, wherein said burying layer comprised of zinc selenide is formed using molecular beam epitaxy.
Claim 9
Dependent Claim
25 words
The semiconductor laser in accordance with claim 6, wherein said burying layer comprised of zinc selenide is formed using a metal-organic chemical vapor deposition (MOCVD).
Claim 10
Dependent Claim
24 words
The semiconductor laser in accordance with claim 5, wherein said II-VI compound is selected from the group consisting of zinc sulfide and zinc telluride.
Claim 11
Dependent Claim
18 words
The semiconductor laser in accordance with claim 9, wherein said burying layer is formed using molecular beam epitaxy.
Claim 12
Dependent Claim
20 words
The semiconductor laser in accordance with claim 9, wherein said burying layer is formed using metal-organic chemical vapor deposition (MOCVD).
Claim 13
Dependent Claim
45 words
The semiconductor laser in accordance with claim 5, wherein said upper surface of said buried cap layer and said upper surface of said burying layer are substantially coplanar and each of said cap layer and said burying layer is 0.3 to 1 μm in thickness.
Claim 14
Dependent Claim
22 words
The semiconductor laser in accordance with claim 5, wherein said laser beam generated from said oscillation layer is a visible laser beam.
Claim 15
Dependent Claim
29 words
The semiconductor laser in accordance with claim 5, wherein the gallium aluminum arsenide in said second means is such that the fraction of aluminum arsenide (AlAs) is over 0.3.
Claim 16
Dependent Claim
19 words
The semiconductor laser in accordance with claim 1, wherein said semiconductor substrate is of a channel substrate planar type.
Claim 17
Dependent Claim
19 words
A semiconductor laser in accordance with claim 5, wherein said semiconductor substrate is of a channel substrate planar type.
Claim 18
Dependent Claim
15 words
A semiconductor laser in accordance with claim 16, wherein said II-VI compound comprises zinc selenide.
Claim 19
Dependent Claim
23 words
A semiconductor laser in accordance with claim 17, wherein said burying layer comprised of zinc selenide is formed using a molecular beam epitaxy.
Claim 20
Dependent Claim
24 words
The semiconductor laser in accordance with claim 17, wherein said burying layer comprised of zinc selenide is formed using metal-organic chemical vapor deposition (MOCVD).
Claim 21
Dependent Claim
24 words
The semiconductor laser in accordance with claim 16, wherein said II-VI compound is selected from the group consisting of zinc sulfied and zinc telluride.
Claim 22
Dependent Claim
18 words
The semiconductor laser in accordance with claim 20, wherein said burying layer is formed using molecular beam epitaxy.
Claim 23
Dependent Claim
20 words
The semiconductor laser in accordance with claim 20 wherein said burying layer is formed using metal-organic chemical vapor deposition (MOCVD).
Claim 24
Dependent Claim
45 words
The semiconductor laser in accordance with claim 16, wherein the upper surface of said buried cap layer and said upper surface of said burying layer are substantially coplanar and each of said cap layer and said burying layer is 0.3 to 1 μm in thickness.
Claim 25
Dependent Claim
22 words
The semiconductor laser in accordance with claim 16, wherein the laser beam generated from said oscillation layer is a visible laser beam.
Claim 26
Dependent Claim
30 words
The semiconductor laser in accordance with claim 16, wherein the gallium aluminum arsenide in said second means is such that the fraction of aluminum arsenide (AlAs) is greater than 0.3.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-08-18 | 1990-02-17 | 1990-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-08-18 | 1994-02-17 | 1994-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-08-18 | 1998-02-17 | 1998-08-19 | $7700.00 | Window Closed / Lapsed |