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US4481631A Expired / Lapsed US ⏱️ 0.0 years remaining

Loss stabilized buried heterostructure laser

Assignee: Nokia Bell Labs
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Filing: 1981-06-12
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Granted: 1984-11-06
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Expires: 2001-06-12
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Abstract

Abstract A buried heterostructure laser which obtains lowest mode operation by larger differences in loss between the lowest and higher order modes is described. The loss is achieved by interface scattering between the mesa and the burying layer. The scattering losses increase with refractive index discontinuity, interface roughness and decreasing mesa width. Stabilization results because scattering losses increase rapidly with the order of the transverse modes.

Inventors

  • 👤 Charles H. Henry
  • 👤 Ralph A. Logan

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 14:14
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 104 words
In a laser, a light emitting structure comprising an active layer, first and second semiconductor layers on opposing sides of said active layer, said active, first and second layers forming a mesa, said active layer having a width between approximately 2.0 μm and approximately 4.0 μm, a third semiconductor layer contacting opposite side faces of said active and first and second semiconductor layers, said active layer having a bandgap less than the bandgaps of said first and second semiconductor layers, and said third semiconductor layer having an index of refraction less than the effective index of the mesa by at least approximately 4 percent.
Claim 2
Dependent Claim 104 words
In a laser, a light emitting structure comprising an active layer, first and second semiconductor layers on opposing sides of said active layer, said active, first and second layers forming a mesa, said active layer having a width between approximately 2.0 μm and approximately 4.0 μm, a third semiconductor layer contacting opposite side faces of said active and first and second semiconductor layers, said active layer having a bandgap less than the bandgaps of said first and second semiconductor layers, and said third semiconductor layer having an index of refraction less than the effective index of the mesa by at least approximately 4 percent.
Claim 3
Dependent Claim 33 words
A structure as recited in claim 1 further comprising first and second guiding layers intermediate said active layer and said first semiconductor layer and said active layer and said second semiconductor layer, respectively.
Claim 4
Dependent Claim 21 words
A structure recited in claim 1 in which said layers comprise semiconductors selected from the group consisting of Group III-V elements.
Claim 5
Dependent Claim 36 words
A structure as recited in claim 3 in which said semiconductor comprises Al x Ga 1-x As, x of said third layer being greater than x eff of said mesa by at least approximately 20 percent.
Claim 6
Dependent Claim 23 words
A structure as recited in claim 4 in which said active layer has a width of between approximately 2.0 μm and 3.0 μm.
Claim 7
Dependent Claim 18 words
A structure as recited in claim 5 in which said x for said third layer is approximately 0.65.
Claim 8
Dependent Claim 18 words
A structure as recited in claim 6 in which said x for said first layer is approximately 0.30.
Claim 9
Dependent Claim 41 words
A laser superstructure comprising a first input emitting structure as recited in claim 1 and a second light emitting structure as recited in claim 1, said first and said second structures being disposed on a substrate and isolated from each other.
Claim 10
Dependent Claim 25 words
A superstructure as recited in claim 8 in which said first structure and said second structure are spaced from each other by approximately 15 μm.
Claim 11
Dependent Claim 13 words
A structure as recited in claim 3 in which said semiconductors comprise InGaAsP.

References Cited (Backward Citations)

US4121177A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-11-06 1988-05-07 1988-11-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-11-06 1992-05-07 1992-11-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-11-06 1996-05-07 1996-11-06 $7700.00 Window Closed / Lapsed

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